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    BYV 35 Price and Stock

    Vishay Intertechnologies BYV26DGP-E3/73

    Rectifiers 800 Volt 1.0A 75ns Glass Passivated
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYV26DGP-E3/73 40,126
    • 1 $0.4
    • 10 $0.343
    • 100 $0.239
    • 1000 $0.225
    • 10000 $0.225
    		Buy Now

    Vishay Intertechnologies SBYV28-200-E3/73

    Rectifiers 200 Volt 3.5A 20ns 90 Amp IFSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SBYV28-200-E3/73 45,422
    • 1 $0.53
    • 10 $0.451
    • 100 $0.314
    • 1000 $0.203
    • 10000 $0.16
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    Vishay Intertechnologies BYV26EGP-E3/73

    Rectifiers 1000 Volt 1.0A 75ns Glass Passivated
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYV26EGP-E3/73 9,346
    • 1 $0.53
    • 10 $0.439
    • 100 $0.313
    • 1000 $0.225
    • 10000 $0.225
    		Buy Now

    Vishay Intertechnologies BYV26EGP-E3/54

    Rectifiers 1000 Volt 1.0A 75ns Glass Passivated
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BYV26EGP-E3/54 17,764
    • 1 $0.57
    • 10 $0.495
    • 100 $0.343
    • 1000 $0.244
    • 10000 $0.216
    		Buy Now

    Vishay Intertechnologies SBYV26C-E3/54

    Rectifiers 600 Volt 1.0A 30ns 30 Amp IFSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SBYV26C-E3/54 11,813
    • 1 $0.35
    • 10 $0.298
    • 100 $0.208
    • 1000 $0.161
    • 10000 $0.161
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    Find more BYV 35 price and stock on Findchips.com

    BYV 35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode BYV 95

    Abstract: byv 16 BYV 08
    Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in


    Original     		PDF BYV12, 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV12 BYV13 BYV14 BYV15 BYV16 Diode BYV 95 byv 16 BYV 08

    BYV 200

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV 200

    BYV32

    Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-100 JESD22-B102D J-STD-002B

    BYV32

    Abstract: BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020C O-263AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 O-263AB 08-Apr-05 JESD22-B102D J-STD-002B

    BYVB32-200-E3

    Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYVB32-200-E3 JESD22-B102D J-STD-002B Diode BYV 95

    BYV32-200E

    Abstract: Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC BYV32-200E Diode BYV 95

    BYV32

    Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35

    Untitled

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC

    BYV32-150

    Abstract: byv 20 BYV32100
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020C, ITO-220AB 2002/95/EC BYV32-150 byv 20 BYV32100

    BYV32-200E

    Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-200E JESD22-B102 J-STD-002 byv325

    BYV 200

    Abstract: BYV 35 C BYV 35 BYV 30 45 byv 26c BYV26A BYV26G BYV 26E byv 45
    Text: SIYU R BYV26A . BYV26G Ultra-Fast Recovery Rectifier Reverse Voltage 200 to 1400 V Forward Current 1.0 to 1.05 A DO-15 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed:


    Original     		PDF BYV26A BYV26G DO-15 BYV 200 BYV 35 C BYV 35 BYV 30 45 byv 26c BYV26A BYV26G BYV 26E byv 45

    TR-R25

    Abstract: BYV32 BYV 35 C
    Text: BYV32 Series Dual Ultra Fast Rectifiers TO-220AB PRV : 50 - 200 Volts Io : 18 Ampere 0.154 3.91 DIA. 0.148(3.74) 0.055(1.39) 0.045(1.14) 0.113(2.87) 0.103(2.62) FEATURES : * * * * * * 0.415(10.54)MAX. Glass passivated chip junction High current capability


    Original     		PDF BYV32 O-220AB O-220AB TR-R25 BYV 35 C

    byv ultra Fast Recovery Rectifier

    Abstract: BYV 30 45 BYV 200 BYV27
    Text: BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features D Controlled avalanche characteristic D Low forward voltage D Ultra fast recovery time D Glass passivated junction D Hermetically sealed package Applications 94 9539 Very fast rectifier e.g. for switch mode


    Original     		PDF BYV27/. D-74025 byv ultra Fast Recovery Rectifier BYV 30 45 BYV 200 BYV27

    TRANSISTOR 58050

    Abstract: 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20
    Text: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION


    Original     		PDF L4985 L4985D TRANSISTOR 58050 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20

    st 9548

    Abstract: No abstract text available
    Text: BYV 28/— Vishay Telefunken ▼ Ultra Fast Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristic • Low forw ard voltage • Ultra fa st recovery tim e • G lass passivated junction • H erm etically sealed package \ Applications Very fa st rectifier e.g. fo r sw itch m ode p ow er supply


    OCR Scan     		PDF BYV28/50 BYV28/200 D-74025 24-Jun-98 st 9548

    BYV 200

    Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
    Text: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns


    OCR Scan     		PDF BYW77P- 77P-100 77P-150 77P-200 77PI-150 77PI-200 BYW99P- 99P-100 99P-1508-100, BYV 200 diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C

    BYV 200

    Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
    Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220


    OCR Scan     		PDF BYW77P- 77P-100 77P-150 77P-200 77PI-150 77PI-200 BYW99P- 99P-100 99P-150ng BYX61-100 BYV 200 BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 BYX65-400 BYV 35 C

    BAT 127

    Abstract: A502GE A503GE byv 20 BYV 35 CB-127
    Text: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10


    OCR Scan     		PDF /10mA /20mA CB-247 CB-18 BAT 127 A502GE A503GE byv 20 BYV 35 CB-127

    BYY 56

    Abstract: BYV 200 BYV 30 45 BYW 200 DDD1355 BYV 100 5BFL
    Text: EUPEC Epitaxial rectifier diodes Type Vrrm I favm tA = 25°C V A blE » • 34032T7 D0CU352 5bfl « U P E C Ifsm VF Ir 10 ms, tvj max ¡f = Ifavm tvj = 25°C VR = VrrM tvj — tvj max A V trr tvj max mA ns °c Outline BYR 29-800 800 8 60 < 1,75 < 0 ,2 <75


    OCR Scan     		PDF 34032T7 DDD1355 57/58-E BYY 56 BYV 200 BYV 30 45 BYW 200 BYV 100 5BFL

    BYY 56

    Abstract: BYV 35 byv 65 BYV 200
    Text: ~V-03-0\ Epitaxial rectifier diodes Type V rrm Ifavm V 10 A 800 • 3M03217 DPDD151 i s t VF I fs m = 2 5 °C tA BYR 29-800 11E D eupec ms, ¡f Ir = I favm = 25 °C Outline = V rrm = t Vj max VR t v, A V mA ns < 1 ,7 5 < 0 ,2 < 60 UPEC Ivj max trr tv| max


    OCR Scan     		PDF 03-Oj BYY 56 BYV 35 byv 65 BYV 200

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    TMM BAT 48

    Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
    Text: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)


    OCR Scan     		PDF ps/20 0-20A TMM BAT 48 melf Schottky Byv 10-40 tm BYV 30 45 BAT 49

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    BY407A

    Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
    Text: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C


    OCR Scan     		PDF CB-210) CB-26) BYV88- BY407A BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210