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    BST N 44 80 Search Results

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    BST N 44 80 Price and Stock

    Vishay Intertechnologies PTN0805E4480BST1

    Thin Film Resistors - SMD PTN0805 25PPM 448 0.1% S T1 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0805E4480BST1
    • 1 $0.76
    • 10 $0.538
    • 100 $0.365
    • 1000 $0.228
    • 10000 $0.228
    Get Quote

    Vishay Intertechnologies PTN0402E4480BST1

    Thin Film Resistors - SMD PTN0402 25PPM 448 0.1% S T1 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0402E4480BST1
    • 1 $0.71
    • 10 $0.508
    • 100 $0.344
    • 1000 $0.223
    • 10000 $0.223
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    Vishay Intertechnologies PTN0603E4480BST1

    Thin Film Resistors - SMD PTN0603 25PPM 448 0.1% S T1 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0603E4480BST1
    • 1 $0.71
    • 10 $0.508
    • 100 $0.344
    • 1000 $0.223
    • 10000 $0.223
    Get Quote

    Vishay Intertechnologies PTN0805E3442BST0

    Thin Film Resistors - SMD PTN0805 25PPM 34.4K 0.1% S T0 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0805E3442BST0
    • 1 $0.75
    • 10 $0.537
    • 100 $0.364
    • 1000 $0.236
    • 10000 $0.218
    Get Quote

    Vishay Intertechnologies PTN0805E4482BST1

    Thin Film Resistors - SMD PTN0805 25PPM 44.8K 0.1% S T1 e1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTN0805E4482BST1
    • 1 $0.76
    • 10 $0.538
    • 100 $0.365
    • 1000 $0.236
    • 10000 $0.236
    Get Quote

    BST N 44 80 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSTN4480IS9 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BSTN4480K Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    BST N 44 80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC59WM815BFT

    Abstract: TC59WM803BFT TC59WM807BFT Selex
    Text: TC59WM815/07/03BFT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


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    PDF TC59WM815/07/03BFT-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59WM815BFT TC59WM807BFT TC59WM803BFT Selex

    smd code marking wl5

    Abstract: Q67100-Q1188 BST60
    Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


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    PDF HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 smd code marking wl5 Q67100-Q1188 BST60

    Q67100-Q1192

    Abstract: WL3 MARKING BST60
    Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


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    PDF HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 Q67100-Q1192 WL3 MARKING BST60

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11056-1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622C-60/-70/-80/-80L CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF DS05-11056-1E MB81F161622C-60/-70/-80/-80L 288-Word MB81F161622C 16-bit D-63303 F9910

    F9901

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-4E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF DS05-11039-4E MB81F161622B-60/-70/-80 288-Word MB81F161622B 16-bit F9901 F9901

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622C-60/-70/-80/-80L CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F161622C-60/-70/-80/-80L 288-Word MB81F161622C 16-bit

    MB81F643242B-70

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11051-1E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory


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    PDF DS05-11051-1E /-80/-10/-70L/-80L/-10L/-70LL/-80LL/-10LL 288-Word MB81F643242B 32-bit MB81F643242B-70

    Fujitsu APD

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.1 Draft ADVANCE INFO. MEMORY CMOS 4 x 2M × 16 BIT DOUBLE DATA RATE SDRAM MB81PL121647-75/-80/-10 CMOS 4-BANK 2,097,152-WORD × 16 BIT Synchronous Dynamic Random Access Memory with Double Data Rate n DESCRIPTION The Fujitsu MB81PL121647 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing


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    PDF MB81PL121647-75/-80/-10 152-WORD MB81PL121647 16-bit F9903 Fujitsu APD

    F9901

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F161622B-60/-70/-80 288-Word MB81F161622B 16-bit F9901

    LM5007MM

    Abstract: LM5007 LM5007MMX LM5007SD LM5007SDX MUA08A
    Text: LM5007 High Voltage 80V Step Down Switching Regulator General Description Features The LM5007 Step Down Switching Regulator features all of the functions needed to implement low cost, efficient, Buck bias regulators. This high voltage regulator contains an 80 V,


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    PDF LM5007 LM5007 LM5007MM LM5007MMX LM5007SD LM5007SDX MUA08A

    variable resistor 2.2k

    Abstract: fr3c2 transistor preamp with bass treble circuit diagram 40hz bass filter CIRCUIT diagram 2SA1362 TA2123AF DRV_B curent sensor
    Text: TA2123AF TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AF 1.5V Stereo Headphone Amplifier The TA2123AF is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto−reverse preamplifiers, dual power amplifiers with bass /


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    PDF TA2123AF TA2123AF variable resistor 2.2k fr3c2 transistor preamp with bass treble circuit diagram 40hz bass filter CIRCUIT diagram 2SA1362 DRV_B curent sensor

    PWC PW-2

    Abstract: 2SA1362 TA2123AFG transistor preamp with bass treble circuit diagram
    Text: TA2123AFG TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AFG 1.5V Stereo Headphone Amplifier The TA2123AFG is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto−reverse preamplifiers, dual power amplifiers with bass /


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    PDF TA2123AFG TA2123AFG PWC PW-2 2SA1362 transistor preamp with bass treble circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: LM5007EP Enhanced Plastic High Voltage 80V Step Down Switching Regulator General Description Features The LM5007EP Step Down Switching Regulator features all of the functions needed to implement low cost, efficient, Buck bias regulators. This high voltage regulator contains an


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    PDF LM5007EP

    LM5007EP

    Abstract: SLF7045T-101MR60
    Text: LM5007EP Enhanced Plastic High Voltage 80V Step Down Switching Regulator General Description Features The LM5007EP Step Down Switching Regulator features all of the functions needed to implement low cost, efficient, Buck bias regulators. This high voltage regulator contains an


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    PDF LM5007EP LM5007EP SLF7045T-101MR60

    SIEMENS BST

    Abstract: SIEMENS BST P SIEMENS BST f SIEMENS BST P 4960 SIEMENS "bst e" SIEMENS BST F 05 SIEMENS BST P 4960 d SIEMENS BST G 03 60 SIEMENS BST 4486 BSTN44C80
    Text: SIEMENS AKTIENGESELLSCHAF Type ^DRM ññD D ^TSM Í trms 25°C,10ms A ^RRH V A B St N 44 C 60 900 B StN 4 4 C 8 0 1 200 B StN 4 4 C 86 1 300 BSt N 47 C 60 900 B St N 47 C 66 1000 B St N 49 B 53 800 B St N 49 B 60 900 B S tN 6 1 1 3 200 B St N 6120 300 B St N 6126


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    PDF G0151L BStN44C80 BStN44C86 BStN6113 BStP4460 BStP4480 SIEMENS BST SIEMENS BST P SIEMENS BST f SIEMENS BST P 4960 SIEMENS "bst e" SIEMENS BST F 05 SIEMENS BST P 4960 d SIEMENS BST G 03 60 SIEMENS BST 4486

    SIEMENS BST h 05 90

    Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1 k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature


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    PDF 16-Bit HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160 HYB3118160 SIEMENS BST h 05 90 SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    PDF MB81F161622B-60/-70/-80 288-Word MB81F161622B 16-bit F161622B 50-pin FPT-50P-M05) F50005S-2C-1

    SIEMENS BST

    Abstract: SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70


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    PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSJ/BST-70) 3116160BSJ/BST-50) 3116160BSJ/BST-60) 160BSJ/BST SIEMENS BST SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20

    d8430

    Abstract: 18165BSJ-60 BST60
    Text: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time


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    PDF 16-Bit 3116165BSJ/BST -5Q/-60/-70 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 3118165BSJ/BST-70) 3116165BSJ/BST-50) 3116165BSJ/BST-60) d8430 18165BSJ-60 BST60

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET A E 5E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit ; Synchronous Dynamic Random Access Memiôiry DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random AccessiMemory SDRAM containing


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    PDF MB81F161622B-70/-80 288-Word MB81F161622B 16-bit F161622B 50-pin FPT-50P-M05)

    SIEMENS BST

    Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
    Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC


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    PDF 16-Bit 3116165BSJ/BST 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 165BSJ/BST SIEMENS BST SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60

    SIEMENS BST

    Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70


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    PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSAS 160BSJ/BST 16-DRAM flS3Sb05 SIEMENS BST SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60

    F643242B

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4x512 Kx 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B -70/-80/-10/-70L/-80L/-1OL CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF 4x512 MB81F643242B -70/-80/-10/-70L/-80L/-1OL 288-Word 32-bit F643242B; F9904 F643242B

    Untitled

    Abstract: No abstract text available
    Text: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.


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    PDF HM5221605 536-word 16-bit ADE-203-199A Hz/58 Hz/50 P7Z07 /77T7, 44TbED3