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    transistor bt 808

    Abstract: BT 808 600 bt 808 BT 159 bt 1488 BT 808 400 CHCI21 corrosion inhibitor BT 386
    Text: 5E Fiberglass Enclosure Accessories Drain & Breather Vent CHDV - Drain Vent Encapsulated Screws CHDVKIT - Drain Vent Kit CHDVKIT4X - Drain Vent Kit 4X Louver Plate Vent CHBVKIT4X - Breather Vent Kit 4X Carrying Handle 5E CHLP1 CHLPKIT CHENCAP2PK CHENCAP4PK


    Original     		PDF CHCI21 FACP1816SA FACP2016SA transistor bt 808 BT 808 600 bt 808 BT 159 bt 1488 BT 808 400 CHCI21 corrosion inhibitor BT 386

    V59C1

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25A 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns V59C1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    peb4266t

    Abstract: PEB 4266T 4266V PEB3265F 3264H PEB 4264t v1.2 3265H PEB 3264 v1.4 PEB3265H 4264T
    Text: D u S L I C F A M I LY OV E R V I E W INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G Features SLICOFI-2 Number of voice channels SLICOFI-2S SLICOFI-2S2 2 2 2 DTMF detection Yes No No Line echo cancellation up to 8 ms


    Original     		PDF 20B/3/31 B159-H7909-X-X-7600 peb4266t PEB 4266T 4266V PEB3265F 3264H PEB 4264t v1.2 3265H PEB 3264 v1.4 PEB3265H 4264T

    2341B

    Abstract: kool mu DB3 0531 1803e 455E 9742e mpp a2 A 14U KH K-102
    Text: Material Properties PERMEABILITY VS. T, B, & F – TYPICAL Permeability µ µ vs. T dynamic range (-50˚ C to +100˚C) Painted cores usuable to 200˚C µ vs. B dynamic range 50 to 4000gauss (peak at 1000 gauss) µ vs. F. flat to. 14µ 0.6% +0.4% 9 MHz


    Original     		PDF 4000gauss 2341B kool mu DB3 0531 1803e 455E 9742e mpp a2 A 14U KH K-102

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V73CBG01 808/168 RB HIGH PERFORMANCE 1Gbit DDR3L SDRAM 8 BANKS X 16Mbit X 8 8 BANKS X 8Mbit X 16 - G6 - H7 - I9 - J11 - K13 DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Clock Cycle Time ( tCK5, CWL=5 ) 3.0ns 3.0ns 3.0ns 3.0ns 3.0ns Clock Cycle Time ( tCK6, CWL=5 )


    Original     		PDF V73CBG01 16Mbit DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 tCK10, tCK11,

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V73CAG01 808/168 RB HIGH PERFORMANCE 1Gbit DDR3 SDRAM 8 BANKS X 16Mbit X 8 8 BANKS X 8Mbit X 16 - G6 - H7 - I9 - J11 - K13 DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Clock Cycle Time ( tCK5, CWL=5 ) 3.0ns 3.0ns 3.0ns 3.0ns 3.0ns Clock Cycle Time ( tCK6, CWL=5 )


    Original     		PDF V73CAG01 16Mbit DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 tCK10, tCK11,

    V59C1G01

    Abstract: No abstract text available
    Text: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: V59C1G01 408/808 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 18 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    V59C1G01

    Abstract: No abstract text available
    Text: V59C1G01 408/808/168 QB HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns

    BT 808 600

    Abstract: BT 808 400 an 503 hall sensor DFN10 G003 G008 hall 506 analoge schaltkreise
    Text: iC-MZ HALL-DIFFERENZSENSOR Ausgabe A2, Seite 1/11 EIGENSCHAFTEN ANWENDUNGEN ♦ ♦ ♦ ♦ ♦ Zahnradabtastung ♦ Polrad- und Magnetbandabtastung ♦ Magnetische Inkrementalgeber ♦ Näherungsschalter ♦ Zweikanal-Leitungstreiber bis 100 kHz ♦ ♦ ♦


    Original     		PDF RS-422-kompatibel DFN10 BT 808 600 BT 808 400 an 503 hall sensor DFN10 G003 G008 hall 506 analoge schaltkreise

    AH 503 hall sensor

    Abstract: hall sensor N 503 of AH 503 hall sensor
    Text: iC-MZ DIFFERENTIAL HALL SWITCH Rev A3, Page 1/11 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ Gear wheel sensing ♦ Pole wheel and magnetic tape scanning ♦ Magnetic incremental encoders ♦ Proximity switches ♦ Two-channel line drivers up to 100 kHz ♦


    Original     		PDF RS422-compatible DFN10 DFN10 D-55294 AH 503 hall sensor hall sensor N 503 of AH 503 hall sensor

    hall effect position sensor 503

    Abstract: BT 808 600 hall 506 ua BT 816 803 Hall Effect Sensor clear DFN10 hall sensor N 503
    Text: ar y n i im prel iC-MZ DIFFERENTIAL HALL SWITCH Rev A1, Page 1/11 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ Gear wheel sensing ♦ Pole wheel and magnetic tape scanning ♦ Magnetic incremental encoders ♦ Proximity switches ♦ Two-channel line drivers up to


    Original     		PDF RS422-compatible DFN10 D-55294 hall effect position sensor 503 BT 808 600 hall 506 ua BT 816 803 Hall Effect Sensor clear DFN10 hall sensor N 503

    hall effect position sensor 503

    Abstract: BT 808 600 Sensor Magnetic clear DFN10 hall 503 hall 808 an 503 hall sensor DFN10 G003 G008
    Text: iC-MZ DIFFERENTIAL HALL SWITCH Rev A2, Page 1/11 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ Gear wheel sensing ♦ Pole wheel and magnetic tape scanning ♦ Magnetic incremental encoders ♦ Proximity switches ♦ Two-channel line drivers up to 100 kHz ♦


    Original     		PDF RS422-compatible DFN10 D-55294 hall effect position sensor 503 BT 808 600 Sensor Magnetic clear DFN10 hall 503 hall 808 an 503 hall sensor DFN10 G003 G008

    PF5AN

    Abstract: HD64F2238R 2222 733
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF H8S/2239 H8S/2238R H8S/2237 H8S/2227 PF5AN HD64F2238R 2222 733

    78C10

    Abstract: Hitachi DSA00280 hd64f2227
    Text: Hitachi 16-Bit Single-Chip Microcomputer H8S/2239 Series, H8S/2238R Series, H8S/2237 Series, H8S/2227 Series H8S/2239 HD64F2239, H8S/2239 HD6432239, H8S/2239 HD6432239W H8S/2238 HD64F2238R, H8S/2238 HD6432238R, H8S/2238 HD6432238RW H8S/2236 HD6432236R, H8S/2236 HD6432236RW


    Original     		PDF 16-Bit H8S/2239 H8S/2238R H8S/2237 H8S/2227 HD64F2239, HD6432239, 78C10 Hitachi DSA00280 hd64f2227

    Untitled

    Abstract: No abstract text available
    Text: SG572648TG8EZUU May 3, 2008 Ordering Information Part Numbers Description Module Speed SG572648TG8EZDB 64Mx72 512MB , DDR2, 200-pin SO-RDIMM, Registered, ECC, 64Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant), Industrial


    Original     		PDF SG572648TG8EZUU SG572648TG8EZDB 64Mx72 512MB) 200-pin 64Mx8 DDR2-400-333, PC2-3200 SG572648TG8EZDG

    74HC4078

    Abstract: 4078B 50J1 54HC 74HC M54HC4078 M74HC4078 ic 74hc4078
    Text: SGS-THOMSON M54HC4078 M74HC4078 IM 03 Hkd©ïï[M [fM0 g§ 8 INPUT NOR/OR GATE i HIGH SPEED tPD = 14 ns (TYP.) at Vc c = 5V i LOW POWER DISSIPATION Ice = 1 /»A (MAX.) at T a = 25°C HIGH NOISE IMMUNITY V nih = V n il = 28% VCC (MIN.) OUTPUT DRIVE CAPABILITY


    OCR Scan     		PDF M54HC4078 M74HC4078 4078B M54/74HC4078 74HC4078 4078B 50J1 54HC 74HC M74HC4078 ic 74hc4078

    IEC 874-1 method 6 for fibre optic

    Abstract: No abstract text available
    Text: FC/PC Series Page A The RADIALL range of FC/PC connectors enables low reflectance and low insertion loss termina­ tions to be manufactured for today’s high performance singlemode transmission systems. -F C /P C type I EC 874-7 / CECC BS EN 186110 - Zirconia ceramic alignment sleeve


    OCR Scan     		PDF