BU4506AF
Abstract: BU4506DF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AF
BU4506AF
BU4506DF
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BU4506DF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
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BU4506DZ
BU4506DF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
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BU4506DZ
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4506DX
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bu4506dx
Abstract: BU4506DF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features
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BU4506DX
bu4506dx
BU4506DF
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BU4506AZ
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AZ
BU4506AZ
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BU4506AX
Abstract: BU4506DF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AX
BU4506AX
BU4506DF
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BU4506AF
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AF
BU4506AF
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BU4506DF
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features
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BU4506DF
BU4506DF
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bu4506df
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features
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Original
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BU4506DF
bu4506df
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BU4506AX
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AX
BU4506AX
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BUT11APX equivalent
Abstract: diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF
Text: Bipolar power diodes and transistors for TV Understanding PFC - TV applications What is Power Factor Correction PFC Ñ It can be defined as the reduction of the harmonic content, and/or the aligning of the phase angle of incoming current Ñ PFC is required to reduce disturbance on the AC distribution
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bra785
IEC1000-3-2/EN61000-3-2
80plus
JICC61000-3-2
BUT11APX equivalent
diode BY229
BUT11APX
BU4508DX
plasma tv ic
BU2720DX
BUT11APX-1200
BU4507DX
BU4508DX equivalent
BU2520DF
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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BU4506DF
Abstract: BU4506D
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith integrated diode in a plastic fu ll-p a ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features
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BU4506DF
BU4506DF
BU4506D
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BU4506AF
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AF
BU4506AF
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Untitled
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU4506DX
16kHz
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope w ith integrated d am per diode intended fo r use in horizontal deflection circuits of colour television
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BU4506DZ
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BU4506AZ
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AZ
BU4506AZ
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BU4506DF
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features
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OCR Scan
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BU4506DF
16kHz
BU4506DF
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BU4506AF
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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OCR Scan
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PDF
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BU4506AF
BU4506AF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
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OCR Scan
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PDF
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BU4506DZ
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4506DX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith integrated diode in a plastic fu ll-p a ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features
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OCR Scan
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BU4506DX
4506DX
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BU4506AZ
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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OCR Scan
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PDF
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BU4506AZ
BU4506AZ
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BU4506AX
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AX
BU4506AX
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