Untitled
Abstract: No abstract text available
Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology
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LP0701
LP0701N3
LP0701LG
LP0701ND
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BV 726 C
Abstract: BV 724 C
Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology
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LP0701
LP0701N3
LP0701LG
LP0701ND
BV 726 C
BV 724 C
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BV 726
Abstract: mosfet analog switch D129 D125
Text: These drivers were designed to function as a level shifter and buffer between low level logic and the control gate of FET analog switches. Output voltage ratings are as high as 50V. U T P U T S OFF Level v out OFF Basic Part Number (Note 2) I N P U T S D125
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S-0150-01
Abstract: HYPERTAC CONTACT PIN 18024 S-0250-01 HYPERTAC mdm S-0350-01 SH463 S0150.01 extraction tool S0150-01 a2700 AF8 CRIMPING TOOL
Text: L Series Modular Connectors 5.50 8.25 11.00 11.00 A Therefore a “step” is defined as the length used by each assembled element. - An elementary step is defined as 5.50 mm - The letter “A” is the sum of the dimensions of the contact elements. Hypertac modular connectors employ a do-it-yourself
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con99
M310/WA23
TP1290/M0601
S-0150-01
HYPERTAC CONTACT PIN 18024
S-0250-01
HYPERTAC mdm
S-0350-01
SH463
S0150.01 extraction tool
S0150-01
a2700
AF8 CRIMPING TOOL
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C495 transistor
Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
BS9300
2N2219A
C495 transistor
c735
2N1893 equivalent
c644
C735 O
2N2222 hfe
C749
transistor C633
NPN C460
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DF412
Abstract: DF320 DF320A SILICONIX df412 D125 D129 D169 DF322 DF328 dual MOS ANALOG SWITCHES
Text: These drivers were designed to function as a level shifter and buffer between low level logic and the control gate of FET analog switches. Output voltage ratings are as high as 50V. U T P U T S OFF Level v out OFF Basic Part Number (Note 2) I N P U T S D125
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DF320A
DF320,
500ms
DF322
DF328
16-lead
DF412
40-pin
DF320
DF320A
SILICONIX df412
D125
D129
D169
DF322
dual MOS ANALOG SWITCHES
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IEC 947-7-1 2.5 mm terminal block
Abstract: Ex-94 8675U UK16N
Text: Module no:3006043 LabelId:3006043 Operator:Phoenix 18:51:39, Donnerstag, 28. Juni 2001 UK 16 N Terminal width 12.2 IEC 2 [mm ] rigid solid flexible stranded AWG IEC 947-7-1 2.5-25 4-16 12-4 EN 50 019 * 2.5-25 4-16 – I U [A] [V] 101 800 88/72 726 * Certificate no.: KEMA Ex-94.D.8675U
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Ex-94
8675U
IEC 947-7-1 2.5 mm terminal block
8675U
UK16N
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C736
Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
BS9300
2N2219A
C736
C495 transistor
bc303 equivalent
2N2222A 026
C735
bc143 equivalent
bc143
C644
equivalent transistor 2N1711
transistor c633
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NA51 transistor
Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn
Text: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding
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tSD113D
O-126
T0-220
O-126
Q03SS7b
10iiF
33-If
NB021EY
NB122EY
NR001E
NA51 transistor
NA51W
power transistor na51
na52 transistor
NA52W
NA52W pnp
na51
NA52U
na52
na51 npn
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Untitled
Abstract: No abstract text available
Text: 4 DE D E3 34^=1738 0 0 0 1 1 1 0 A ^ S E N I FASCO INDS/ SENISYS r -^ 1 ^ 7 i Array Chips — Detectors Clairex offers a broad range of custom and stock dual and multichannel chips and arrays. Chips may be selected for special electrical requirements, i.e.,
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Phoenix Contact UK 5N fbi
Abstract: EX-95
Text: Module no:3005073 LabelId:3005073 Operator:Phoenix 18:50:29, Donnerstag, 28. Juni 2001 UK 10 N Terminal width 10.2 IEC 2 [mm ] rigid solid flexible stranded AWG IEC 947-7-1 0.5-16 0.5-10 20-6 EN 50 019 * 0.5-16 0.5-10 – I U [A] [V] 76 800 73/57 726 * Certificate no.: KEMA Ex-95.D.3678U
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Ex-95
3678U
Phoenix Contact UK 5N fbi
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C495 transistor
Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Text: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75
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BFT39
BFT40
BFT41
BFT29
BFT30
BFT31
BFY50
BFY51
BFY52
BFT53
C495 transistor
transistor c495
C735
c495
bc300 equivalent
NPN C460
BFY50 equivalent
u c756
2n-2411
2n1613 equivalent
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Ex-94
Abstract: 7133U UK6N
Text: Module no:3004524 LabelId:3004524 Operator:Phoenix 18:50:03, Donnerstag, 28. Juni 2001 UK 6 N Terminal width 8.2 IEC 2 [mm ] rigid solid flexible stranded AWG IEC 947-7-1 0.2-10 0.2-6 24-8 EN 50 019 * 0.2-10 0.2-6 – I U [A] [V] 57 800 53/38 726 * Certificate no.: KEMA Ex-94.C.7133U
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Ex-94
7133U
7133U
UK6N
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oni 350 photo
Abstract: No abstract text available
Text: TN 06D LJ Supertex me. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON) I d (ON) ^G S (th ) Order Number / Package (max) (min) (max) TO-92 DICE* 350V 10Q 1.0A 1.8V TN0635N3 TN0635ND 400V 10 fi 1.0A 1.8 V TN0640N3
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TN0635N3
TN0640N3
TN0635ND
TN0640ND
TN06D
oni 350 photo
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TN0624N2
Abstract: No abstract text available
Text: ^ S u p e rte x in c . T N 06C Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss/ R DS ON ' d (ON) V GS(th) b v dgs (m ax) (min) (max) TO-39 TO-92 200V 6S i 1.0A 1.6V
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TN0620N3
TN0624N3
TN0620N2
TN0624N2
O-220
TN0620N5
TN0624N5
TN0620ND
TN0624ND
TN06C
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TN0535
Abstract: No abstract text available
Text: - J / i r. ^ r L TN0535 TN0540 z N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON V (max) (min) (max) TO-92 DICE+ 350V 22Q 250mA 2.0V TN0535N3 TN0535ND 400V 22Q 250mA 2.0V TN0540N3 TN0540ND g S(U i ) Order Number / Package
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TN0535
TN0540
TN0535N3
TN0540N3
250mA
250mA
TN0535ND
TN0540ND
TN0535/TN0540
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pqhxn
Abstract: hn 729
Text: 0123456789 2 2122742 0 ÛÜßÝÞ 5798274 614!2 "##5299659 $86%2 àáâãäåáæçèéêëìäíîáïðñìä òäóðôôéõäáôäö÷åøäóçùñéôéùóäúêèáûùëäüäèùêï÷ôîùùä {|}~
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Untitled
Abstract: No abstract text available
Text: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM
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cr122
340F-03
O-247)
O-251)
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Untitled
Abstract: No abstract text available
Text: Module no:3008012 LabelId:3008012 Operator:Phoenix 18:54:37, Donnerstag, 28. Juni 2001 UK 35 Terminal width 15.2 IEC rigid flexible I U stranded AWG [A] [V] IEC 947-7-1 0.75-50 0.75-35 18-0 150 1000 EN 50 019 * 0.75-50 0.75-35 – 145/112 726 2 [mm ] solid
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Ex-94
8675U
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LM75C
Abstract: MTL 728 LM75 LM75CIM-3 LM75CIM-5 LM75CIMX-3 LM75CIMX-5 M08A lm7s national semiconductor
Text: LM75 N a t i o n a l S e m i c o n d u c t o r tß LM75 Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface General Description Features The LM75 is a temperature sensor, Delta-Sigma analog-todigital converter, and digital over-temperature detector with
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LM12438
LM4040)
bS01125
TL/H/126S8-13
TL/HV12658-14
TL/H/12658-15
bS01122
LM75C
MTL 728
LM75
LM75CIM-3
LM75CIM-5
LM75CIMX-3
LM75CIMX-5
M08A
lm7s national semiconductor
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s125 transistor
Abstract: The 1901 is a COMMON BASE transistor
Text: 315 689-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • Ultra Fast Rise Time — 2.8 nS Typical Wide Bandwidth — 225 MHz Typical Variable Gain — 0 to 80 % On Board Reference Output 50 Vpp Output Voltage Swing Blanking Capability
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MII-Std-1772
1901B
Mll-H-38534
s125 transistor
The 1901 is a COMMON BASE transistor
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3vf1
Abstract: 3TF44 siemens 3th42 3VF6 3VU13 7pr41 3TF3 3TH44 siemens 3th2 3na3 372 siemens
Text: Anhang Normen und Approbationen Bezeichnungszubehör für Schaltgeräte Seite Publikationen, Normen, Bestimmungen, Approbationen – Wichtige Publikationen und Bestimmungen – Prüfbehörden, ApprobationsKennzeichen und Approbationspflicht – Schiffsklassifikationsgesellschaften
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AUIRF7648M2TR
Abstract: No abstract text available
Text: PD - 96317A AUTOMOTIVE GRADE AUIRF7648M2TR AUIRF7648M2TR1 DirectFET Power MOSFET V BR DSS RDS(on) typ. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile
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6317A
AUIRF7648M2TR
AUIRF7648M2TR1
AUIRF7648M2
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AUIRF7648M2
Abstract: BV 726 B
Text: PD - 96317B AUIRF7648M2TR AUIRF7648M2TR1 • • AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET V BR DSS 60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5mΩ other Heavy Load Applications max. 7.0mΩ
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96317B
AUIRF7648M2TR
AUIRF7648M2TR1
AUIRF7648M2
BV 726 B
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