5-Volt Data Bus
Abstract: 8096 microcontroller temperature control of 8096 3volt inverter 74HC00 74HC00 CMOS 1N4370A 74HC 5V 74HC00
Text: Interfacing Atmel LV/BV EPROMs on a Mixed 3-volt/5-volt Data Bus EPROM Introduction Interfacing Atmel Corporation’s low voltage LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By
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10/98/xM
5-Volt Data Bus
8096 microcontroller
temperature control of 8096
3volt inverter
74HC00
74HC00 CMOS
1N4370A
74HC
5V 74HC00
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8F SOT-23 PNP on
Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process
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FDLL914
LL-34
FDLL914A
FDLL914B
FDLL916
FDLL916A
8F SOT-23 PNP on
1n4148 5D mark
FDH777
mark fq sot
8F SOT23 PNP
SOT-23 Mark ZF
1N4148 surface mount
NDSJ105
5d surface mount diode
BV 9y transistor
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8096 microcontroller
Abstract: 74HC00 74HC00 small signal output resistance 74HC00 SERIES DATA 3volt inverter 74HC00 analysis 74HC00 CMOS DIODE ZENER BV 74HC00 NOT GATE 8096 microcontroller datasheet
Text: CMOS EPROM Interfacing Atmel LV/BV EPROMs on a Mixed 3-Volt/5-Volt Data Bus Introduction Interfacing Atmel Corporation’s low voltage LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By
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MMB25V6ALT1
Abstract: MMBZ15VALT1 MMBZ20VALT1 MMBZ20VALTI BZ5V6
Text: ‘ MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document bv MMBZ5V6ALT1/D DATA MMBZ5V6ALTI MMBZ6V2ALTI MMBZ15VALTI 5.6, 6.215 &20 Volt SOT-23 Dual Monolithic Common Anode Zeners * MMBz20vALT4~*, Motorola Transient Voltage Suppressors for ESD Protection
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MMBZ15VALTI
OT-23
MMBz20vALT4~
140WI
OW21W15
24W609
2PHX31323E1
MMB25V6ALT1
MMBZ15VALT1
MMBZ20VALT1
MMBZ20VALTI
BZ5V6
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MT 6236
Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which
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MMSF1ONO22D
2W609
MT 6236
Transistor WIG
10NO2Z
woy transistor
AN569
zener diod
MARKING S04
diod zener
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Untitled
Abstract: No abstract text available
Text: 1.5KE SERIES CCD 1500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE FEATURES 6.8 to 440 Volts * 1500 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-201
MIL-STD-202,
5KE250
5KE250A
5KE300
5KE300A
5KE350
5KE350A
5KE400
5KE400A
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Untitled
Abstract: No abstract text available
Text: 1.5KE SERIES CCD 1500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE FEATURES 6.8 to 440 Volts * 1500 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-201
MIL-STD-202,
5KE250
5KE250A
5KE300
5KE300A
5KE350
5KE350A
5KE400
5KE400A
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64-10
Abstract: P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE440
Text: P6KE SERIES VOLTAGE 6.8V ~ 440V 600W Peak Power / 5.0W Steady State 600W Peak Power TVS Elektronische Bauelemente FEATURES * 600 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-15
MIL-STD-202,
P6KE250
P6KE250A
P6KE300
P6KE300A
P6KE350
P6KE350A
P6KE400
P6KE400A
64-10
P6KE10
P6KE10A
P6KE11
P6KE11A
P6KE12
P6KE440
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P4KE10
Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE440
Text: P4KE SERIES 400 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE 6.8 to 440 Volts FEATURES 400 Watts Peak Power * 400 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-41
MIL-STD-202,
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE400A
P4KE10
P4KE10A
P4KE11
P4KE11A
P4KE12
P4KE12A
P4KE13
P4KE440
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p6ke68a
Abstract: zener P6KE160A P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE440
Text: P6KE SERIES 600 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE 6.8 to 440 Volts FEATURES 600 Watts Peak Power * 600 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-15
MIL-STD-202,
catho187
P6KE250
P6KE250A
P6KE300
P6KE300A
P6KE350
P6KE350A
P6KE400
p6ke68a
zener P6KE160A
P6KE10
P6KE10A
P6KE11
P6KE11A
P6KE12
P6KE12A
P6KE13
P6KE440
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Untitled
Abstract: No abstract text available
Text: P4KE SERIES 400 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE 6.8 to 440 Volts FEATURES 400 Watts Peak Power * 400 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-41
MIL-STD-202,
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE400A
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Untitled
Abstract: No abstract text available
Text: P6KE SERIES 600 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE 6.8 to 440 Volts FEATURES 600 Watts Peak Power * 600 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-15
MIL-STD-202,
P6KE250
P6KE250A
P6KE300
P6KE300A
P6KE350
P6KE350A
P6KE400
P6KE400A
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P6KE200
Abstract: P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE440
Text: P6KE SERIES 600 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE 6.8 to 440 Volts FEATURES 600 Watts Peak Power * 600 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-15
MIL-STD-202,
P6KE250
P6KE250A
P6KE300
P6KE300A
P6KE350
P6KE350A
P6KE400
P6KE400A
P6KE200
P6KE10
P6KE10A
P6KE11
P6KE11A
P6KE12
P6KE12A
P6KE13
P6KE440
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P4KE10
Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE440
Text: P4KE SERIES 400 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE RANGE 6.8 to 440 Volts FEATURES 400 Watts Peak Power * 400 Watts Surge Capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time: Typically less than 1.0ps from 0 volt to BV min.
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DO-41
MIL-STD-202,
catho187
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE10
P4KE10A
P4KE11
P4KE11A
P4KE12
P4KE12A
P4KE13
P4KE440
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NTE2360
Abstract: No abstract text available
Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10
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T0220
T0126
NTE2362)
NTE2361)
00D3S27
NTE2360
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diode zener 218
Abstract: diode t48 ECG2322 ECG2322 14 PIN DIP t48 zener ECG2328 218 zener diode 2 Amp zener diode t48 diode T48 regulator
Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at T c = 2 5 °C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO BV c e O bv ebo Max. Collector Current lc Amps Max. Device
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ECG2315
O-220
ECG2316
O-218)
ECG2317
ECG2318
O-220J
T41-1
ECG2337
diode zener 218
diode t48
ECG2322
ECG2322 14 PIN DIP
t48 zener
ECG2328
218 zener diode
2 Amp zener diode
t48 diode
T48 regulator
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ECG2322
Abstract: diode zener 218 2 Amp zener diode ECG2331 ECG2328 ECG2319 ECG zener diode diode t48 ECG2317 ECG2321
Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO BV c e O bv ebo Max. Collector Current ic Amps Max. Device Diss. P q
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ECG2315
O-220
ECG2316
O-218)
ECG2317
ECG2318
ECG2337
O-220J
T41-1
ECG2322
diode zener 218
2 Amp zener diode
ECG2331
ECG2328
ECG2319
ECG zener diode
diode t48
ECG2321
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diode T132
Abstract: resistor 22k ECG2355 resistor 10k ECG2352 ECG2343 ECG2344 ECG2347 resistor 4.7k ECG2365
Text: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BV c e O Max. Collector Current lc Amps Base to Emitter Volts b v EBO Max. Device Diss. PD
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ECG2340
O-126N
T45-1
ECG2341
ECG2342)
ECG2342
ECG2341
ECG2343
SP-92
T13-2
diode T132
resistor 22k
ECG2355
resistor 10k
ECG2352
ECG2344
ECG2347
resistor 4.7k
ECG2365
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resistor 22k
Abstract: ecg2340 ECG2362 ECG2345 diode t48 ECG2349 ECG2341 ECG2342 ECG2343 ECG2344
Text: T ran sistors cont'cl ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BVc e O Base to Emitter Volts BV e b O Max. Collector Current lc Amps Max. Device
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ECG2340
O-126N
T45-1
ECG2341
ECG2342)
ECG2342
ECG2341)
ECG2343
ECG2359)
SP-92
resistor 22k
ECG2362
ECG2345
diode t48
ECG2349
ECG2344
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8096 microcontroller
Abstract: 74HC00 CMOS 74HC00 temperature control of 8096 74HCoo
Text: CMOS EPROM Interfacing Atmel LV/BV EPROMs on a Mixed 3-Volt/5-Volt Data Bus Introduction Interfacing Atmel Corporation's low volt age LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By
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ECG2322
Abstract: s34 zener diode diode t48 s34 diode philips ECG2328 philips ECG2329 ECG2328 ECG2331 ECG zener diode 2 Amp zener diode
Text: PHILIPS E C G INC SHE D Transistors c o n rd j ECG Type Description and Application • bbSB^fi 000715^ S34 « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b o BV c e o
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ECG2315
O-220
ECG2316
O-218)
ECG2317
ECG2318
O-220J
T41-1
ECG2337
ECG2322
s34 zener diode
diode t48
s34 diode
philips ECG2328
philips ECG2329
ECG2328
ECG2331
ECG zener diode
2 Amp zener diode
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VN0610L
Abstract: TL032
Text: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range
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VN0610L
VN10KE/
VN10KM/
VN10KT
OT-23
O-237
OT-23
150cC
VN10KE
TL032
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VN10KM
Abstract: vn10ke
Text: _ I CGIOOIC \J N-Channel Enhancement-Mode /WOS Transistors, Zener Gate Protected C O RPO RATIO N VN0610L / VN10KE/ VN10KM/ VN10KT FEATURES ORDERING INFORMATION • • • • Part Available in Surface Mount SOT-23 Zener protected Low rDS on <SQ 60V Bv Package
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VN0610L
VN10KE/
VN10KM/
VN10KT
OT-23
VN10KE
VN10KM
XVN10KM
O-237
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VN10KM
Abstract: VN10K 55C 15v ZENER DIODE C06 60V VN10KE vn10kt VN0610L XVN10KM VN010KE
Text: I » U lU W It N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • • • • Part Available in Surface Mount SOT-23 Zener protected Low rDS on <5£i 60V Bv VN0610L
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VN0610L
VN10KE/
VN10KM/
VN10KT
OT-23
VN10KE
VN10KM
O-237
VN10KT
VN10K
55C 15v ZENER DIODE
C06 60V
XVN10KM
VN010KE
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