fp50n05
Abstract: 50n05
Text: j h a r f r RFP50N05 RFG50N05 is May 1992 N -C hannel Enhancem ent-M ode Power Field-Effect Transistors (MegaFETs Features Package TO-220AB TOP VIEW • 50A, 50V • r DS(on) = 0 .0 2 2 fi DRAIN (FLANGE) • UIS SOA Rating Curve (Single Pulse) u • SOA is P o w e r-D issip atio n Lim ited
|
OCR Scan
|
PDF
|
RFP50N05
RFG50N05
O-220AB
O-247
RFG50N05
92CS-43040
BVD88
fp50n05
50n05
|
max4440
Abstract: No abstract text available
Text: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
OCR Scan
|
PDF
|
APT10086BVFR
O-247
APT10086BVR
100V16
max4440
|
SSF6N70A
Abstract: No abstract text available
Text: SSF6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 Q < Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (Max.) @ VDS= 700V Low RDS(on) : 1-552 ft (Typ.)
|
OCR Scan
|
PDF
|
SSF6N70A
003b333
003b33M
D03b335
SSF6N70A
|