Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUV298V Search Results

    SF Impression Pixel

    BUV298V Price and Stock

    STMicroelectronics BUV298V

    TRANS NPN 450V 50A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUV298V Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    BUV298V Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUV298V STMicroelectronics NPN transistor power module Original PDF
    BUV298V STMicroelectronics NPN Transistor Power Module Original PDF
    BUV298V STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298V Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV298V Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV298V Philips Semiconductors High Speed, High Voltage Transistors Scan PDF
    BUV298V STMicroelectronics NPN Power Transistor Module Scan PDF

    BUV298V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schematic diagram motor control

    Abstract: schematic diagram motor BUV298V JESD97
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original
    PDF BUV298V 2002/93/EC schematic diagram motor control schematic diagram motor BUV298V JESD97

    BUV298V

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:


    Original
    PDF BUV298V BUV298V

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original
    PDF BUV298V 2002/93/EC

    welding equipment smps schematic

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original
    PDF BUV298V welding equipment smps schematic

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original
    PDF BUV298V 2002/93/EC 200ot

    BUV298V

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE


    Original
    PDF BUV298V BUV298V

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


    Original
    PDF O-264 HD1530JL* HD1750JL* O-220 OT-223 O-220FP OT23-6L O-126 O-220FH ISOWATT218 fw26025 FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


    Original
    PDF 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI

    STE38NA50

    Abstract: STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV
    Text: TRANSISTORS POWER MODULES BIPOLAR IN ISOTOP For other conf. Conf. D A B A D B D D D D D D A A A C A C C B VCEO VCEV IC Ptot VCE sat @ IC / IB (V) (V) (A) (W) (V) (A) 125 125 125 300 300 300 300 450 450 450 450 450 450 450 450 450 450 450 450 450 150 200


    Original
    PDF STE250N06 STE180N10 STE150N10 STE100N20 STE90N25 STE50N40 STE53NA50 STE47N50 STE45N50 STE38NA50 STE38NA50 STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    BUW52I

    Abstract: BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A
    Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION VCEO VCBO IC Ptot Resistive Switching Typical application Package Type V BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BU508D BU208A BU208D BUH615D THD215HI BUH1015HI


    Original
    PDF BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BUW52I BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A

    ST1803DFP

    Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
    Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D


    Original
    PDF OT-32 O-126 BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 ST1803DFP BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON û iRâmi©IFlis iû êS BUV298V NPN TRANSISTOR POWER MODULE . NPN TRANSISTOR . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) • EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan
    PDF BUV298V 048JO

    Untitled

    Abstract: No abstract text available
    Text: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan
    PDF BUV298V

    IC SO5

    Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
    Text: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS


    OCR Scan
    PDF JUV298F BUV298V BUV298V BUV298F SC04S30 T-91-20 O-240) IC SO5 FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F JUV298F transistor BC 583

    Untitled

    Abstract: No abstract text available
    Text: r = 7 ^ 7 S G S -T H O M S O N R m o ra « # BUV298V NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan
    PDF BUV298V

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE t.'lE D bbS3T31 DD2fl51E 47b H A P X BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supply.


    OCR Scan
    PDF bbS3T31 DD2fl51E BUV298 BUV298A

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan
    PDF

    BUX98PI

    Abstract: ESM2012DV BUX98P ESM2030DV D45HS mj2955 TO-220 ESM2030 buw90
    Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE {V Vc-ao VcES VcEV V) 450 450 450 450 450 60 80 125 90 125 125 250 200 250 125 400 450 700 400 450 400 450 450 700 450 450 450 450 200 400 60 80 45 60 ao 1000 1000 1000 850 1000 120 160 250 160 250 160 300 250 300


    OCR Scan
    PDF BUV98AV BUV98V BUV298AV BUV298V BUW12A BUW48 BUW49 BUW50 BUW89 BUW90 BUX98PI ESM2012DV BUX98P ESM2030DV D45HS mj2955 TO-220 ESM2030

    buw13a philips semiconductor

    Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
    Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A


    OCR Scan
    PDF S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A


    OCR Scan
    PDF 180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F

    SOT-227A

    Abstract: BUV298 BUV298A BUV298AV BUV298V
    Text: PHILIPS INTERNATIONAL HSE D Q 711002b 0031137 3 Q PHIN BUV298 V BU V298A(V) ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.


    OCR Scan
    PDF 711002b BUV298 BUV298A SOT-227A BUV298AV BUV298V