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    BV 480 Price and Stock

    MAKESafe Tools Inc IMB-V480-P3-HP10

    IND. MTR BRAKE 480V 3P 10HP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IMB-V480-P3-HP10 Bag 1
    • 1 $3395
    • 10 $3395
    • 100 $3395
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    MAKESafe Tools Inc IMB-V480-P3-HP5.0

    IND. MTR BRAKE 480V 3P 5HP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IMB-V480-P3-HP5.0 Bag 1
    • 1 $3340
    • 10 $3340
    • 100 $3340
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    Schneider Electric BVS480XDPDR

    DIN Rail Power Supplies Din Rail Mount Switch Power Supply Battery Back Up 24V DC 20 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BVS480XDPDR 1
    • 1 $218.94
    • 10 $212.03
    • 100 $208.98
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    Infineon Technologies AG CY7C1480BV33-167AXI

    SRAM 72MB (2Mx36) 3.3v 167MHz Sync SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CY7C1480BV33-167AXI 1
    • 1 $232.99
    • 10 $203
    • 100 $202.45
    • 1000 $202.45
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    Siemens LEBV1C003480B

    Contactors - Electromechanical CONTACTOR,LTG,EH,N1,30A,3NO,480V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LEBV1C003480B
    • 1 $1570.94
    • 10 $1570.94
    • 100 $1570.94
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    BV 480 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XCV100E

    Abstract: MB 300E XCV300E xc2v1000 PCI64-CL-FL-X100-C-256 RM7000C X300 PCI64-CL-P AK 1080 sdram full example c code
    Text: TM Product Information January 2003 rev. 2002-2.03 LEONARDO CL CameraLinkTM Base-Medium-Full 2003 ARVOO Trading BV, all mentioned trademarks and registered trademarks are acknowledged. Specifications, models and options are subject to changes without any notice by ARVOO Trading BV.


    Original     		PDF cPCI64-CL-P-DB-X300-I-128 XCV300E RM7000A XCV100E MB 300E xc2v1000 PCI64-CL-FL-X100-C-256 RM7000C X300 PCI64-CL-P AK 1080 sdram full example c code

    RGB15

    Abstract: YUV422 input analog CVBS output YUV411 YUV422 YUV444 RGB24 104-Plus video scaler RGB24 RGB32
    Text: COLORYTM Product Information May 2003 rev. 2003-1.1 cost attractive CVBS framegrabber 2003 ARVOO Trading BV, all mentioned trademarks and registered trademarks are acknowledged. Specifications, models and options are subject to changes without any notice by ARVOO Trading BV.


    Original     		PDF PC/104plus 32bit/33MHz) RGB15, RGB16, RGB24, RGB32, YUV411, YUV422, YUV444, RGB15 YUV422 input analog CVBS output YUV411 YUV422 YUV444 RGB24 104-Plus video scaler RGB24 RGB32

    5-Volt Data Bus

    Abstract: 8096 microcontroller temperature control of 8096 3volt inverter 74HC00 74HC00 CMOS 1N4370A 74HC 5V 74HC00
    Text: Interfacing Atmel LV/BV EPROMs on a Mixed 3-volt/5-volt Data Bus EPROM Introduction Interfacing Atmel Corporation’s low voltage LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By


    Original     		PDF 10/98/xM 5-Volt Data Bus 8096 microcontroller temperature control of 8096 3volt inverter 74HC00 74HC00 CMOS 1N4370A 74HC 5V 74HC00

    8096 microcontroller

    Abstract: 74HC00 74HC00 small signal output resistance 74HC00 SERIES DATA 3volt inverter 74HC00 analysis 74HC00 CMOS DIODE ZENER BV 74HC00 NOT GATE 8096 microcontroller datasheet
    Text: CMOS EPROM Interfacing Atmel LV/BV EPROMs on a Mixed 3-Volt/5-Volt Data Bus Introduction Interfacing Atmel Corporation’s low voltage LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By


    Original     		PDF

    MT 6236

    Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which


    Original     		PDF MMSF1ONO22D 2W609 MT 6236 Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener

    SSF3018

    Abstract: TO220 Single 100V 60A Mosfet Avalanche diod p channel mosfet 100v top switch to220
    Text: SSF3018 Feathers: ID=60A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=100V


    Original     		PDF SSF3018 15mohm SSF3018 TO220 Single 100V 60A Mosfet Avalanche diod p channel mosfet 100v top switch to220

    C495 transistor

    Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
    Text: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 C495 transistor transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent

    C495 transistor

    Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C495 transistor c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 transistor C633 NPN C460

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598

    marking r2k

    Abstract: marking r1c GAJ SOT23 R1P SOT-223
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.


    OCR Scan     		PDF OT-23) SSTH30 MMST1130 SC-59/Japanese BCX70K BCX71G BCX71H BCX71J BFS17 marking r2k marking r1c GAJ SOT23 R1P SOT-223

    8096 microcontroller

    Abstract: 74HC00 CMOS 74HC00 temperature control of 8096 74HCoo
    Text: CMOS EPROM Interfacing Atmel LV/BV EPROMs on a Mixed 3-Volt/5-Volt Data Bus Introduction Interfacing Atmel Corporation's low volt­ age LV/BV EPROMs on a common data bus with standard 5-volt devices can be achieved with relative ease if a few simple guidelines are followed. By


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.


    OCR Scan     		PDF FQB6N60, FQI6N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.


    OCR Scan     		PDF FQB1N60, FQI1N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF20N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. •


    OCR Scan     		PDF FQAF20N40

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.


    OCR Scan     		PDF FQB2N60, FQI2N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.


    OCR Scan     		PDF FQB7N60, FQI7N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    OCR Scan     		PDF FQB5N60, FQI5N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.


    OCR Scan     		PDF FQB3N60, FQI3N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB4N60, FQI4N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 15nC Typ.


    OCR Scan     		PDF FQB4N60, FQI4N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF7N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. •


    OCR Scan     		PDF FQAF7N60

    diode SM 78A

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •


    OCR Scan     		PDF FQAF12N60 0-55Q diode SM 78A

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQA20N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. •


    OCR Scan     		PDF FQA20N40

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.


    OCR Scan     		PDF FQB12N60, FQI12N60 0-55Q D2PAK/TO-263 D2PAK/TO-263

    diode SM 78A

    Abstract: FQAF12N60
    Text: QFET N-CHANNEL FQAF12N60 FEATURES BV dss = 600V Advanced New Design R DS ON = ° - 7 i2 Avalanche Rugged Technology lD = 7.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 42nC (Typ.)


    OCR Scan     		PDF FQAF12N60 0-55Q diode SM 78A FQAF12N60