transistor D 4515
Abstract: ceramic axial capacitors D 4515 VISHAY CONNECTORS vishay AXIAL ELECTROLYTIC capacitors
Text: Construction and Lead Configuration Vishay Multilayer Ceramic Dipped Axial Capacitors 50, 100, 200 and 500 Vdc e3 INTERNAL CONSTRUCTION Multilayer ceramic capacitors consist of electrodes, the interleaved ceramic dielectric and the external terminal connectors. The capacitance is given by the description:
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17-Jan-06
transistor D 4515
ceramic axial capacitors
D 4515
VISHAY CONNECTORS
vishay AXIAL ELECTROLYTIC capacitors
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transistor MRF321
Abstract: JMC 1200
Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321/D
MRF321
MRF321
MRF321/D*
MRF321/D
transistor MRF321
JMC 1200
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MMBD6050LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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MMBD6050LT1/D
MMBD6050LT1
236AB)
MMBD6050LT1
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J023
Abstract: jmc 5201
Text: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts
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MRF323/D
MRF323
MRF323
MRF323/D*
MRF323/D
J023
jmc 5201
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BAV74LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV74LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500
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BAV74LT1/D
BAV74LT1
236AB)
BAV74LT1
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MRF321
Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321/D
MRF321
MRF321/D*
MRF321
3 w RF POWER TRANSISTOR NPN
erie redcap capacitors
1N4001
VK200
transistor MRF321
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jmc 5201
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323/D
MRF323
MRF323
MRF323/D*
MRF323/D
jmc 5201
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MRF323
Abstract: erie redcap capacitors VK200
Text: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200– 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323/D
MRF323
MRF323/D*
MRF323
erie redcap capacitors
VK200
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IXTN550N055T2
Abstract: No abstract text available
Text: Advance Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXTN550N055T2
OT-227
E153432
550N055T2
IXTN550N055T2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 455A Ω 1.65mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXFN520N075T2
OT-227
E153432
520N075T2
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908B
Abstract: dbs9905
Text: DBS 908 DBS 908LM 2 GS/s VXI Waveform Digitizer Mezzanine Module For the Analogic DBS 9905 “C” Size VXI Carrier Module Introduction The high-performance DBS 908 Waveform Digitizer is a modular mezzanine board designed for use with the DBS 9905 “C” size VXI carrier module. It features a maximum sampling rate of 2 GigaSamples/second, 8-bit resolution and
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908LM
908LMB
908B
dbs9905
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CY27S03A
Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability
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CY7C122
CY27S03A
15JC10
CY7C190
cy7c9101
cy7c122 die
VIC068A user guide
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F360N15T2 VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol
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MMIX1F360N15T2
150ns
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX1F360N15T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol
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MMIX1F360N15T2
150ns
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information MMIX1F420N10T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = Trr ≤ RDS on ≤ (Electrically Isolated Tab) 100V 334A Ω 2.6mΩ 140ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F420N10T
140ns
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET MMIX1F420N10T VDSS ID25 = = Trr ≤ RDS on ≤ (Electrically Isolated Tab) 100V 334A Ω 2.6mΩ 140ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F420N10T
140ns
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TRF marking sot23
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 o \4 CATHODE o 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Unit Vr 75 Vdc if 200 mAdc ¡FMfsurge 500 mAdc Symbol
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BAS16LT1/D
BAS16LT1
TRF marking sot23
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marking MN sot-23
Abstract: SOT-23 MARKING mn
Text: MOTOROLA Order this document by MM B06050LT1 ID SEMICONDUCTOR TECHNICAL DATA Switching Diode CATHODE % ANODE 1 MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc *FM surge 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C
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B06050LT1
OT-23
O-236AB)
MMBD6050LT1/D
marking MN sot-23
SOT-23 MARKING mn
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD914LT1/D SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode 3 O 14 CATHODE o 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 100 Vdc if 200 mAdc iFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW /°C R0JA 556
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MMBD914LT1/D
OT-23
O-236AB)
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fw sot-23
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA S w itc h in g D io d e MMBD6050LT1 3 o CATHODE H— o1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc lFM surge 500 mAdc Symbol
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MMBD6050LT1/D
MMBD6050LT1
OT-23
O-236AB)
fw sot-23
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Untitled
Abstract: No abstract text available
Text: PWR-DRV1 Universal Power Driver 400 V - 300 mA/500 mA POWER INTEGRATIONS, INC. Product Highlights Can operate from rectified AC or DC power source • • 200, 300, and 400 V versions Drives up to 50 W loads from rectified 120 VAC input Can be controlled by mechanical switches, digital
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A/500
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAS16LT1 3 0 CATHODE ^ 0 1 ANODE M o to r o la P re fe rre d D e v ic e MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 Vdc if 200 m Adc 'FM fsurge 500 mAdc Symbol Max
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BAS16LT1/D
BAS16LT1
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TSD45N50V
Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000
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STP30N05
BUZ11A
STP25N05
BUZ10
STLT29
BUZ71
IRFZ20
BUZ71A
STP17N
STLT19
TSD45N50V
TSD40N55V
TSD33N50V
TSD23N50V
TSD30N60V
TSD180N10V
TSD160N05V
TSD14N100V
TSD4M450V
TSD22N80V
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NPD8301
Abstract: J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935
Text: 1 This JFET Transistors NATL Material National áuá Semiconductor N-Channel JFETs Typ« No. Case Style VGS1-2 D rift G„ Gfs C|ss C ru BV R G ou CMRfl Vg» Vp Igss loss Gis GosCI-2 Iq H G 2 Process Pkg. Goss Idss •g Vos O iV /T PA) jim hos Oimho) (dB)
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tSD113D
2N5515
2N5516
2N5517
2N5518
9N5519
2N5520
2N5521
2N5522
2N5523
NPD8301
J406 dual
NPD8303
J406
2N3934
2N5561
2N3954-6
2N5045
2N5454
2N3935
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