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GT30J110SRA
|
|
Toshiba Electronic Devices & Storage Corporation
|
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
|
|
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GT30N135SRA
|
|
Toshiba Electronic Devices & Storage Corporation
|
IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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GT30J65MRB
|
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Toshiba Electronic Devices & Storage Corporation
|
IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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TLIN1024ARGYRQ1
|
|
Texas Instruments
|
Automotive, quad local interconnect network (LIN) transceiver with dominant state timeout 24-VQFN -40 to 125 |
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TLIN1024RGYTQ1
|
|
Texas Instruments
|
Quad LIN Transceiver 24-VQFN -40 to 125 |
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