BU326A TRANSISTOR Search Results

BU326A TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BU326A TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BU326A Abstract: BU326 Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN	Original	BU326A BU326A BU326	PDF
BU326A Abstract: BU326 Text: BU326A  HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: ■ POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN	Original	BU326A BU326A BU326	PDF
BU326A Abstract: BU326 Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN	Original	BU326A BU326A BU326	PDF
BU326 Abstract: BU326A Text: SavantIC Semiconductor Product Specification BU326 BU326A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage;high speed ·Low collector saturation voltage. APPLICATIONS ·Intended for operating in CTV receiver’s chopper supplies.	Original	BU326 BU326A BU326 BU326A	PDF
NPN 800V Abstract: NPN VCEO 800V BU326A Text: NPN BU326A SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25 °C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)	Original	BU326A 80-Emitter NPN 800V NPN VCEO 800V BU326A	PDF
NPN Transistor 1A 400V Abstract: BU326A BU326 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper	Original	BU326A NPN Transistor 1A 400V BU326A BU326	PDF
BU326A Transistor Abstract: No abstract text available Text: ., U na. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BU326A Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: V C EO(sus)=400V(Min) • Low Collector-Emitter Saturation Voltage:V C E(sat)=1.5V(Max.)@lc=2.5A	Original	BU326A BU326A Transistor	PDF
DK53 Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037 Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037	PDF
DK53 Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513 Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
bu326 Abstract: BU326A Text: BU326 BU326A SGSTHO M SON HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BU326 and BU326A are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. ABSOLUTE M AXIM UM RATINGS Value	OCR Scan	BU326 BU326A BU326A 326-BU326A	PDF
Untitled Abstract: No abstract text available Text: SGS-mOMSON MOgn ia,ieiri®i0 Di BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE • NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN	OCR Scan	BU326A BU326A 5CC8H20	PDF
bu326a Abstract: bu326 Text: 7^537 0056557 0 • *T" 3>~S-\3 SGS-THOMSON M tg[^ »[i(M i«S_ S G S-TH0MS0N BU326 BU326A 3QE P HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BU326 and BU326A are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case particularly intended for switch-mode CTV supply	OCR Scan	BU326 BU326A BU326 BU326A 10Oii BU326-BU326A BU326-B U326A	PDF
Untitled Abstract: No abstract text available Text: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 2 DESCRIPTION	OCR Scan	BU326A BU326A P003F	PDF

lg crt tv circuit diagram Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326 Text: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS	OCR Scan	BU326 BU326A BU326 BU326-BU326A 25x4x2 19x15x5 330il lg crt tv circuit diagram lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU406 Transformer eht ctv eht transformer SGS-Thomson bu326	PDF
BU326 Abstract: BU326A BU326-BU326A Text: INSTR -COPTO} DE 0 0 3 t , t , a cl S Ô961726 TEXAS INSTR ~<OPTO> 62C 36629 r - i s - v BU326,BU326A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 60 W at 2 5 °C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current	OCR Scan	fliti75b 9e1726 BU326 BU326A BU326A 0d3fcjfci33 BU326, T-33-// BU326-BU326A	PDF
BU326 Abstract: 326a Text: BU326, BU326A >ÎL BU326, 326A NPN POWER TRANSISTORS Switching-Mode CTV Power Supply Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1.77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11.15 12,25 26,67 3.84 4,19 - PIN CONFIGURATION	OCR Scan	BU326, BU326A 100mA; 300yis; BU326 326a	PDF
BU326 Abstract: BU326-BU326A 331Z BU326A st bux Text: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current	OCR Scan	BU326, BU326A BU326 BU326-BU326A 331Z st bux	PDF
IR 92 0151 Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184 Text: MO TO RO LA SC XSTRS/R F 12E D \| b3b?2S4 QGâMflQâ 2 \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.	OCR Scan	AN415A) IR 92 0151 transistor BU 109 bu326 t 326 Transistor transistor BU 184	PDF
bu800 Abstract: BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503 Text: POWER TRANSISTORS — BIPOLAR M ETAL TO-204AA Formerly TO-3 CASE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins MODIFIED TO-3 CASE 197-01 — 60 mil pins S T Y L E 1: PIN 1. 2. CASE. BASE EM ITTER C O LLEC TO R R e sistiv e Sw itching lcCont	OCR Scan	MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 bu800 BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503	PDF
BU2080 Abstract: No abstract text available Text: TO-3 Power Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. V CBO V C E0 (V) Min (V) Min 1500 800 2SD1168P Pd 'c VebO (W) (A) (V) Min 0Tc=25°c 5 50 !cbo (PA) Max V CB @ (V) hpE 1000 1500 9	OCR Scan	2SD1168P 2SD1168Q 2SD200 2SD83 BU326 BU326A BU608 CDN055 BU2080	PDF
BU208D Abstract: BU208 BU208A 2SD870 BDY38 BOY20 BU2080 2SC1942 2SD1168 2SD1168P Text: TO-3 Power Package Transistors NPN Maximum Ratings Type No. V CBO VCEO V EBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) •c Po (W) (A) To=25°c ICBO V CB •c e s V CE (MA) Max 0 (V) (MA) Max (V) 10 e	OCR Scan	2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD869 2SD870 BU204 BU205 BU207 BU208D BU208 BU208A BDY38 BOY20 BU2080	PDF
BDY38 Abstract: 2SD1168P BU606 2SD870 2S0200 2SC1942 2SD1168 2SD1168Q 2SD200 2SD869 Text: TO-3 Power Package Transistors NPN Maximum Ratings Type No. VCBO VCE0 VE0O (V) (V) (V) Min Min Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) P0 (W) (A) @Tc=25°c fcao (MA) Max VCB (V) 'CES	OCR Scan	2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD869 2SD870 BU204 BU205 BU207 BDY38 BU606 2S0200	PDF
BDY20 Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168 Text: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB	OCR Scan	2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD870 2SD871 BU205 BU207 BU208 BDY20 BU208A BU608 2S01168 2S0200 BDY38 BU208	PDF

BU326A TRANSISTOR Search Results

BU326A TRANSISTOR Result Highlights (5)

BU326A TRANSISTOR Datasheets Context Search

BU326A

BU326A

BU326A

BU326

NPN 800V

NPN Transistor 1A 400V

BU326A Transistor

DK53

DK53

BUV48I

bu326

Untitled

bu326a

Untitled

lg crt tv circuit diagram

BU326

BU326

BU326

IR 92 0151

bu800

BU2080

BU208D

BDY38

BDY20