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    BVCEO 2000 Search Results

    BVCEO 2000 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet
    CO-058SMAX200-002 Amphenol Cables on Demand Amphenol CO-058SMAX200-002 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet
    CO-059BNCX200-000.6 Amphenol Cables on Demand Amphenol CO-059BNCX200-000.6 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 0.5ft Datasheet
    CO-059BNCX200-015 Amphenol Cables on Demand Amphenol CO-059BNCX200-015 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 15ft Datasheet
    CO-142BNCX200-001 Amphenol Cables on Demand Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft Datasheet

    BVCEO 2000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N3501

    Abstract: BTN3501J3
    Text: Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC RCESAT 80V 8A 38mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics


    Original     		PDF C606J3 BTN3501J3 O-252 UL94V-0 N3501 BTN3501J3

    D44H11

    Abstract: D44H11J3
    Text: Spec. No. : C606J3-A Issued Date : 2005.08.15 Revised Date :2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 BVCEO IC RCESAT 80V 8A 60mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics


    Original     		PDF C606J3-A D44H11J3 O-252 UL94V-0 D44H11 D44H11J3

    il1 opto

    Abstract: IL5 10-2
    Text: IL1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA IL1, 20% Min. IL2, 100% Min. IL5, 50% Min. • High Collector-Emitter Voltage IL1 – BVCEO=50 V IL2, IL5 – BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield TRIOS


    Original     		PDF E52744 1-888-Infineon il1 opto IL5 10-2

    Untitled

    Abstract: No abstract text available
    Text: IL1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA IL1, 20% Min. IL2, 100% Min. IL5, 50% Min. • High Collector-Emitter Voltage IL1 – BVCEO=50 V IL2, IL5 – BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield TRIOS


    Original     		PDF E52744 1-888-Infineon

    QUAD OPTO COUPLERS

    Abstract: No abstract text available
    Text: DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. • High Collector-Emitter Voltage ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield


    Original     		PDF E52744 QUAD OPTO COUPLERS

    saturated switches

    Abstract: No abstract text available
    Text: DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. • High Collector-Emitter Voltage ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield


    Original     		PDF E52744 1-888-Infineon saturated switches

    HSC3417

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6618-C Issued Date : 1994.05.12 Revised Date : 2000.10.01 Page No. : 1/3 HSC3417 NPN EPITAXIAL PLANAR TRANSISTOR Features • High–Definition CRT Display Video Output Applications • High Breakdown Voltage: BVCEO=300V


    Original     		PDF HE6618-C HSC3417 HSC3417

    LDA213

    Abstract: No abstract text available
    Text: LDA213 Dual Optocouplers, Unidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units


    Original     		PDF LDA213 LDA213 100mA 3750Vrms DS-LDA213-R04

    LDA212

    Abstract: No abstract text available
    Text: LDA212 Dual Optocouplers, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units


    Original     		PDF LDA212 LDA212 100mA 3750Vrms E7627 DS-LDA212-R05

    LDA211

    Abstract: LDA211S
    Text: LDA211 Dual Optocouplers, Unidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units


    Original     		PDF LDA211 LDA211 100mA 3750Vrms DS-LDA211-R05 LDA211S

    LDA210

    Abstract: LDA210S
    Text: LDA210 Dual Optocouplers, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units


    Original     		PDF LDA210 LDA210 100mA 3750Vrms E7627 DS-LDA210-R05 LDA210S

    MOC8050M

    Abstract: MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler
    Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a


    Original     		PDF MOC8021M, MOC8050M MOC8021M MOC8050M MOC8021M) MOC8050M) E90700, MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler

    LDA111

    Abstract: No abstract text available
    Text: LDA111 Optocoupler, Unidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1


    Original     		PDF LDA111 LDA111 100mA 3750Vrms E76270 DS-LDA111-R06

    MOC8050

    Abstract: MOC8050M MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM
    Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a


    Original     		PDF MOC8021M, MOC8050M MOC8021M MOC8050M MOC8021M) MOC8050M) E90700, MOC8050 MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM

    LDA110

    Abstract: optocoupler bi-directional
    Text: LDA110 Optocoupler, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1


    Original     		PDF LDA110 LDA110 100mA 3750Vrms E76270 DS-LDA110-R06 optocoupler bi-directional

    IEC60747-5-2

    Abstract: MOC8021M MOC8050M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM
    Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a


    Original     		PDF MOC8021M, MOC8050M MOC8021M MOC8050M MOC8021M) MOC8050M) E90700, IEC60747-5-2 MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM

    CPC1001N

    Abstract: EIA-481-2 J-STD-033
    Text: CPC1001N Unidirectional Input, Single-Transistor Output Optocoupler Parameter Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current Rating 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with


    Original     		PDF CPC1001N CPC1001N 100mA 1500Vrms E76270 DS-CPC1001N-R03 EIA-481-2 J-STD-033

    Untitled

    Abstract: No abstract text available
    Text: CPC1001N Optocoupler: Unidirectional Input, Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current Rating 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with


    Original     		PDF CPC1001N CPC1001N 100mA 1500Vrms E76270 DS-CPC1001N-R04

    transistor c2030

    Abstract: C2030 PT100M NPN transistor ECB TO-92 transistor c316 date for ic component C316 NPN transistor ECB TO-92 500ma 1A
    Text: CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.04.03 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2030A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability


    Original     		PDF BTC2030A3 UL94V-0 transistor c2030 C2030 PT100M NPN transistor ECB TO-92 transistor c316 date for ic component C316 NPN transistor ECB TO-92 500ma 1A

    D1858

    Abstract: d1858 transistor transistor d1858 btd1858a3 NPN transistor ECB TO-92 500ma 1A IC20I THROUGH HOLE 4 PIN TO 220 PACKAGE IC date for ic component
    Text: CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3 Description • High BVCEO • High current capability • Pb-free package Symbol Outline BTD1858A3


    Original     		PDF C856A3 BTD1858A3 UL94V-0 D1858 d1858 transistor transistor d1858 btd1858a3 NPN transistor ECB TO-92 500ma 1A IC20I THROUGH HOLE 4 PIN TO 220 PACKAGE IC date for ic component

    transistor c2383

    Abstract: C2383 NPN transistor ECB TO-92 500ma 1A transistor c2383 0 c2383 transistor transistor c316 BTC2383A3 C2383 y C2383 d C2383 NPN Transistor
    Text: CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.03.17 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability


    Original     		PDF BTC2383A3 BTA1013A3 UL94V-0 transistor c2383 C2383 NPN transistor ECB TO-92 500ma 1A transistor c2383 0 c2383 transistor transistor c316 BTC2383A3 C2383 y C2383 d C2383 NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 CS202 6 Pin High BVceo Transistor Output Hermetically Sealed Ceramic Optocoupler Circuit and Package Features


    Original     		PDF CS202 BS9000/CECC BS9000 BS5750/ISO9000/EN29000.

    Untitled

    Abstract: No abstract text available
    Text: IL66/ ILD66/ ILQ66 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, With Internal Rbe Single, Dual, Quad Channel Single Channel Features • • • • Internal RBE for High Stability Four Available CTR Categories per Package Type BVCEO > 60 V


    Original     		PDF ILD66/ ILQ66 E52744 ILD66, ILQ66 D-74025 11-Nov-03

    nte160

    Abstract: No abstract text available
    Text: BI-POL AR TRANSISTORS Typical Forward Current Gain Maximum Collector Power Dissipation Watts Case Style Diag. No. Maximum Collector Current (Amps) >C BVCbo BVceo BVebo hre Pd »T Darlington Switch (Compì to NTE2427) SOT-89 555a 0.5 90 80 (CER) 5 2000 Min


    OCR Scan     		PDF NTE2427) OT-89 NTE2426) NTE2429) NTE2428) NTE16005) NTE16004) nte160