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    BYV SCHOTTKY Search Results

    BYV SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    BYV SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BYV 10-60  SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    Untitled

    Abstract: No abstract text available
    Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    Untitled

    Abstract: No abstract text available
    Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    Untitled

    Abstract: No abstract text available
    Text: BYV 10- 40  SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    byv 65

    Abstract: No abstract text available
    Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    byv 20

    Abstract: byv 65
    Text: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    byv 20

    Abstract: No abstract text available
    Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


    Original
    PDF

    byv 65

    Abstract: No abstract text available
    Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    PDF

    BYV 200

    Abstract: byv 20
    Text: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    ByV schottky

    Abstract: No abstract text available
    Text: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    byv 20

    Abstract: No abstract text available
    Text: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    SCHOTTKY bys 92-50

    Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
    Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6


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    diode 698

    Abstract: DIODE REDRESSEMENT diodes redressement thomson Diodes de redressement
    Text: BYV 10-20 —►B YV 10-4 THOMSON SEMICONDUCTORS SCHOTTKY RECTIFIER .DIODES, DIODES DE REDRESSEMENT'! SCHOTTKY . *»? : -. 'o - 1 A*/Tamb - 80°C Metal to atficon rectifier diodes in glees case featuring very low forward voltage drop and fast recovery time, intented for low voltage switching


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    Untitled

    Abstract: No abstract text available
    Text: C T SGS-THOMSON ^ 7 # . HD»HLI TO s M(gi BYV 10-20 ->40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­


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    Untitled

    Abstract: No abstract text available
    Text: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­


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    SCHOTTKY DIODES CROSS REFERENCE

    Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
    Text: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C


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    BAR11 LL101 BAT47/48 BAT19 BAT29 10/BAT19 10/BAT SCHOTTKY DIODES CROSS REFERENCE SD 102 M BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent bat 301 l BAR10 PDF

    SOD106A

    Abstract: 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr V 20 30 40 90 100 SOD81 1.0 A SOD87 1.0 A surface-mount SOD106A SOT223 1.0 A 1.0 A


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    1N5817 BYV10-20 1N5818 1N5819 PRLL5817 PRLL5818 PRLL5819 OD106A OT223 BYG90-20 SOD106A 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81 PDF

    BAS18

    Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
    Text: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)


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    0-20A BAS18 BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29 PDF

    TMM BAT 48

    Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
    Text: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)


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    ps/20 0-20A TMM BAT 48 melf Schottky Byv 10-40 tm BYV 30 45 BAT 49 PDF

    ym 238

    Abstract: No abstract text available
    Text: SGS-THOMSON « ^ f i& IC T lR M Q O S B Y V 1 0 -2 0 -^ 4 0 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featur­ ing very low foward voltage drop and fast recovery time, intended for low voltage switching mode power


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    ByV schottky

    Abstract: DIODE 2FL 2fl marking diode sgs-thomson diodes byv 65
    Text: Æ T SGS-THOMSON ^ 7 #« HD ê iILI®T®(S R!lûÊi B Y V 1 0 -2 0 -> 4 0 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode


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    7T2T237 ByV schottky DIODE 2FL 2fl marking diode sgs-thomson diodes byv 65 PDF

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SGS-TUOMSON L iO T « ! ^ 7# 5 B Y V 10 -20 A SMALL SIGNAL SCHOTTKY DIODE D E S C R IP T IO N Metal to silicon rectifier diode in glass case featur­ ing very low toward voltage drop and fast recovery time, intended for low voltage switch ing mode power


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