BV EI 382 1193
Abstract: BV EI 300 ta70-b
Text: - HAHN - Elektrobau GmbH phone: +49 6402 808-0 Bellersheimer Strasse 45 telefax: +49 (6402) 808-60 35410 Hungen e-mail: info@hahn-trafo.de Germany data sheet: BV EI 382 1193 item height/packet height power (ta70/B)
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com/english/daten/3821193
ta70/B)
B599935-C120-A70.
BV EI 382 1193
BV EI 300
ta70-b
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BV EI 302 2000
Abstract: Trafo datasheets BV 302
Text: phone: 49 6402 808-0 HAHN - Elektrobau GmbH telefax: 49 (6402) 808-60 Bellersheimer Strasse 45 e-mail: info@hahn-trafo.de D - 35410 Hungen data sheet: BV EI 302 2000 size 2 a: height 21.8 mm 1.8 VA ta 40/F
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com/english/daten/3022000
BV EI 302 2000
Trafo datasheets
BV 302
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BV EI 302 2022
Abstract: BV EI 306 3365 BV EI 303 2011 BV EI 305 2800 BV EI 304 2082 BV EI 305 2057 BV EI 304 2081 BV EI 304 2047 BV EI 302 2021 BV EI 303 34
Text: EI 30 Трансформаторы для печатных плат Выходная мощность: 0,5 BA – 0,7 BA • Компактность • Обязательное тестирование на соответствие стандартам ENEC 10, VDE, UL и CSA
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BV EI 382 1191
Abstract: BV EI 382 1186 EI 38 BV EI 382 1194 BV EI 382 1190 BA231 BV EI 382 1189 BV EI 382 1195 BV EI 382 1192 BV EI 300
Text: Выходная мощность: 4,5 BA EI 38 Трансформаторы для печатных плат • Мощность – до 6 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного предохранителя от токов короткого
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MB87L2250
Abstract: carrier frequency offset estimation in ofdm viterbi algorithm mb87j "channel estimation"
Text: Product Data Sheet April 1999 Edition 1.2 MB87J205A DVB Terrestrial OFDM Demodulator/FEC OVERVIEW Plastic Flat Package FPT-144P-M08 Fujitsu’s MB87J205A is an ETC 300 477 compliant Single Chip Demodulator including Forward-Error Correction Function and A/D Converter for DVB Terrestrial Digital
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MB87J205A
MB87J205A
MB87J205A.
FPT-144P-M08
MB87L2250
carrier frequency offset estimation in ofdm
viterbi algorithm
mb87j
"channel estimation"
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IN4942
Abstract: 1N4946 IN4948 1N4942 1N4943 1N4944 1N4945 1N4947 1N4948 AII3
Text: EDAL INDU STR IES 3 0 c]S71b □ G Q Q 3 2 ei T7Ô M5E D INC EDL t ' ói-ì.3 .250» 1» » t 1« .115” DIA- .032” DIA, Bv PIV SEE CHART Io Is 1 AMP - Vf 1.3 v @ 1 AMP Ir 500uA MAX. @ ’ PIV @ AMPS SEE CHART trr STYLE & • @ Alte STAMP EQÏÏIV. TO
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GQQ32ci
500uA
1N4942'
1N4943
1N4944
1N4945
1N4946
1N4947
1N4948
1N4942
IN4942
IN4948
1N4948
AII3
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d3s diode
Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Text: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2
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18-Lead
AN0116NA
AN0120NA
AN0130NA
AN0132NA
AN0140NA
SOW-20*
AN0116WG
AN0132WG
AN0140WG
d3s diode
EIGHT n-channel MOSFET ARRAY
AN0140ND
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ap0420
Abstract: AP0432
Text: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V
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-160V
-200V
-300V
-320V
-400V
-100V
-250V
18-Lead
AP0416NA
AP0420NA
ap0420
AP0432
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Untitled
Abstract: No abstract text available
Text: H A R R RFG40N10LE, RFP40N10LE, RF1S40N1 OLE, RF1S40N1OLESM IS semiconductor 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 40 A, 100V r D S O N = 0.040Q • 2kV ESD Protected
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RFG40N10LE,
RFP40N10LE,
RF1S40N1
RF1S40N1OLESM
O-247
RF1S40N10LE,
RF1S40N10LESM
O-263AB
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC MMBT2222A 42E D B 7 ^ 4 1 4 2 000=1033 S BISM6K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C C h a ra c te ris tic Sym bol R a tin g U n it Collector-Base Voltage Veso 75 V Collector-Emitter Voltage
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MMBT2222A
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TLP626
Abstract: No abstract text available
Text: GaAs IRED-a PHOTO-TRANSISTOR TLP626,-2,-4 TLP626 PRO GRAM M ABLE CONTROLLERS AC/D C-IN PU T MODULE TELECOM M UNICATION The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared em itting diodes connected in inverse parallel, optically coupled to a
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TLP626
TLP626)
TLP626,
TLP626-2
TLP626-4
929dH
939dU
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44t transistor
Abstract: transistor 1B15 T110 imx7 transistor 44t
Text: h 7 > v 7> £ /Transistors I M X 7 1 IMX7 T M V U - x ' y * K U î - J I ' K t V W X Isolated Mini-Mold Device /Medium Power Amp. • W B ’Ti&EI/Dim ensions Unit : mm 1) SMT (SC-59) tW i — h Tt' 5o 2) s M T < D i « î i * « i c j : » j , m u m j>(4)
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SC-59)
SC-74
44t transistor
transistor 1B15
T110
imx7
transistor 44t
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marking Y1 transistor
Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Text: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
300mA
150mA,
300mA,
100kHz
100MHz
marking Y1 transistor
y1 transistor
complementary npn-pnp power transistors
y1 npn
transistor marking y1
FMB2227A
Supersot 6
transistor y1
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Untitled
Abstract: No abstract text available
Text: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold
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LP0701
LP0701N3
LP0701LG
LP0701ND
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vp1316
Abstract: VP1316N2 VP1316N3 VP1320N2 VP1320N3 VP13C
Text: SUPERTEX INC Dl T i F | Û 7 ? 3 2 ti 5 0 0 0 1 7 5 1 7 |~ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVdss / Order Number / Package TO-92 TO-39 *D ON qqS (max) (min) -160V 100Î2 -100mA VP1316N2 VP1316N3 -100mA VP1320N2 VP1320N3
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00D17S1
VP13C
-100mA
VP1316N2
VP1316N3
-200V
VP1320N2
VP1320N3
QD017SM
vp1316
VP1316N3
VP1320N3
VP13C
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lc 4011
Abstract: No abstract text available
Text: 2SC2063M/2SC4011 I ' 7 > v ^ £ /Transistors 2SC 2063M 2S C 4011 I t : £=*•'> 7 ^ 7 ^ - ^ NPN Epitaxial Planar NPN Silicon Trannsistors ¡ÜJil>j£*Blliffl/R F Amplifier • M fé '+ ìiE I/D im e n s io n s Unit : mm •» ft (Cob= 1 .6 p F T y p .)
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2SC2063M/2SC4011
2063M
lc 4011
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transistor C239
Abstract: NPN C239
Text: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Em itter Voltage :B C 2 3 7 Rating Unit V cES V 50 30 V :B C 2 3 7 45 V :B C 2 3 8 /2 3 9
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BC237/238/239
BC239
BC237
7Sb4142
0025Q53
transistor C239
NPN C239
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BV 726 C
Abstract: BV 724 C
Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology
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LP0701
LP0701N3
LP0701LG
LP0701ND
BV 726 C
BV 724 C
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L902
Abstract: 2SC3838K 2SC4083 T106 T107 T146 T147 FC 0137 ic lC 7520
Text: h "7 >V 7> £ /Transistors 2SC3838K/2SC4083 I t N P N Epitaxial Planar NPN Silicon Transistors ¡SJgj& igliffl/RF Amplifier 2SC3838K 2SC4083 • ^Hfé'íJ'i&EI/Dimensions Unit : mm 1) fT=3.2GHz (Typ.) 2SC3838K 2) Cc-fbb ¡F'M < ¡SflJiSo 2SC4083 2 .9 ± 0 .2
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2SC3838K/2SC4083
2SC3838K
2SC4083
2SC3838K
SC-59
VCE-10V
Q110DS
IS22I
L902
2SC4083
T106
T107
T146
T147
FC 0137
ic lC 7520
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PCH200EG
Abstract: pch200ER PC200TWRG1 PC200TR5
Text: a?E j> LEDTRONICS üeiTiimn LEDTRONICS,Inc 5453705 0000320 7 • -"P 4 /-Z 2 » RIGHT ANGLE MOUNT- DIFFUSED £ CLEAR T O 5mm PC BOARD LEDs Model PC19Q/200 HI-EFF/ULTRA/BIC0L0R5/RESIS FEATURES: X RIGHT ANGLE MOUNT AT 0.25" CEN TERS. S ID E STACKABLE X CHOICE OF LED S: STD RED, H I-E F F IC , ULTRA TO 3000MCD,
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PC19Q/200
3000MCD,
12VDC
5380H)
635rtffl
S85nm
570nm
555nm
G35nm
585nm
PCH200EG
pch200ER
PC200TWRG1
PC200TR5
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VN10KN
Abstract: VN10KN9 vn10k
Text: V N 10K Mï Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS / ^DS<ON *D ON) BV dgs (max) (min) TO-52 TO-92 60V 5£2 0.5A VN10KN9 VN10KN3 Advanced DMOS Technology High Reliability Devices
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VN10KN9
VN10KN3
300ns,
VN10K
VN10KN
vn10k
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Untitled
Abstract: No abstract text available
Text: KSR1014 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(Ri = 4.7Kii, R ,=47K!i) • Complement toKSR2014 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1014
toKSR2014
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 300V • V • rDS ON ( M A X ) .
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FL16KM-6A
O-220FN
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VN0116N3
Abstract: VN0116N5 vN0116N2 VN01-1 VN0116 VN0120N5
Text: 0 Supertex inc. VN 01C N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV0SS/ ^DS O N ' d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 Dicet 160V 10£2 0.4A VN0116N2 VN0116N3 VN0116N5
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VN0116N2
VN0120N2
VN0116N3
VN0120N3
O-220
VN0116N5
VN0120N5
VN0116ND
VN0120ND
VN01C
VN01-1
VN0116
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