STS Bv 1500
Abstract: No abstract text available
Text: BV 8, BV 12, BV 16 High Voltage Si-Rectifier Si-Hochspannungs-Gleichrichter Nominal current Nennstrom 350 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 7000. 15000 V Plastic case Kunststoffgehäuse 0 6.3 x 21 [mm] Weight approx. Gewicht ca.
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UL94V-0
R0D1RS14
DGG174
000017S
STS Bv 1500
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Untitled
Abstract: No abstract text available
Text: BV 4, BV 6 Si-Hochspannungs-Gleichrichter High Voltage Si-Rectifier 50 mA Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 000. 5 000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0
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UL94V-0
R0D1RS14
000017S
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ABVZ
Abstract: 1N1742 1N1742A 20C6
Text: MIL-S-19500/298 21 Ocmbor 1964 ● MILITARY SEMICONDUCTOR SPECIFICATION DEVfCE, TYPE 1. USAF DIODE, SILICON 1N1742A SCOPE 1.1 Oescri Ion. This specification covers voltxe-re + erence &ode, and is in accordance ehalf not be used for new design. 1.2 Madmum
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MIL-S-19500/298
1N1742A
MLL-5-19500
P12EPARATJON
MIL-S-195W.
K2L-S-195W
ABVZ
1N1742
1N1742A
20C6
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bv 1500 sts
Abstract: TZ40 TZ150A TZ45A TZ78 TZ180 tz40a TZ17 TZ17A TZ18
Text: 8 1349 76 S E M ICON INC, S T-SEMICOND T7 D 97D 00584 “T - II-Ï3 » e | fll34T7b DD0DSA4 5 | ~ SILICON TRANSIENT VOLTAGE SUPPRESSORS Peak Pulse Power 15,000 Watts ST-S Part No. Revene Stand-OH Voltage Not* 1 Vr Volt» TZ17 TZ17A TZ18 TZ18A TZ20 TZ20A
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TZ17A
TZ18A
TZ20A
TZ22A
TZ170A
TZ180
TZ180A
TZ200
TZ200A
TZ220
bv 1500 sts
TZ40
TZ150A
TZ45A
TZ78
tz40a
TZ17
TZ18
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1N1742A
Abstract: 1N1742 MIL-S-19500 1N742A 1N742 MIL marking diode military part marking symbols origin semiconductor diode
Text: NIL SPECS i c | □□□Q125 00D3fl47 5 | M I L - S - 1 9 5 0 0 / 2 9 8 U SA F I NOTICE I IOF VALIDATION l NOTICE 1 17 AUGUST 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N742A MIL-S-19500/298(USAF) and Amendment 3, dated 24 July 1968, have been reviewed &
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1N742A
MIL-S-19500/298
00Q3fl4fl
S-19500/298
MIL-S-19500.
MIL-S-19500
1N1742A
1N1742
1N742A
1N742
MIL marking diode
military part marking symbols
origin semiconductor diode
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FQA85N06
Abstract: 0028126
Text: QFET N-CHANNEL FQA85N06 FEATURES BVqss = 60 V Advanced New Design R d s ON = 0 0 1 Avalanche Rugged Technology lD = 100A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 86nC (Typ.)
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FQA85N06
FQA85N06
0028126
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H124
Abstract: DSUB111 M33 TRANSISTOR RB1010 DIOD003 H124-H125 ws106 T08I3 BF113 H125
Text: AN1598/D H124, 125, 350−352 Translator I/O SPICE Modelling Kit Prepared by: Debbie Beckwith Andrea Diermeier ECL Applications Engineering http://onsemi.com APPLICATION NOTE This application note provides the SPICE information necessary to accurately model system interconnect situations for
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AN1598/D
H124
DSUB111
M33 TRANSISTOR
RB1010
DIOD003
H124-H125
ws106
T08I3
BF113
H125
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DSUB111
Abstract: H124 PNT02 H124-H125 XR2444 AN1598 npn TTL LOGIC pspice model designing with mecl 10,000 H352 H351
Text: AN1598 Application Note H124, 125, 350-352 Translator I/O SPICE Modelling Kit Prepared by Debbie Beckwith Andrea Diermeier ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect situations for designs which utilize the translator circuits of
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AN1598
MECL10KH
AN1598/D
DL140
DSUB111
H124
PNT02
H124-H125
XR2444
AN1598
npn TTL LOGIC pspice model
designing with mecl 10,000
H352
H351
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SK1512
Abstract: 10i2 2SK1512 SC-65
Text: rw r 4£| \jyjc./ u i i i»w 1. Scope This sp ecifies Fuji 2 . Outline I Construction B ) Application I ) Outview power MOSFET 2 S K 1 5 1 2 - 0 1 D N-channel enhancement mode power MOSFET for switching T0-3P MK5C25623) 3 . Absolute maximum ratings at Tc=25 *C (unless otherwise specified)
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MK5C25623)
SK1512
T0-228AA
SC-65
SK1512
10i2
2SK1512
SC-65
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U6302
Abstract: 1.5K82 1N4295 1.5K9.1A wcx 332 S860 sk47a ke200a IM270 1K6276A
Text: flICRÔSEMI CORP ESE D • bllSflhS 0001170 1 . jf£ \ T 'ih Z 3 Microjsemi Corp. ' Tfì9<fiod6e*p6f& SANTA ANA. CA SCOTTSDALE,AZ For more information calli 602 941-6300 ' or » ri 4 e l f B f i O t h r u , «*1*1 liO I V B O iO L IIIU • I FEA TU R ES
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1N6267
1N6303A
GGT54
U6302
1.5K82
1N4295
1.5K9.1A
wcx 332
S860
sk47a
ke200a
IM270
1K6276A
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ASN100
Abstract: IXSH45N100 bv 1500 sts
Text: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20
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45N100
O-247
O-204
ASN100
IXSH45N100
bv 1500 sts
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8205
Abstract: No abstract text available
Text: S T S 8205 S amHop Microelectronics C orp. Nov. 19 2004 ver 1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable.
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HEXFETs FETs
Abstract: h184
Text: D a ta INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7HO N-CHANNEL RAD HARD 100 Volt, 0.700, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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1x105
1x1012
H-184
IRHG7110
H-185
HEXFETs FETs
h184
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STS Bv 1500 current transformers
Abstract: Wiring Diagram thermostat NC 40 NC 90 ACE850 V/STS Bv 1500 current transformers EGX300 umi x22
Text: Electrical network protection Sepam series 20, series 40, series 60, series 80 Digital protection relays Catalogue 2011 Sepam series 20 Sepam series 40 Sepam series 60 Sepam series 80 General Content Range description 1 Sepam series 20 and Sepam series 40
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SEPED303005EN
STS Bv 1500 current transformers
Wiring Diagram thermostat NC 40 NC 90
ACE850
V/STS Bv 1500 current transformers
EGX300
umi x22
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H30P
Abstract: No abstract text available
Text: # IE E E Standard Microcomputer System Bus IE E E D ecem b er 29, 1 9 8 3 Published by The Institute of Electrical and Electronics Engineers, Inc 345 East 47th Street, New York, NY 10017, USA SH 09001 IEEE Standard Microcomputer System Bus Sponsor Standards Committee of the
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8/16-bit
20-bit
16-bit
M20I16
H30P
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MN1554
Abstract: ram tite 45 MN1551 MN1500 MN1550 pshxy
Text: PANASONIC INDL/ELEK -CIO 72 Î>É"| 1^33052 DOOSñt.1 3 |~~ MN 1500 Family— 5 MN 1554 MN 1550 Series DD 'J £ a —$>(4-Blt) 6932852 PANASONIC 72C INDL»ELECTRONIC 05861 MN1 554(M N 1 5 5 0 Seríes igttffê • CMOS 4 M'V I- l f - y y - T O n a y ü a - J
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MN1500
MN1554
MN1550
MN1554
EC-1500A
MN1500
42-DIP/
42-SDIP
ram tite 45
MN1551
pshxy
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smd transistor JE
Abstract: 302401
Text: W fjim H E W L E T T wLKM P A C K A R D Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix for available extensions.
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6N140A*
HCPL-675X
HCPL-570X
HCPL-177K
HCPL-573X
HCPL-673X
MIL-PRF-38534
QML-38534,
6N138/9,
5966-2799E
smd transistor JE
302401
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Untitled
Abstract: No abstract text available
Text: WL¡m H EW LETT wLEM PACKARD Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix for available extensions. Features • Dual Marked w ith Device
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6N140A*
HCPL-675X
HCPL-570X
HCPL-177K
HCPL-573X
HCPL-673X
MIL-PRF-38534
QML-38534,
5966-2799E
5968-0554E
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smd transistor 1yc
Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Text: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice
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6N140A*
HCPL-675X
HCPL-570X
HCPL-177K
HCPL-573X
HCPL-673X
IL-PRF-38534
L-38534,
5964-2063E
5966-2799E
smd transistor 1yc
smd tr 1yc
smd marking ACH
marking code yc SMD Transistor
8302401E
marking code EA SMD Transistor
8302401EA
A13j
6n140a
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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n627
Abstract: AFAA TRANSISTOR MC 3041 TA1705 U028 2N744 1G21
Text: MILrS- 19500/273A NAVY 21 March 1566_ SUPERSEDING M IL-S-19500>^73(NAVY) 18 November 1063 (finn fi 9.\ v*“/ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR TYPE TYPE 2N744 i SCOPE 1.1 D escription. - This specification covers the .detail-requirem ents for an NPN, silicon, high-speed
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MILrS-19500/273A
MIL-S-19500/273
2N744
MIL-S-19500,
n627
AFAA TRANSISTOR
MC 3041
TA1705
U028
2N744
1G21
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Untitled
Abstract: No abstract text available
Text: EL2166C F e a tu r e s G e n e ra l D e sc r ip tio n • 110 M H z 3 d B b a n d w id th A y = + 2 • 115 M H z 3 d B b a n d w id th (A y = + 1 ) • 0.01% d iffe re n tia l g ain , R l = 500ft • 0.01° d iffe re n tia l p h ase, R l = 500H • L ow su p p ly c u rre n t, 7.5 m A
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EL2166C
500ft
2166C
EL2166C
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Untitled
Abstract: No abstract text available
Text: EL2260C/EL2460C Dual/Quad 130 MHz Current Feedback Amplifiers H GH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features General Description • 130 M H z 3 dB b andw idth Av = + 2 • 180 M H z 3 dB bandw idth (A v = + 1 ) • 0.01% differential gain, R l = 500ft
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EL2260C/EL2460C
500ft
EL2260C/EL2460C
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relais datenbuch siemens
Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Text: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8
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BRT12H
BRT12M
relais datenbuch siemens
siemens datenbuch
triac zu 103 ma
BSS97
diode sg 5 ts
Scans-048
BUZ23
s489
DSAGER00059
Transistor Datenbuch
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