sdram 4 bank 4096 16
Abstract: HM5264165DTT-B60 Hitachi DSA00196
Text: HM5264165D-B60 HM5264805D-B60 HM5264405D-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-908 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165D-B60
HM5264805D-B60
HM5264405D-B60
16-bit
PC/100
ADE-203-908
HM5264165D
64-Mbit
1048576-word
sdram 4 bank 4096 16
HM5264165DTT-B60
Hitachi DSA00196
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HM5264805 Series
Abstract: HM5264165DTT-A60 sdram 4 bank 4096 16 Hitachi DSA00196
Text: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165D-A60
HM5264805D-A60
HM5264405D-A60
16-bit
PC/100
ADE-203-909
HM5264165D
64-Mbit
1048576-word
HM5264805 Series
HM5264165DTT-A60
sdram 4 bank 4096 16
Hitachi DSA00196
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ADP2300
Abstract: 682MLC SD53-6R8-R
Text: FEATURES TYPICAL APPLICATIONS CIRCUIT BST 3.0V TO 20V VIN ADP2300/ ADP2301 ON EN VOUT SW FB GND 08342-001 OFF Figure 1. 100 fSW = 1.4MHz fSW = 700kHz 95 90 EFFICIENCY % 1.2 A maximum load current ±2% output accuracy over temperature range Wide input voltage range: 3.0 V to 20 V
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ADP2300/ADP2301
ADP2300)
ADP2301)
ADP2300AUJZ-R7
ADP2300-EVALZ
ADP2301AUJZ-R7
ADP2301-EVALZ
ADP2300/ADP2301
D08342-0-6/12
ADP2300
682MLC
SD53-6R8-R
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Untitled
Abstract: No abstract text available
Text: Single Deck Rotary Switches SERIES 50 SERIES 51 0.5" Diameter, 200mA, .698" Behind Panel FEATURES • Optional Complete Seal for PC Board Assembly and Cleaning • Small 1/2" Diameter • Choice of 22.5°, 30°, 36°, 45°, 60° and 90° Angles of Throw in inches and millimeters
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200mA,
51SPT30â
MIL-3786
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50-DP
Abstract: switch rotary 30 9 decks
Text: Single Deck Rotary Switches SERIES 50 SERIES 51 0.5" Diameter, 200mA, .698" Behind Panel FEATURES • Optional Complete Seal for PC Board Assembly and Cleaning • Small 1/2" Diameter • Choice of 22.5°, 30°, 36°, 45°, 60° and 90° Angles of Throw • Up to 4 Poles on 1 Deck
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200mA,
MIL-3786
50-DP
switch rotary 30 9 decks
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JESD51-7
Abstract: MAX15039 MAX15039ETG T
Text: 19-4321; Rev 1; 12/09 KIT ATION EVALU E L B AVAILA 6A, 2MHz Step-Down Regulator with Integrated Switches Features The MAX15039 high-efficiency switching regulator delivers up to 6A load current at output voltages from 0.6V to 90% of VIN. The IC operates from 2.9V to 5.5V,
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MAX15039
500kHz
MAX15039
JESD51-7
MAX15039ETG T
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transistor ac 127
Abstract: No abstract text available
Text: 19-0530; Rev 1; 12/07 175V/2A, High-Speed, Half-Bridge MOSFET Drivers The MAX15012/MAX15013 high-frequency, 175V halfbridge, n-channel MOSFET drivers drive high- and lowside MOSFETs in high-voltage applications. These drivers are independently controlled and their 35ns typical propagation delay, from input to output, are
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75V/2A,
MAX15012/MAX15013
MAX15012A/C
MAX15013A/C
transistor ac 127
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Q67100-Q1192
Abstract: WL3 MARKING BST60
Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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HYB3116165BSJ/BST
HYB3118165BSJ/BST
16-Bit
HYB3118165BSJ/BST-50)
HYB3118165BSJ/BST-60)
GPJ05853
HYB3116
165BSJ/BST
P-SOJ-42
Q67100-Q1192
WL3 MARKING
BST60
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SC4525B
Abstract: NF216 20BQ030 SC4525A IPC-SM-782A ipc-SM-782 mathcad boost PS 235 16 pin DIL 9 volt recharge MP20K
Text: SC4525D 18V, 3A, 350kHz Step-Down Switching Regulator POWER MANAGEMENT Features Input range: 3V to 18V 3A Output Current 350kHz Fixed Switching Frequency Precision 1V Feedback Voltage Peak Current-Mode Control Cycle-by-Cycle Current Limiting
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SC4525D
350kHz
SC4525A
20BQ030
SC4525B
NF216
20BQ030
SC4525A
IPC-SM-782A
ipc-SM-782
mathcad boost
PS 235 16 pin DIL
9 volt recharge
MP20K
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SC1101CS
Abstract: IRLR3103 LL42 SC1101 SC1101CSTRT
Text: SC1101 Asynchronous Voltage Mode PWM Controller POWER MANAGEMENT Description Features The SC1101 is a versatile, low-cost, voltage-mode PWM controller designed for low output voltage DC/DC power supply applications. A simple, fixed-voltage buck
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SC1101
SC1101
500mA
MS-012,
IPC-SM-782A,
SC1101CS
IRLR3103
LL42
SC1101CSTRT
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c5047
Abstract: SC4524ASETR
Text: SC4524A 28V 2A Step-Down Switching Regulator POWER MANAGEMENT Features Description Wide input range: 3V to 28V 2A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control
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SC4524A
SC4524A
c5047
SC4524ASETR
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Untitled
Abstract: No abstract text available
Text: 19-4321; Rev 3; 12/10 KIT ATION EVALU E L B AVAILA 6A, 2MHz Step-Down Regulator with Integrated Switches Features The MAX15039 high-efficiency switching regulator delivers up to 6A load current at output voltages from 0.6V to 90% of VIN. The IC operates from 2.9V to 5.5V,
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MAX15039
500kHz
MAX15039
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MAX15013A
Abstract: MAX15012AASA
Text: 19-0530; Rev 0; 5/06 175V/2A, High-Speed, Half-Bridge MOSFET Drivers The MAX15012/MAX15013 high-frequency, 175V halfbridge, n-channel MOSFET drivers drive high- and lowside MOSFETs in high-voltage applications. These drivers are independently controlled and their 35ns typical propagation delay, from input to output, are
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75V/2A,
MAX15012/MAX15013
MAX15012A/MAX15013A
MS012
MAX15013A
MAX15012AASA
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JESD51-7
Abstract: MAX15039
Text: 19-4321; Rev 3; 12/10 KIT ATION EVALU E L B AVAILA 6A, 2MHz Step-Down Regulator with Integrated Switches Features The MAX15039 high-efficiency switching regulator delivers up to 6A load current at output voltages from 0.6V to 90% of VIN. The IC operates from 2.9V to 5.5V,
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MAX15039
500kHz
MAX15039
JESD51-7
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ELPIDA mobile DDR
Abstract: DDR266 DDR333
Text: PRELIMINARY DATA SHEET 128M bits DDR Mobile RAM WTR Wide Temperature Range EDD12322GBH-TS (4M words x 32 bits) Specifications Features • Density: 128M bits • Organization × 32 bits: 1M words × 32 bits × 4 banks • Package: 90-ball FBGA Lead-free (RoHS compliant) and Halogen-free
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EDD12322GBH-TS
90-ball
333Mbps/266Mbps
M01E0706
E1530E20
ELPIDA mobile DDR
DDR266
DDR333
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM WTR Wide Temperature Range , Low Power Function EDD51323CBH-LS(16M words x 32 bits) Specifications Features • Density: 512M bits • Organization: 4M words × 32 bits × 4 banks • Package: 90-ball FBGA Lead-free (RoHS compliant)
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EDD51323CBH-LS
90-ball
333Mbps/266Mbps
M01E0706
E1355E20
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free P55 MOSFET
Abstract: No abstract text available
Text: SC1101 Asynchronous Voltage Mode PWM Controller POWER MANAGEMENT Description Features The SC1101 is a versatile, low-cost, voltage-mode PWM controller designed for low output voltage DC/DC power supply applications. A simple, fixed-voltage buck
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SC1101
IPC-SM-782A,
free P55 MOSFET
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BT 816 triac
Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Text: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag
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Untitled
Abstract: No abstract text available
Text: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit x 4-bank/2-Mword x 8-bit x 4-bank /4-Mword x 4-bit x 4-bank PC/100 SDRAM HITACHI ADE-203-909A Z Rev. 1.0 Dec. 3, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word x 16-bit x 4 bank. The
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HM5264165D-A60
HM5264805D-A60
HM5264405D-A60
16-bit
PC/100
ADE-203-909A
HM5264165D
64-Mbit
1048576-word
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA2123AF TOSHIBA BIPOLAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA2123A F 1.5 V STEREO HEADPHONE AMPLIFIER The TA2123AF is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto-reverse preamplifiers, dual power
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TA2123AF
TA2123A
TA2123AF
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117405BSJ/BST-60/70
TC5117405BSJ/BST
TC5117405BSJ/BST
300mil)
DR16070295
SOJ26-P-300C)
BST60
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TC5117405
Abstract: BST60
Text: TOSHIBA T C 5 1 1 7 4 0 5 B S J / B S T -6 0 / 7 0 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5117405BSJ/BST
TC5117405BSJ/
300mil)
TC5117405BSJ/BST-60/70
DR16070295
TC5117405
BST60
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Untitled
Abstract: No abstract text available
Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
288-word
16-bit
ADE-203-280
Hz/83
Hz/66
5216165TT
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HM5216805LTT-10
Abstract: HM5241
Text: HM5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304C Z Rev, 3.0 Jan. 20,1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,
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HM5216805
HM5216405
576-word
152-word
ADE-203-304C
Hz/83
Hz/66
HM5216805LTT-10
HM5241
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