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    BU4506 Search Results

    BU4506 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BU4506 Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BU4506AF Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BU4506AX Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BU4506AZ Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BU4506DF Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BU4506DX Philips Semiconductors Silicon Diffused Power Transistor Original PDF
    BU4506DZ Philips Semiconductors Silicon Diffused Power Transistor Original PDF

    BU4506 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BU4506AF

    Abstract: BU4506DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional


    Original
    BU4506AF BU4506AF BU4506DF PDF

    BU4506DF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television


    Original
    BU4506DZ BU4506DF PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television


    Original
    BU4506DZ PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television


    Original
    BU4506DX PDF

    bu4506dx

    Abstract: BU4506DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features


    Original
    BU4506DX bu4506dx BU4506DF PDF

    BU4506AZ

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional


    Original
    BU4506AZ BU4506AZ PDF

    BU4506AX

    Abstract: BU4506DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional


    Original
    BU4506AX BU4506AX BU4506DF PDF

    BU4506AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional


    Original
    BU4506AF BU4506AF PDF

    BU4506DF

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features


    Original
    BU4506DF BU4506DF PDF

    bu4506df

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features


    Original
    BU4506DF bu4506df PDF

    BU4506AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional


    Original
    BU4506AX BU4506AX PDF

    BUT11APX equivalent

    Abstract: diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF
    Text: Bipolar power diodes and transistors for TV Understanding PFC - TV applications What is Power Factor Correction PFC Ñ It can be defined as the reduction of the harmonic content, and/or the aligning of the phase angle of incoming current Ñ PFC is required to reduce disturbance on the AC distribution


    Original
    bra785 IEC1000-3-2/EN61000-3-2 80plus JICC61000-3-2 BUT11APX equivalent diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original
    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    BU4506DF

    Abstract: BU4506D
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith integrated diode in a plastic fu ll-p a ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features


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    BU4506DF BU4506DF BU4506D PDF

    BU4506AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional


    OCR Scan
    BU4506AF BU4506AF PDF

    Untitled

    Abstract: No abstract text available
    Text: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television


    OCR Scan
    BU4506DX 16kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope w ith integrated d am per diode intended fo r use in horizontal deflection circuits of colour television


    OCR Scan
    BU4506DZ PDF

    BU4506AZ

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional


    OCR Scan
    BU4506AZ BU4506AZ PDF

    BU4506DF

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features


    OCR Scan
    BU4506DF 16kHz BU4506DF PDF

    BU4506AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional


    OCR Scan
    BU4506AF BU4506AF PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television


    OCR Scan
    BU4506DZ PDF

    4506DX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith integrated diode in a plastic fu ll-p a ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features


    OCR Scan
    BU4506DX 4506DX PDF

    BU4506AZ

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional


    OCR Scan
    BU4506AZ BU4506AZ PDF

    BU4506AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional


    OCR Scan
    BU4506AX BU4506AX PDF