BTD2118LJ3
Abstract: No abstract text available
Text: CYStech Electronics Corp. Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Features • Low VCE sat , VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics
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C850J3
BTD2118LJ3
BTB1412LJ3
O-252
UL94V-0
BTD2118LJ3
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BTD2118LJ3
Abstract: No abstract text available
Text: CYStech Electronics Corp. Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics
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Original
|
PDF
|
C850J3
BTD2118LJ3
BTB1412LJ3
O-252
UL94V-0
BTD2118LJ3
|