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    BUW11 TRANSISTOR Search Results

    BUW11 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BUW11 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUW11

    Abstract: BUW11A BUW11AF BUW11F
    Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A DESCRIPTION ・With TO-3PN package ・High voltage ;high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING See Fig.2


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    PDF BUW11 BUW11A BUW11 BUW11F BUW11AF BUW11A BUW11AF BUW11F

    BUW11

    Abstract: BUW11A BUW11AF BUW11F
    Text: SavantIC Semiconductor Product Specification BUW11 BUW11A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING See Fig.2 PIN


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    PDF BUW11 BUW11A BUW11 BUW11AF BUW11F BUW11A BUW11AF BUW11F

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


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    PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11 AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. o APPLICATIONS _ o • Converters • Inverters • Switching regulators


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    PDF OT429 BUW11W; BUW11 OT429) BUW11W BUW11AW

    BUW11

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bb53= 31 0026515 165 b'lE D APX BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


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    PDF BUW11 BUW11A BUW11

    BUW11A

    Abstract: d777b BUW11 transistor BU 102
    Text: Product specification Philips Semiconductors BUW11; BUW11A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


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    PDF BUW11; BUW11A BUW11 7110fl5b GD777b8 BUW11A d777b transistor BU 102

    lem lt 100 p

    Abstract: BUW11A BUW11 lem 50 p
    Text: Product specification Philips Semiconductors Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m oto r control systems etc.


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    PDF BUW11 BUW11A BUW11 711062b 00777bfl lem lt 100 p BUW11A lem 50 p

    BUW11

    Abstract: BUW11A buw11 transistor philips rf transistors buw111
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.


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    PDF BUW11; BUW11A S0T93 BUW11 711002b 0777b? BUW11A buw11 transistor philips rf transistors buw111

    2051B

    Abstract: BUW11 SII-020 BUW11A IEC134
    Text: N AMER PHILI P S / D I S C R E T E b'iE D • Jl bb53= 31 0020515 165 H A P X BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn po w er transistors in a S O T 9 3 envelope, intended fo r use in converters, inverters, switching regulators, m o to r co ntrol systems etc.


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    PDF BUW11 BUW11A 7Z82933 2051B SII-020 BUW11A IEC134

    EAKD

    Abstract: BUW12A
    Text: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc­


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    PDF C0NTH01UNG O-218AC EAKD BUW12A

    g5643

    Abstract: G 5643 transistor B 1184 BUW11A
    Text: s G S-T HOMSON 07E D J 67 C TESTES? ÔOlTEOb S j 15108 D MULTIEPITAXIAL MESA NPW A D V A N C E DATA HIGH VO LTA G E POWER SWITCH The BUW 11 and BUW 11A are silicon multiepitaxial mesa NPN transistor in SO T-93 plastic package, particularly intended for switching applications


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    PDF BUW11 BUW11A O0172 g5643 G 5643 transistor B 1184 BUW11A

    ZB1702

    Abstract: BUW11AF BUW11F ZB1-7 ScansUX40
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.


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    PDF BUW11F; BUW11AF BUW11F 711062b QG77773 ZB1702 711Dfi2b ZB1-7 ScansUX40

    BUW11AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT 199 package. o APPLICATIONS nn • Converters • Inverters • Switching regulators


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    PDF BUW11F; BUW11AF 8B008 OT199) BUW11F BUW11AF

    diode 1000V 10a

    Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
    Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A


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    PDF O-220AB O-220AB 750ns BU407 BUV28 BUV28A BUV27 BUV27A diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV

    BUT13P

    Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
    Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20


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    PDF GG004S4 BUS13 15min BUS13A BUS14A BUS50 20min BUS51 BUT13P BLN20 BUT14 SOT93 BUV62 BUV24 BUV41 but72

    BUW11F

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a S O U 99 package. o APPLICATIONS • Converters 2 • Inverters nn • Switching regulators


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    PDF USB012 BUW11F; BUW11AF BUW11F BUW11AF

    ESM40

    Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v
    Text: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE *C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(*at) MAX. a t lc ff MAX a t lc


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    PDF bk53i31 QCUb220 T-32-OI BU826 OT-93 BU826A BUV90 BUV90F OT-199 ESM40 BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v

    diode 400V 4A

    Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
    Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A


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    PDF BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A

    BUS11A PHILIPS SEMICONDUCTOR

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV


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    PDF Q01b22Q 32-0t OT-93 BUV90 BUV90F OT-199 ESM3045AV 3045DV ESM4045AV BUS11A PHILIPS SEMICONDUCTOR

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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