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    BUZ 91 Price and Stock

    Carling Technologies V6B2SW0B-UZ400-0

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    Carling Technologies V1D1SW0B-UZE00-0

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    Carling Technologies V1DASW0B-UZD00-0

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    Carling Technologies V1D1SW0B-UZD00-0

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    Carling Technologies V1D2SW0B-UZL00-0

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    BUZ 91 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ91 Siemens SIPMOS Power Transistor(N Channel) Original PDF
    BUZ91 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ91 Infineon Technologies SIPMOS Power Transistor Scan PDF
    BUZ91 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ91A Unknown N-Channel MOSFET POWER TRANSISTOR 600V 8A TO-220AB Original PDF
    BUZ91A Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ91A Siemens Original PDF
    BUZ91A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ91A Infineon Technologies SIPMOS Power Transistor Scan PDF
    BUZ91A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BUZ 91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUZ 100SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS on Package Ordering Code BUZ 100SL-4 55 V 7.4 A 0.023 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings


    Original     		PDF 100SL-4 P-DSO-28 C67078-S. 01/Oct/1997

    transistor buz 350

    Abstract: BUZ 330 C67078-S1342-A3 buz 91 f
    Text: Not for new designs BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol


    Original     		PDF O-220 C67078-S1342-A3 transistor buz 350 BUZ 330 C67078-S1342-A3 buz 91 f

    buz111S

    Abstract: E3045 Q67040-S4003-A2 BUZ 32 SMD Q67040-S4003-A6
    Text: BUZ 111S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.008 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 80 A • dv/dt rated • 175˚C operating temperature


    Original     		PDF BUZ111S P-TO220-3-1 Q67040-S4003-A2 BUZ111S E3045A P-TO263-3-2 Q67040-S4003-A6 E3045 E3045 BUZ 32 SMD

    111SL

    Abstract: BUZ111SL smd JH transistor BUZ111SL Application Notes E3045 BUZ111SLE3045A
    Text: BUZ 111SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.007 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 80 A • Logic Level • dv/dt rated


    Original     		PDF 111SL BUZ111SL P-TO220-3-1 Q67040-S4002-A2 BUZ111SL E3045A P-TO263-3-2 Q67040-S4002-A6 E3045 111SL smd JH transistor BUZ111SL Application Notes E3045 BUZ111SLE3045A

    fip13

    Abstract: FIP-7 FIP20 fip11
    Text: UPD78P0208GF-3BA-H101 1/3 IL08 8-BIT SINGLE-CHIP MICROCOMPUTER 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 —TOP VIEW— 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 1 2 3 4 5 6 7 8 9 10 11 12


    Original     		PDF UPD78P0208GF-3BA-H101 P36/BUZ O1/P31 PORT10 PORT11 ANI0/P10 ANI7/P17 INTP0/TI0/P00 INTP3/P03 BUZ/P36 fip13 FIP-7 FIP20 fip11

    3528 pwm 20 PINS

    Abstract: 3528 ,pwm 20 PINS transistor buz 36 KS88C2064 KS88-SERIES 128-QFP-1420 DW 5255 bt 4336
    Text: KS88C2064 1 PRODUCT OVERVIEW PRODUCT OVERVIEW KS88-SERIES MICROCONTROLLERS Samsung’s KS88 series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mask-programmable ROM sizes. Important CPU features include:


    Original     		PDF KS88C2064 KS88-SERIES KS88C2064 128-pin 128-QFP-1420 3528 pwm 20 PINS 3528 ,pwm 20 PINS transistor buz 36 128-QFP-1420 DW 5255 bt 4336

    3528 pwm 20 PINS

    Abstract: 3528 ,pwm 20 PINS
    Text: KS88C2064 1 PRODUCT OVERVIEW PRODUCT OVERVIEW KS88-SERIES MICROCONTROLLERS Samsung’s KS88 series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mask-programmable ROM sizes. Important CPU features include:


    Original     		PDF KS88C2064 KS88-SERIES KS88C2064 128-pin 128-QFP-1420 3528 pwm 20 PINS 3528 ,pwm 20 PINS

    transistor buz 36

    Abstract: BUZ 81 KS57C21632 KS57P21632 SAM47
    Text: KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the KS57C21632 offers an


    Original     		PDF KS57C21632/P21632 KS57C21632 SAM47 up-to-896-dot 100-pin 0100B 1001B, transistor buz 36 BUZ 81 KS57P21632 SAM47

    transistor buz 36

    Abstract: S3C72G9 S3P72G9 SAM47
    Text: S3C72G9/P72G9 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C72G9 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the S3C72G9 offers an


    Original     		PDF S3C72G9/P72G9 S3C72G9 SAM47 up-to-896-dot 100-pin S3P72G9. S3P72G transistor buz 36 S3P72G9 SAM47

    SM1251

    Abstract: 74LS11 pin configuration BUZ 215 diagram
    Text: S3C7295/P7295 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7295 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-704-dot LCD direct drive capability, and flexible 8-bit timer/counter, the S3C7295 offers an


    Original     		PDF S3C7295/P7295 S3C7295 SAM47 up-to-704-dot 80-pin S3P7295. S3P7295 SM1251 74LS11 pin configuration BUZ 215 diagram

    Untitled

    Abstract: No abstract text available
    Text: UPD78P014YCW 1/3 IL22 * C-MOS 8-BIT SINGLE CHIP MICROCOMPUTER -TOP VIEW- P20/SI1 I/O 1 P21/SO1 I/O 2 P22/SCK1 I/O 3 62 P17/ANI7 I/O P23/STB I/O 4 61 P16/ANI6 I/O P24/BUSY I/O 5 60 P15/ANI5 I/O P25/SI0/SB0/SDA0 I/O 6 59 P14/ANI4 I/O P26/SO0/SB1/SDA1


    Original     		PDF UPD78P014YCW P20/SI1 P21/SO1 P22/SCK1 P17/ANI7 P23/STB P16/ANI6 P24/BUSY P15/ANI5 P25/SI0/SB0/SDA0

    calmRISC

    Abstract: s3fb018
    Text: S3CB018/FB018 1 PRODUCT OVERVIEW PRODUCT OVERVIEW CALMRISC OVERVIEW The S3CB018/FB018 single-chip CMOS microcontroller is designed for high performance using Samsung’s newest 8-bit CPU core, CalmRISC. CalmRISC is an 8-bit low power RISC microcontroller. Its basic architecture follows Harvard style, that is, it has


    Original     		PDF S3CB018/FB018 S3CB018/FB018 calmRISC s3fb018

    Untitled

    Abstract: No abstract text available
    Text: UPD78064GF-3BA 1/4 IL08 C-MOS 8-BIT SINGLE CHIP MICROCOMPUTER 51 55 60 GND 65 70 75 80 —TOP VIEW— 81 50 85 45 90 GND 40 A-VDD 95 31 30 25 20 15 5 1 100 10 VDD A-GND 35 UPD78064GF-3BA (2/4) PIN No. I/O SIGNAL 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


    Original     		PDF UPD78064GF-3BA P26/SO0/SB1 P27/SCK0 P70/SI2/RXD P71/SO2/TXD P72/SCK2/ASCK P07/XT1 P00/INTP0/TIO0 P01/INTP1/TIO1

    Untitled

    Abstract: No abstract text available
    Text: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set KS57C2916/P2916 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C2916 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


    Original     		PDF SAM47 KS57C2916/P2916 KS57C2916 SAM47 up-to-704-dot 80-pin KS57C291 SEG11

    DIODE S4 74

    Abstract: s4 74 g1
    Text: SIEMENS BUZ 100SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 100SL-4 55 V 7.4 A ffDS on Package Ordering Code 0.023 £1 P-DSO-28 C67078-S. . . . . . .


    OCR Scan     		PDF 100SL-4 VPS05123 100SL-4 P-DSO-28 C67078-S. DIODE S4 74 s4 74 g1

    FDS 4800

    Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
    Text: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level


    OCR Scan     		PDF 111SL BUZ111SL P-T0220-3-1 Q67040-S4002-A2 E3045A P-T0263-3-2 Q67040-S4002-A6 E3045 FDS 4800 smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457

    z58 diode

    Abstract: No abstract text available
    Text: fcTT &3D D • ÖS3Sfc.GS OGlMbVa 2 M S I E G 88D 14678 — D BUZ 58 SIEMENS AK TI EN 6E SE LLSCH AF- Main ratings N-Channel = 1000 V Draln-source voltage ^DS = 4,2 A Continuous drain current h Draln-source on-resistance ^DS on = 2,0 n Description SIPMOS, N-channel, enhancement mode


    OCR Scan     		PDF C67078-A1607-A2 as35bos G--03 fl235bQ5 0014bfl3 z58 diode

    KDS 9E

    Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
    Text: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter


    OCR Scan     		PDF O-220 C67078-S1302-A2 SIL03609 SILQ3610 SIL03611 SIL03612 KDS 9E l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    relais datenbuch siemens

    Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
    Text: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8


    OCR Scan     		PDF BRT12H BRT12M relais datenbuch siemens siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch

    irfp 950

    Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
    Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6


    OCR Scan     		PDF SGS35MA050D1 TSD4M450V MTP3N60 MTP3N60FI MTH6N60FI MTP6N60 STHV82 STHV102 TSD5MG40V STHI07N50FI irfp 950 SGSP479 transistor BUZ45 SGSP369 BUZ74 IRFP 740 IRF 950 SGSP239

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    TRANSISTOR SMD MARKING CODE B7t

    Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
    Text: in tP ro BUZ104S tv e d * SIPMOS Power Transistor Product Summary Features « N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS V 55 ^DS on 0.08 ii b 13.5 A • du/df rated


    OCR Scan     		PDF BUZ104S BU2104S P-T0220-3-1 Q67040-S4007-A2 BUZ104S E3045A P-T0263-3-2 Q67040-S4007-A6 E3045 TRANSISTOR SMD MARKING CODE B7t transistor marking b7t transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t smd transistor marking JR marking b7t D1337

    Untitled

    Abstract: No abstract text available
    Text: i l S E M E L A B 37E D L T D 0133187 DDGGSbT 2 • SC 1LB T - 3 9 - 1 1 SEMELAB ul wü - ‘. i. O c^ i o Ci 7 1 : ^ S J tr BUZ71 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm 10. 3 _ max. ¿.5mai 1.3 5.9 2.8 min. f ■t 15.8 APPLICATIONS


    OCR Scan     		PDF BUZ71