Untitled
Abstract: No abstract text available
Text: BYX82 / 83 / 84 / 85 / 86 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications Rectification, general purpose
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BYX82
OD-57
MIL-STD-750,
BYX83
BYX84
BYX85
BYX86
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Untitled
Abstract: No abstract text available
Text: BYX82 / 83 / 84 / 85 / 86 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current High surge current loading Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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PDF
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BYX82
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYX83
BYX84
BYX85
BYX86
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Untitled
Abstract: No abstract text available
Text: BYX82, BYX83, BYX84, BYX85, BYX86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in
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PDF
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BYX82,
BYX83,
BYX84,
BYX85,
BYX86
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYX82
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Untitled
Abstract: No abstract text available
Text: BYX82, BYX83, BYX84, BYX85, BYX86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in
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Original
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PDF
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BYX82,
BYX83,
BYX84,
BYX85,
BYX86
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYX82
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Untitled
Abstract: No abstract text available
Text: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:
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Original
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PDF
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BYX82,
BYX83,
BYX84,
BYX85,
BYX86
OD-57
MIL-STD-750,
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:
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Original
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PDF
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BYX82,
BYX83,
BYX84,
BYX85,
BYX86
OD-57
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
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BYX82
Abstract: BYX83 BYX84 BYX85 BYX86
Text: BYX82 / 83 / 84 / 85 / 86 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current High surge current loading Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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Original
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PDF
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BYX82
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYX82
OD-57
BYX83
08-Apr-05
BYX83
BYX84
BYX85
BYX86
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BYX82
Abstract: BYX83 BYX84 BYX85 BYX86
Text: BYX82 / 83 / 84 / 85 / 86 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current High surge current loading Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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Original
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PDF
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BYX82
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYX82
OD-57
BYX83
18-Jul-08
BYX83
BYX84
BYX85
BYX86
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diode byx 65 400
Abstract: No abstract text available
Text: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization:
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Original
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PDF
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BYX82,
BYX83,
BYX84,
BYX85,
BYX86
OD-57
MIL-STD-750,
BYX86
BYX86TR
diode byx 65 400
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diode byx 65 400
Abstract: BYX84
Text: BYX82, BYX83, BYX84, BYX85, BYX86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in
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Original
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PDF
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BYX82,
BYX83,
BYX84,
BYX85,
BYX86
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYX82
diode byx 65 400
BYX84
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BYX63-800
Abstract: GR812 1N3890 1N3891 1N3900 1N3903 1N3909 BYX62-600 BYX62-800 BYX63-600
Text: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes BYX BYX BYX BYX BYX BYX 66 - 500, R 66 - 600, (R) 66 - 700, (R) 66 - 800, (R) 66 - 900, (R) 6 6 -1 0 0 0 , (R) 12 A / tcase = 100°C * IN 3889, (R) * 1N 3890, (R) * 1N 3891, (R) * 1N 3892, (R)
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25AyiUs
1N3890,
1N3891,
BYX63-800
GR812
1N3890
1N3891
1N3900
1N3903
1N3909
BYX62-600
BYX62-800
BYX63-600
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BYX58-200
Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Text: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A
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100mA
BYX58-200
byx 21
BYX 13 400 R
Diodes de redressement
MR05
PY 55
byx58
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diode byx
Abstract: BYX67-1000 DIODE REDRESSEMENT BYX 13 400 R byx 21 diode byx 67-1000 diode byx 32 BYX/400 BYX67 400 BYX67-600
Text: STCd S G S—THOMSON O | 7 cî 2 c] c! 3 ? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY R EC T IFIE R DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 6 0 0 -+ 1 0 0 0 V
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1/4-28UNF
CB-34)
diode byx
BYX67-1000
DIODE REDRESSEMENT
BYX 13 400 R
byx 21
diode byx 67-1000
diode byx 32
BYX/400
BYX67 400
BYX67-600
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BYT 1000
Abstract: diodes byt diodes byt 400 byx 12 800 D015 BA158 do218 byx 200
Text: u 'LB Q A G rlB B RECTIFIER DIODES Fast-recovery-diodes Type • V rrm V (A) ■fsm (A) If a v (V) If (A) (us) Case JEDEC VF at trr BA 157 BA 158 BA 159 400 600 1000 1.0 35 <1.3 1.0 <0.3 D015 BY 396 BY 397 BY 398 BY 399 RGP 30M 100 200 400 800 1000 3.0 60
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DO-201
O-220
DO-218
BYT 1000
diodes byt
diodes byt 400
byx 12 800
D015
BA158
do218
byx 200
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BYX 71 800
Abstract: diode byx alimentation decoupage THOMSON byx 21 BYX 71 600 diodes redressement thomson diode byx 66-1000
Text: STC D | S G S-¡-THOMSON O 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) T H O M S O N -C S F 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH
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case100OC)
CB-425)
CB-262)
CB-262
QDD23t
CB-19)
CB-428)
CB-244
BYX 71 800
diode byx
alimentation decoupage THOMSON
byx 21
BYX 71 600
diodes redressement thomson
diode byx 66-1000
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byx 61 400
Abstract: byx 33 400 BYX61-50 Thomson-CSF rectifier GR606 diodes byt
Text: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types 6 A / Tcase = 85°C ESM ESM ESM ESM ESM 255-50 R 255-100 R 255-200 R 255-300 R 255-400 R 10 20 40 60 80 zzzzz 765-10 765-20 765-40 765-60 765-80 R (R) (R) (R) (R) 1N 3889, (R)
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CB-150
CB-33)
byx 61 400
byx 33 400
BYX61-50
Thomson-CSF rectifier
GR606
diodes byt
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Untitled
Abstract: No abstract text available
Text: rZ 7 SGS-THOMSON *7# [^Q œi[LI©TO Q [^a(gi 1N 3899 -> 1N 3903 BYX 63-600 FAST RECOVERY RECTIFIER DIODES • FAST RECOVERY TIME ■ LOW FORWARD RECOVERY TIME ■ AVAILABLE UP TO 600V APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY
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00bS233
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3899
Abstract: 63600 63600 byx
Text: rrr s g s -th o m s o n in 3899- i n 3903 A 7# BYX 63-600 FAST RECOVERY RECTIFIER DIODES . FAST RECOVERY TIME • LOW FORWARD RECOVERY TIME ■ AVAILABLE UP TO 600V A PPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCHMODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS
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3903/BYX
-15A/hs
3899
63600
63600 byx
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IC 3899
Abstract: 3899 15A 400 - 600V FAST DIODES
Text: r z 7 S C S -T H O M S O N ^ 7 # M » o m ^ O T s * S 1N 3 8 9 9 -1 N 3903 BYX 63-600 FAST RECOVERY RECTIFIER DIODES • FAST RECOVERY TIME ■ LOW FORWARD RECOVERY TIME ■ AVAILABLE UP TO 600V A P P LIC A TIO N S ■ DC AND AC MOTOR CONTROL ■ SW ITCHM ODE POWER SUPPLY
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250cm
310cm.
IC 3899
3899
15A 400 - 600V FAST DIODES
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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BYX 71 800
Abstract: BYX 71 600 VENUS 7110-0
Text: Sb E D • 7^2=1237 0041^35 5Q4 ■ S G T H S G S- TH OM SON SCS-THOMSON T '0 J 'f 7 ’ B Y T 71-100 A iL ^ H M O Û S 800 A FAST RECOVERY RECTIFIER DIODES ■ HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES EN ABLE THE DETERMINATION OF trr AND Irm
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80100IA/jÂ
100IA
BYX 71 800
BYX 71 600
VENUS
7110-0
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