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    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    sf 818 d

    Abstract: NPN 337 SU 179 sf 819 d SF 127 Funkamateur SMD NF sf 118 d sd 339 NF 847 G
    Text: IC, ICsat [mA, A ] 600 -100 -100 -100 -100 100 100 100 100 100 100 -100 -100 -100 100 100 100 -100 -100 -100 (1) (-1) (1) (-1) (1) (-1) (3) (1,5) (-1,5) (1,5) (-1,5) (1,5) (-1,5) * [MHz] ≥ 250 90 90 90 90 ≥ 300 ≥ 300 145 145 161 175 350 350 350 185


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    CI 13007

    Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
    Text: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA


    OCR Scan     		PDF ST24C02 TS59C11 TS93C46 M9306 M9346 CI 13007 bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


    OCR Scan     		PDF SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369

    BU406

    Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors
    Text: TEXAS I N S T R -COPTO} ÔÔ61726 TEXAS ta INSTR DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS - T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 ° C Case Temperature


    OCR Scan     		PDF GG3bb35 BU406, BU407 110-Degree to-220ab BU406 BU407 300fis, 003bb3T N-P-N SILICON POWER TRANSISTORS t317 texas transistors

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    BUX83

    Abstract: BUX82 gg3b
    Text: TEX AS INSTR {OPTO} “§ 9 6 1 7 2 6 TEXAS b2 IN STR » riflT h lT E b 62C O P T O QG3bbb3 36663 B IIY Q 3 RI IY Q Q N-P-N SILICON POWER TRANSISTORS O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 60 W at 5 0 ° C C ase Temperature 6 A Continuous Collector Current


    OCR Scan     		PDF BUX82 BUX83 BUX83 gg3b

    BUX47A

    Abstract: BUX47 BUX47B BY205-400
    Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current


    OCR Scan     		PDF 003bb41 BUX47, BUX47A, BUX47B BUX47 BUX47A BY205-400

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    BUX47A

    Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
    Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current


    OCR Scan     		PDF tbl75b BUX47, BUX47A, BUX47B bux47a 1ux47b BUX47 t-35-/s BUX47A BY205-400 silicon power transistors T35 ET

    Untitled

    Abstract: No abstract text available
    Text: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current


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    BDX 625

    Abstract: BUX 115 BD 896 898A D896 BD PNP BD900 BD902
    Text: TE XA S IN S T R -COPTO} ~k2 QQBLbOS A i 62C 36605 BD896, BD896A,BD898, BD898A, BD900, BD900A, BD902 P-N-P SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 ' " . V — 70 W a t 2 5 ° C Case Temperature T -3 3 -3 1 8 A Continuous Collector Current Min Hf E of 7 5 0 at 3 A or 4 A


    OCR Scan     		PDF BD896, BD896A BD898, BD898A, BD900, BD900A, BD902 T0-22Q BD896 BDX 625 BUX 115 BD 896 898A D896 BD PNP BD900

    D895

    Abstract: BD 895 bdw 34 a
    Text: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current


    OCR Scan     		PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 -220AB BD895 D895 BD 895 bdw 34 a

    BD898

    Abstract: BD900 BD902 BD896 BD896A BD898A BD900A 7150A 562C
    Text: TEXAS IN STR - COP TOJ DDBLbDS 62C 36605 BD896, BD896A,BD898, BD898A, BD900, BD900A, BD902 P-N-P SILICON POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 ' " > • 70 W a t 2 5 ° C Case Temperature • 8 A Continuous Collector Current T -3 3 -3 1 •


    OCR Scan     		PDF BD896, BD896A BD898, BD898A, BD900, BD900A, BD902 T-33-31 O-22QAB BD896 BD898 BD900 BD898A BD900A 7150A 562C

    BU 450 bdx

    Abstract: l75b
    Text: TEXAS INSTR Î0PTÔ3D F f lT b l7 5 b Ö 9 6 1 7 2 6 T EX A S IN S T R <OPTO) 0 0 3 ^ ^ 62C 3 6 6 6 9 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS T NOVEMBER 1983 - REVISED OCTOBER 1984 4 0 W at 2 5 ° C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current


    OCR Scan     		PDF BUX84, BUX85 T0-22QAB hti73 T-33-// BU 450 bdx l75b

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    X53A

    Abstract: BDX63A
    Text: texas~ instr -c o p t o j bs dF | 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current


    OCR Scan     		PDF T-33-29_ BDX53, BDX53A, BDX53B, BDX53C X53A BDX63A

    T726

    Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
    Text: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature


    OCR Scan     		PDF T-33-29 BDX53, BDX53A, BDX53B, BDX53C T0-220AB BDX63 BDX63A BDX53B BDX53C T726 1N914 BDX53 BDX53A 60si50 ION-M

    UAA4002

    Abstract: UAA 4002 buv 48 SOA bux DIODE
    Text: V - ’ M fJV - J oj - L 1- - UM 'j \ -'J-1 - V u A designer using switching transistors needs an an­ swer to the follow ing questions: What are the current sharing requirements between paralleled transistors? W hat base current is necessary if the transistor is


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    BU 450 bdx

    Abstract: bux81
    Text: TEXAS INSTR COPTO} b5 DFIflTblTab 003bbS7 □ 62C 8 9 6 1 7 2 6 TEXAS INSTR < Ö P T Ü 7 3Ò 657 BUX80 BUX81 N-P-N SILICON POWER TRANSISTORS / ~ J 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C C ase Temperature 10 A Continuous Collector Current


    OCR Scan     		PDF 003bbS7 BUX80 BUX81 T-33-/3 BU 450 bdx

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    BDX54

    Abstract: BDX54A BDX54B BDX54C BDX54 circuit
    Text: TEXAS IN STR -COPTO} t.B r D E jflT b ^ E b DOatibEB _ S 9 6 1 T 2 6 TEX A S IN S T R O P T Ò T T-33-31 62C 3 6 6 2 3 D BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 • 60 W at 25°C Case Temperature


    OCR Scan     		PDF 8T726-TEXÃ T-33-31 BDX54, BDX54A, BDX54B, BDX54C T0-220AB BDX54 BDX54A BDX54B BDX54 circuit