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    BSS123 MARKING Search Results

    BSS123 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    BSS123 MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bss123 marking sa

    Abstract: No abstract text available
    Text: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code


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    BSS123 O-236AB* O-236AB: bss123 marking sa PDF

    BSS123 spice

    Abstract: BSS123 BSS123-7 BSS123-7-F bss123 marking DS30366
    Text: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Fast Switching Speed A Low Input/Output Leakage High Drain-Source Voltage Rating B


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    BSS123 OT-23 com/datasheets/ap02007 BSS123-7-F. DS30366 BSS123 spice BSS123 BSS123-7 BSS123-7-F bss123 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·


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    BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 PDF

    SOT23 K23

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·


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    BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 SOT23 K23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code


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    BSS123 O-236AB: O-236AB* PDF

    BSS123 spice

    Abstract: K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 250dk SOT23 K23 bss123 MARKING CODE BSS123-7-F
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version


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    BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, com/datasheets/ap02007 BSS123-7-F. DS30366 BSS123 spice K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 250dk SOT23 K23 bss123 MARKING CODE BSS123-7-F PDF

    3V02

    Abstract: No abstract text available
    Text: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code


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    O-236AB* BSS123 O-236AB: BSS123 OT-23. 3V02 PDF

    SOT-23 marking 717

    Abstract: SAP SOT23 sot-23 MARKING CODE 718
    Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


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    BSS123 O-236AB: O-236AB* OT-23. SOT-23 marking 717 SAP SOT23 sot-23 MARKING CODE 718 PDF

    SAP SOT23

    Abstract: marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5
    Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


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    BSS123 O-236AB: O-236AB* OT-23. SAP SOT23 marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5 PDF

    DS30366

    Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
    Text: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05


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    BSS123 OT-23 DS30366 K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice PDF

    D8541

    Abstract: alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL Drain-source voltage Drain-gate voltage


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    BSS123. ZXM41N10F bre611 D8541 alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F PDF

    Untitled

    Abstract: No abstract text available
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage


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    BSS123. ZXM41N10F PDF

    BSS123

    Abstract: Philips RDS business MSB003 BP317 MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    BSS123 SC13b SCA54 137107/00/01/pp8 BSS123 Philips RDS business MSB003 BP317 MBB692 PDF

    Philips MARKING CODE

    Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
    Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p


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    OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 Philips MARKING CODE sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23 PDF

    B55123

    Abstract: bss123 marking BSS123 BSS100L XBSS123 125C-2
    Text: N-Channel Enhancement Mode Vertical DMOS FET BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low C urrent Drive Ease of Paralleling APPLICATIONS


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    BSS100L/BSS123 BSS123 OT-23 BSS100L XBSS123 BSS100L 100mA, B55123 bss123 marking 125C-2 PDF

    BSS123

    Abstract: BSS100L XBSS123
    Text: calocfic N-Channel Enhancement Mode Vertical DMOS FET CORPORATION BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling


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    BSS100L BSS123 OT-23 XBSS123 100mA, 100mA 280mA PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Mechanical Data • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


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    BSS123 OT-23 J-STD-020C MIL-STD-202, DS30366 PDF

    BSS123 spice

    Abstract: "k23" sot-23 BSS123-7-F BSS123 K23 SOT-23 MARKING K23 SOT23
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Mechanical Data • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


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    BSS123 OT-23 J-STD-020C MIL-STD-202, DS30366 BSS123 spice "k23" sot-23 BSS123-7-F BSS123 K23 SOT-23 MARKING K23 SOT23 PDF

    BSS123

    Abstract: No abstract text available
    Text: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


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    BSS123 BSS123 PDF

    SOT-23 Product Code bss123

    Abstract: DSS SOT23 marking 9a sot-23
    Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code


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    OT-23 BSS123 OT-23: SOT-23 Product Code bss123 DSS SOT23 marking 9a sot-23 PDF

    SOT23 K23

    Abstract: K23 SOT23 MARKING
    Text: BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 Max 0.37 0.51 B 1.20 1.40 C


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    BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 DS30366 SOT23 K23 K23 SOT23 MARKING PDF

    BSS123

    Abstract: No abstract text available
    Text: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


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    BSS123 OT-23 BSS123 PDF

    TR40-10

    Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
    Text: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance


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    23b32G BSS123 Q62702-SS12 OQ171bO TR40-10 SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12 PDF

    BSS123Q-7-F

    Abstract: MARKING CODE 028a sot 23
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


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    BSS123 DS30366 BSS123Q-7-F MARKING CODE 028a sot 23 PDF