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    BYW27 Price and Stock

    Diotec Semiconductor AG BYW27-400

    DIODE GEN PURP 400V 1A DO204AC
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    DigiKey BYW27-400 Ammo Pack 5,000 5,000
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    BYW27-400 Cut Tape 1
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    Mouser Electronics BYW27-400
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    Verical BYW27-400 4,035 1,850
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    Diotec Semiconductor AG BYW27-50

    DIODE GEN PURP 50V 1A DO204AC
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    DigiKey BYW27-50 Bulk 5,000
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    Verical BYW27-50 4,450 1,950
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    TME BYW27-50 4,452 5
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    Diotec Semiconductor AG BYW27-100

    DIODE GEN PURP 100V 1A DO204AC
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    DigiKey BYW27-100 Bulk 5,000
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    Mouser Electronics BYW27-100
    • 1 $0.41
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    Verical BYW27-100 3,880 1,995
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    TME BYW27-100 3,880 5
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    Diotec Semiconductor AG BYW27-800

    DIODE GEN PURP 800V 1A DO204AC
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    DigiKey BYW27-800 Bulk 5,000
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    Mouser Electronics BYW27-800
    • 1 $0.41
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    Onlinecomponents.com BYW27-800
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    Diotec Semiconductor AG BYW27-600

    DIODE GEN PURP 600V 1A DO204AC
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    DigiKey BYW27-600 Bulk 5,000
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    Mouser Electronics BYW27-600
    • 1 $0.41
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    Verical BYW27-600 3,940 1,895
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    TME BYW27-600 3,940 5
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    Find more BYW27 price and stock on Findchips.com

    BYW27 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BYW27 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYW27-100 Diotec Silicon Rectifiers Original PDF
    BYW27-100 EIC Semiconductor Silicon Rectifiers Original PDF
    BYW27100 Fagor 1 Amp.Glass Passivated Junction Rectifier Original PDF
    BYW27-100 Fagor 100 V, 1 A glass passivated junction rectifier Original PDF
    BYW27-100 Semikron Silicon Rectifier Original PDF
    BYW27-100 Semikron Standard silicon rectifier diodes Original PDF
    BYW27-100 Dionix General Purpose Silicon Rectifier (Short form datasheet) Scan PDF
    BYW27-100 General Semiconductor Standard Silicon Rectifier Scan PDF
    BYW27-100 Microsemi Diode: 2A: 100V: High Efficiency Rectifier Scan PDF
    BYW27-100 Terry Semiconductor General Purpose Silicon Rectifier Scan PDF
    BYW27-100 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BYW27-1000 Diotec Silicon Rectifiers Original PDF
    BYW27-1000 EIC Semiconductor Silicon Rectifier Diode Original PDF
    BYW27-1000 EIC Semiconductor 1000 V, 1.0 A silicon rectifier Original PDF
    BYW271000 Fagor 1 Amp.Glass Passivated Junction Rectifier Original PDF
    BYW27-1000 Fagor 1000 V, 1 A glass passivated junction rectifier Original PDF
    BYW27-1000 Semikron Standard silicon rectifier diodes Original PDF
    BYW27-1000 Dionix General Purpose Silicon Rectifier (Short form datasheet) Scan PDF
    BYW27-1000 General Semiconductor Standard Silicon Rectifier Scan PDF

    BYW27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYW27-100GP

    Abstract: BYW27-800GP DO-204AL JESD22-B102 J-STD-002 BYW27-200GP
    Text: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


    Original     		PDF BYW27-100GP BYW27-800GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 BYW27-800GP DO-204AL JESD22-B102 J-STD-002 BYW27-200GP

    BYW27-100GP

    Abstract: BYW27-200GP
    Text: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat * Glass-plastic encapsulation technique is covered by


    Original     		PDF BYW27-100GP BYW27-800GP MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 BYW27-200GP

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BYW27-50 - BYW27-1000 SILICON RECTIFIERS


    Original     		PDF BYW27-50 BYW27-1000 DO-41 UL94V-O MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: BYW27-50 . BYW27-1000 BYW27-50 . BYW27-1000 Si-Rectifiers – Si-Gleichrichter Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07 Dimensions - Maße [mm] 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		PDF BYW27-50 BYW27-1000 DO-41 DO-204AL UL94V-0 BYW27-50 BYW27-100 BYW27-200

    BYW27

    Abstract: BYW27-1000 BYW27-50
    Text: BYW27-50 . BYW27-1000 1 Amp. Glass Passivated Junction Rectifier Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.0 A. at 70 °C. 6.35 ± 0.2 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm.


    Original     		PDF BYW27-50 BYW27-1000 DO-15 BYW27 BYW27 BYW27-1000 BYW27-50

    BYW27-1000

    Abstract: BYW27-50 BYW 200
    Text: BYW27-50 - BYW27-1000 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Amperes DO - 41 FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.107 (2.7)


    Original     		PDF BYW27-50 BYW27-1000 DO-41 UL94V-O MIL-STD-202, BYW27-1000 BYW 200

    BYW27-1000

    Abstract: BYW27-50
    Text: BYW27-50 - BYW27-1000 SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Amperes DO - 41 FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)


    Original     		PDF BYW27-50 BYW27-1000 DO-41 UL94V-O MIL-STD-202,

    BYW27-100

    Abstract: BYW27-1000 BYW27-200 BYW27-400 BYW27-50 BYW27-600 DO-204AL
    Text: BYW27-50 . BYW27-1000 BYW27-50 . BYW27-1000 Si-Rectifiers – Si-Gleichrichter Version 2005-08-26 Nominal current Nennstrom -0.1 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V Plastic case


    Original     		PDF BYW27-50 BYW27-1000 DO-41 DO-204AL UL94V-0 BYW27-100 BYW27-1000 BYW27-200 BYW27-400 BYW27-50 BYW27-600 DO-204AL

    Untitled

    Abstract: No abstract text available
    Text: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current


    Original     		PDF BYW27-100GP BYW27-800GP MIL-S-19500 22-B106 DO-204AL DO-41) AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: BYW27-50 - BYW27-1000 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Amperes DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4


    Original     		PDF BYW27-50 BYW27-1000 DO-41 UL94V-O MIL-STD-202,

    SB550 1n5402

    Abstract: BY2000 P1000J p1000M p1000s BY1800 1N4002 1N4003 SB840 1N4005
    Text: 3A 5A 5/8 A 12 A 7.5±0.1 ±0.5 62.5 7,5±0.1 62.5±0.5 Type 7.5 ±0.1 Type ±0.5 6.3±0.1 Type 62.5±0.5 5.1-0.1 Type +0.5 62.5 -2.5 3.9 62.5 Voltage [V] Diodes / Rectifiers Standard Recovery 2A 5/6 A 10.15 A 15/20 A 25 A 30 A Current 1N4001 BYW27-50 1N5391


    Original     		PDF BYW27-50 1N5391 1N5400K 1N5400 BY550-50 P600A P1000A PX1500A 1N4002 BYW27-100 SB550 1n5402 BY2000 P1000J p1000M p1000s BY1800 1N4002 1N4003 SB840 1N4005

    Untitled

    Abstract: No abstract text available
    Text: BYW27-50 . BYW27-1000 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A to 70º C Voltage 50 to 1000V DO-204AC DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction


    Original     		PDF BYW27-50 BYW27-1000 DO-204AC DO-15) 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002

    BYW27

    Abstract: No abstract text available
    Text: BYW27-50 . BYW27-1000 1 Amp. Glass Passivated Junction Rectifier DO-15 Plastic Voltage 50 to 1000 V Current 1.0 A at 70 °C ø3.05±0.1 ø0.8±0.05 Dimensions in mm. R 6.35±0.2 58.5±0.5 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,


    Original     		PDF BYW27-50 BYW27-1000 DO-15 BYW27 BYW27

    BYW27-200

    Abstract: BYW27-400 BYW27-50 BYW27-600 DO-204AL BYW27-100 BYW27-1000 BYW27
    Text: BYW27-50 . BYW27-1000 BYW27-50 . BYW27-1000 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07 Dimensions - Maße [mm] 1A Repetitive peak reverse voltage


    Original     		PDF BYW27-50 BYW27-1000 DO-41 DO-204AL UL94V-0 BYW27-200 BYW27-400 BYW27-50 BYW27-600 DO-204AL BYW27-100 BYW27-1000 BYW27

    Untitled

    Abstract: No abstract text available
    Text: BYW27-50 . BYW27-1000 Silicon Rectifiers Silizium Gleichrichter Version 2004-10-01 Nominal current Nennstrom -0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6


    Original     		PDF BYW27-50 BYW27-1000 DO-41 DO-204AL UL94V-0 BYW27-100 BYW27-200 BYW27-400

    Untitled

    Abstract: No abstract text available
    Text: BYW27-50 . BYW27-1000 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A to 70º C Voltage 50 to 1000V DO-204AC DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction


    Original     		PDF BYW27-50 BYW27-1000 DO-204AC DO-15) 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002

    BYW27-100GP

    Abstract: BYW27-200GP
    Text: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


    Original     		PDF BYW27-100GP BYW27-800GP MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 BYW27-200GP

    Untitled

    Abstract: No abstract text available
    Text: FAGOR 3MSR32S QDDD71S DQ1 • F G R S S7E » BYW27-50 FAGOR ELECTRONICS BYW27-1.000 'T, -o\-l3 1 Amp. Silicon! Dimensions in mm. DO-15 F-126 58 A 2 Plastic Voltage 50 to 1.000 V. Current 1.0 A. at 70 °C. • Low cost Mounting instructions 1. Min. distance from body to soldering point,


    OCR Scan     		PDF 3MSR32S QDDD71S BYW27-50 BYW27-1 DO-15 F-126 BYW27

    BYW27

    Abstract: No abstract text available
    Text: BYW27-50GP THRU BYW27-1000GP GLASS PASSIVATED JUNCTION PLASTIC MINIATURE RECTIFIER Voltage - 50 to 1000 Volts Current -1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Lab^ oratory Flammability Ciassification 94V-0


    OCR Scan     		PDF BYW27-50GP BYW27-1000GP DO-41 MIL-S-19500 99ent BYW27

    btw27

    Abstract: smd WTs 35 btw 27 REA 471 BYW 22 bridge rectifier
    Text: GENL INSTR/ POWER ESE D • 3fl^ai37 Q O Q 3 b ñ b 3 ■ T -01-13 BYW27-50GP THRU BYW27-1000GP GLASS PASSIVATED JUNCTION PLASTIC MINIATURE RECTIFIER 50 to 1000 Volts - 1.0 Voltage Current Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers '


    OCR Scan     		PDF BYW27-50GP BYW27-1000GP DO-41 MIL-S-19500 btw27 smd WTs 35 btw 27 REA 471 BYW 22 bridge rectifier

    Untitled

    Abstract: No abstract text available
    Text: FA G O R^ BYW27-50 BYW27-1.000 1 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.000 V Current 1.0 A. at 70 °C. ¿35«! S8.5 min 1Glass passivated junction Mounting instructions 1High current capability 1. Min. distance from b o d y to so ld erin g point,


    OCR Scan     		PDF DO-15 BYW27-50 BYW27-1 BYW27

    diode BY127 specifications

    Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
    Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/


    OCR Scan     		PDF 00G3315 D041/D015 D0204/VP GP10A GP10B GP10D BYW27-50 BYW27-100 BYW27-200 BY135GP diode BY127 specifications GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245

    BYW21

    Abstract: 58A2 BYW27 BYW27-50
    Text: 3MSR32S GÜDD71S DGT « F G R S S7E » BYW27-50 FAGOR FAGOR ELECTRONICS BYW27-1.000 'T, -o\-l3 1 Amp. Silicon ! Dimensions in mm. DO-15 F-126 58 A 2 Plastic Voltage 50 to 1.000 V. Current 1.0 A. at 70 °C. • Low cost Mounting instructions • Diffused junction


    OCR Scan     		PDF 3MSR32S DD71S BYW27-50. BYW27-1 DO-15 F-126 BYW27 BYW21 58A2 BYW27-50

    diode BY127

    Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
    Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/


    OCR Scan     		PDF 00D3315 D041/D015 D0204/ GP10A BYW27-50 1N4Q017 M100A GP10B 8YW27-1O0 1N4002 diode BY127 BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE