bup 313
Abstract: Q67040-A4208-A2
Text: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 313 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings
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O-218
Q67040-A4208-A2
Dec-19-1995
bup 313
Q67040-A4208-A2
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bup313d
Abstract: No abstract text available
Text: Infineon BUP 313D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 313D 1200V 32A Pin 3 C E Package
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O-218
Q67040-A4228
Dec-02-1996
bup313d
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Q67040-A4228-A2
Abstract: No abstract text available
Text: BUP 313D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 313D 1200V 32A Pin 3 C E Package Ordering Code
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O-218
Q67040-A4228-A2
Dec-02-1996
Q67040-A4228-A2
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bup 313
Abstract: Q67040-A4208-A2 bup313
Text: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 313 1200V 32A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings
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O-218
Q67040-A4208-A2
Jul-30-1996
bup 313
Q67040-A4208-A2
bup313
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BUP 313 D
Abstract: No abstract text available
Text: BUP 313 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 313 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67040-A4208 Maximum Ratings
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O-218
Q67040-A4208
Dec-19-1995
BUP 313 D
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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O-220
O-218
346S2
BUO-218
buz 342 G
DIODE BUZ
z347
BUP 312
diode z104
z349
z332a
IGBT P213
DIODE BUZ 300
buz91a
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buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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O-220
O-218
buz 350 equivalent
BUP 203
transistor buz 36
BUP 312
BUP 304
leistungstransistoren
bup 401 datasheet
transistor buz 350
bup 213
BUP 309
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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BUP 312
Abstract: bup 313 BUP 312 drawing m4 12h CM75TF-12H
Text: CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 75 Amperes/600 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P
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CM75TF-12H
Amperes/600
BUP 312
bup 313
BUP 312 drawing
m4 12h
CM75TF-12H
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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B192-H6780-G10-X-7600
SP000012954
SP000013610
SP000017969
SP000014627
SP000018085
SP000018086
PEF 24628
PSB 21493
siemens PMB 6610
47n60c3
psb 21553
Pmb7725
PEF 22628
PMB6610
psb 50505
PMB 6819
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S5 100 B112 MT RELAY
Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1
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VAT300
VAT300,
ST-3450C
E-08225
D-50677
F-93601
I-20092
B-9000
C/4566/E
S5 100 B112 MT RELAY
AMP A047 CONNECTOR
VAT300
relay S5 100 B112
transistor b605
A 92 B331 transistor
S5 100 B112 RELAY
9F52
transistor b686
A 42 B331 transistor
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ERN 1387
Abstract: heidenhain encoder ern 1387 U20N1K5S PLC S7 200 use encoder U20N0K7S U20N0K2S VAT200 U20X0K7S ACRP10A2H U20N0K4S
Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical
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VAT20,
VAT200,
VAT300
VAT20
VAT200
H-1340
B-9000
C/4601/E/EX
ERN 1387
heidenhain encoder ern 1387
U20N1K5S
PLC S7 200 use encoder
U20N0K7S
U20N0K2S
U20X0K7S
ACRP10A2H
U20N0K4S
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ic A2611
Abstract: a2611 A2631 a2610 a2633 s2s65a00 A2624 18vdc power supply Epson EPD controller A2651
Text: S2S65A00 Technical Manual Rev.1.2 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material
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S2S65A00
ic A2611
a2611
A2631
a2610
a2633
A2624
18vdc power supply
Epson EPD controller
A2651
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P 313D
Abstract: BUP313D
Text: SIEMENS BUP 313D IGBT W ith Antlparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type VfcE h 1200V 32A BUP 313D P in i Pin 2 Pin 3 G C E Package
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O-218
Q67040-A4228-A2
-55tances
P 313D
BUP313D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 400D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 400D yCE 600V h 22A C Pin 3 E Package Ordering Code
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O-220
Q67040-A4423-A2
fi335bOS
S35b05
235bD5
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BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
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BUP200D
BUP314D
BUP410D
Q67078-A4400-A2
Q67040-A4420-A2
Q67078-A4401-A2
Q67078-A4402-A2
Q67040-A4407-A2
Q67078-A4203-A2
Q67078-A4205-A2
BUP 312
BUZ22
276 603d
BUZ 81
bup300
buz171
BUZ,350
BUZ,271
BUZ90A
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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BUP33
Abstract: DDD0131 LE17
Text: S EMELAB LT D 37E D 0133107 0D0013G M • SMLB ' :£SEIV9EL.AE3 <^ V ' ~ BUP33 SILICON PNP EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm FEATURES 2k • VERY LOW SATURATION RESISTANCE 21 mai • HIGH GAIN AT HIGH CURRENT 12.7 max. • VERY FAST SWITCHING
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0D0013G
BUP33
55to150Â
T-33-21
BUP33
DDD0131
LE17
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Untitled
Abstract: No abstract text available
Text: S EMELAB LT D 37E D 0133107 0D0013G M • SMLB ' :£SEIV9EL.AE3 <^ V ' ~ BUP33 SILICON PNP EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm FEATURES 2k • VERY LOW SATURATION RESISTANCE 21 mai • HIGH GAIN AT HIGH CURRENT 12.7 max. • VERY FAST SWITCHING
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0D0013G
BUP33
s250C
--60W
--55to150
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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BdP 285
Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Text: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa
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C12es
C12ss
BFI67,
T0220
BF245
BF240-1,
BF440-I
05-QJÂ
T0126
BFR30R-3IR
BdP 285
bdp 286
BDP286
BDP285
BUCP-52
BDP396
BDP 284
BP469
BC-148
BDP495
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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bzp 650 c10
Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
Text: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .
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NTCI11
TC212
NTC220
NTC22I
NTC220
NTC50I
bzp 650 c10
bzp 650 c12
BDP286
C9VI 5t
BZP 630 C9V1
bdp 286
BDP 284
BdP 285
BDP 283
BZP 630 C24
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