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    BUY 1A 60V PNP Search Results

    BUY 1A 60V PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    25LS2518PC Rochester Electronics LLC Replacement for AMD part number AM25LS2518PC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74LS491ANS Rochester Electronics LLC Replacement for AMD part number SN74LS491ANS. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    9519A-1JC Rochester Electronics LLC Replacement for AMD part number AM9519A-1JC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    2147-55/BYA Rochester Electronics LLC Replacement for AMD part number AM2147-55/BYA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    BUY 1A 60V PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


    Original     		PDF BD240/A/B/C BD239/A/B/C O-220 BD240 BD240A BD240B BD240C

    Untitled

    Abstract: No abstract text available
    Text: KSB794/795 KSB794/795 Audio Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter


    Original     		PDF KSB794/795 O-126 KSB794 KSB795 PW300 Cycle10% KSB795OSTU

    Untitled

    Abstract: No abstract text available
    Text: KSB794/795 KSB794/795 Audio Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter


    Original     		PDF KSB794/795 O-126 KSB794 KSB795 KSB794OSTU /new/html/KSB794

    OF TRANSISTOR AT 30B

    Abstract: No abstract text available
    Text: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C O-220 TIP30 TIP30A TIP30B TIP30C OF TRANSISTOR AT 30B

    TRANSISTOR MARKING 1d9

    Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


    Original     		PDF FMMT591 500mW FMMT491 FMMT591TA D-81541

    FMMT591TA

    Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


    Original     		PDF FMMT591 500mW FMMT491 FMMT591TA D-81541 FMMT591TA design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp

    ZXTP19060CG

    Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
    Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA

    ZXTN19060CZ

    Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
    Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor


    Original     		PDF ZXTP19060CZ -80mV ZXTN19060CZ ZXTP19060CZTA D-81541 ZXTN19060CZ TS16949 ZXTP19060CZ ZXTP19060CZTA

    fast switching pnp transistor 3A 60V

    Abstract: bd241 BD242
    Text: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


    Original     		PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C fast switching pnp transistor 3A 60V bd241 BD242

    "PNP Transistor"

    Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
    Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZX5T951Z "PNP Transistor" design ideas TS16949 ZX5T951Z ZX5T951ZTA

    Untitled

    Abstract: No abstract text available
    Text: TIP32 Series TIP32/32A/32B/32C TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF TIP32 TIP32/32A/32B/32C) TIP31/31A/31B/31C O-220 TIP32 TIP32A TIP32B TIP32C

    transistor BD 325

    Abstract: No abstract text available
    Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD234/236/238 O-126 BD234 BD236 BD238 transistor BD 325

    BD376

    Abstract: TO-126 fairchild BD375 BD37810STU
    Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BD376/378/380 BD375, BD377 BD379 BD376 BD378 BD380 O-126 BD376 TO-126 fairchild BD375 BD37810STU

    TRANSISTOR MARKING 1d9

    Abstract: TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA

    ZXTN2

    Abstract: No abstract text available
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 ZXTN2

    TS16949

    Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 TS16949 ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP2027F -100V, ZXTN2018F D-81541

    TS16949

    Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP2027F -100V, ZXTN2018F D-81541 TS16949 ZXTN2018F ZXTP2027F ZXTP2027FTA

    Untitled

    Abstract: No abstract text available
    Text: BDW24/A/B/C BDW24/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW23, BDW23A, BDW23B and BDW23C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BDW24/A/B/C BDW23, BDW23A, BDW23B BDW23C O-220 BDW24 BDW24A BDW24B

    KSB1116

    Abstract: No abstract text available
    Text: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSB1116/1116A KSD1616/1616A KSB1116 KSB1116A KSB1116A PW10ms, Cycle50% KSB1116

    Untitled

    Abstract: No abstract text available
    Text: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSB1116/1116A KSD1616/1616A KSB1116 KSB1116A KSB1116A PW10ms, Cycle50%

    Untitled

    Abstract: No abstract text available
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD176/178/180 O-126 BD176 BD178 BD180 BD180