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    BUJ30 Price and Stock

    Rochester Electronics LLC BUJ302A,127

    NOW WEEN - BUJ302A - POWER BIPOL
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    DigiKey BUJ302A,127 Bulk 13,825 944
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    WeEn Semiconductor Co Ltd BUJ302AD,118

    TRANS NPN 400V 4A DPAK
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    DigiKey BUJ302AD,118 Reel 7,500 2,500
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    BUJ302AD,118 Cut Tape 3,515 1
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    BUJ302AD,118 Digi-Reel 1
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    Mouser Electronics BUJ302AD,118 5,085
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    Arrow Electronics BUJ302AD,118 110,000 8 Weeks 2,500
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    New Advantage Corporation BUJ302AD,118 30,000 1
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    Rochester Electronics LLC BUJ303B,127

    NOW WEEN - BUJ303B - POWER BIPOL
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    DigiKey BUJ303B,127 Bulk 5,278 859
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    WeEn Semiconductor Co Ltd BUJ303A,127

    TRANS NPN 500V 5A TO220AB
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    DigiKey BUJ303A,127 Tube 4,799 1
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    Mouser Electronics BUJ303A,127 4,704
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    TME BUJ303A,127 540 1
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    New Advantage Corporation BUJ303A,127 4,000 1
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    WeEn Semiconductor Co Ltd BUJ302AX,127

    TRANS NPN 400V 4A TO220F
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    DigiKey BUJ302AX,127 Tube 2,164 1
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    Mouser Electronics BUJ302AX,127 2,066
    • 1 $0.78
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    TME BUJ302AX,127 1
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    BUJ30 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUJ301A Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BUJ301AX Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BUJ302 Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BUJ302A NXP Semiconductors NPN power transistor Original PDF
    BUJ302A Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BUJ302A,127 NXP Semiconductors BUJ302A - NPN power transistor, SOT78 Package, Standard Marking, Horizontal, Rail Pack Original PDF
    BUJ302AD NXP Semiconductors NPN power transistor Original PDF
    BUJ302AD,118 NXP Semiconductors BUJ302AD - NPN power transistor, SOT428 Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BUJ302AX Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BUJ302AX,127 NXP Semiconductors BUJ302AX - NPN power transistor, SOT186A Package, Standard Marking, Horizontal, Rail Pack Original PDF
    BUJ303A NXP Semiconductors BUJ303 - TRANSISTOR 5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC PACKAGE-3, BIP General Purpose Power Original PDF
    BUJ303A NXP Semiconductors NXP high voltage power bipolar transistors BUJ & PHx series Original PDF
    BUJ303A NXP Semiconductors Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast Original PDF
    BUJ303A Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BUJ303A,127 NXP Semiconductors Silicon Diffused Power Transistor - IC (DC): 5 A; IC (SAT): 3 A; tf(max): 0.145s; VCESM: 1000 V; Package: week 1, 2005 Original PDF
    BUJ303A,127 NXP Semiconductors BUJ303 - TRANSISTOR 5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC PACKAGE-3, BIP General Purpose Power Original PDF
    BUJ303AD NXP Semiconductors NPN power transistor Original PDF
    BUJ303AD,118 NXP Semiconductors BUJ303AD - NPN power transistor, SOT428 Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BUJ303AX NXP Semiconductors NPN power transistor Original PDF
    BUJ303AX Philips Semiconductors Silicon Diffused Power Transistor Original PDF

    BUJ30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits


    Original
    PDF BUJ302AD OT428

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original
    PDF BUJ303B BUJ303B O220AB

    Untitled

    Abstract: No abstract text available
    Text: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303CD OT428 Condition10

    curve tracer specifications

    Abstract: No abstract text available
    Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303A O-220AB) curve tracer specifications

    BUJ303B

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original
    PDF BUJ303B O220AB BUJ303B

    BUJ303AX

    Abstract: No abstract text available
    Text: TO -2 20F BUJ303AX NPN power transistor Rev. 05 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303AX OT186A O220F) BUJ303AX

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F BUJ302AX NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A TO-220F plastic package. 1.2 Features and benefits


    Original
    PDF BUJ302AX OT186A O-220F)

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F BUJ303AX NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303AX OT186A O220F)

    BUJ302AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original
    PDF BUJ302AX BUJ302AX

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUJ302A NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original
    PDF BUJ302A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303AD OT428

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F BUJ303AX NPN power transistor Rev. 4 — 15 April 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303AX OT186A O220F)

    power electronic transistor

    Abstract: No abstract text available
    Text: TO -22 0A B BUJ303A NPN power transistor Rev. 04 — 14 April 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original
    PDF BUJ303A O-220AB) power electronic transistor

    BUJ302AD

    Abstract: No abstract text available
    Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits


    Original
    PDF BUJ302AD OT428 BUJ302AD

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original
    PDF BUJ304AX

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    OCR Scan
    PDF BUJ303AX 25-CSemiconductors 200\lH

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in a plastic fu ll-p a ck envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor


    OCR Scan
    PDF BUJ304AX

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    OCR Scan
    PDF BUJ303AX

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    OCR Scan
    PDF BUJ303AX

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    OCR Scan
    PDF BUJ304A T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302A GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control


    OCR Scan
    PDF BUJ302A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    OCR Scan
    PDF BUJ301A T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control


    OCR Scan
    PDF BUJ301A