2n6719
Abstract: No abstract text available
Text: . . w . . bflF- High VoltageAmplifiers Device V CE0 sust (Volts) Min 300 k bSQ113D 003^532 hfiT « N S C 5 NATL SEHIC0ND (DISCRETE ) lc (mA) V CE(sal) lc 4 U (Volts) Min fT Max Mia (mA) 2N6719 500 40 30 MMBTA42 500 40 30 0.5 20 500 40 30 0.5 20 500
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2N6719
MMBTA42
MPSA42
MMBTA92
MPSA92
bSQ113D
2N5401
MMBT5401
2N5400
MPSL51
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NDS9936
Abstract: Vi46 ab-1 national
Text: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9936
LS01130
125-C
bS01130
NDS9936
Vi46
ab-1 national
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55b6
Abstract: NDC631N
Text: National J u ly 1 9 9 6 Semiconductor NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 4.1 A, 20 V. R ^ , = 0.06 Cl @ V GS = 4.5 V Rds,on, = 0.0 75 Cl @ V GS =2.7 V. These N-Channel lo g ic level enhancem ent m ode
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NDC631N
55b6
NDC631N
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Untitled
Abstract: No abstract text available
Text: MPSA56 I MMBTA561 PZTA56 Discrete POWER & Signal Technologies National Semiconductor PZTA56 MMBTA56 MPSA56 SOT-23 SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
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MPSA56
MMBTA56
PZTA56
MPSA56
MMBTA56
OT-23
OT-223
bSD1130
PSA56
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mpsa92 "sot23"
Abstract: mpsa92
Text: MPSA92 / MMBTA92 / PZTA92 Discrete POWER & Signal Technologies National e ? Semiconductor~ MMBTA92 MPSA92 PZTA92 SOT-23 SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings*
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MPSA92
MMBTA92
PZTA92
MPSA92
MMBTA92
OT-23
OT-223
bSQ113D
DD407
mpsa92 "sot23"
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bc2378
Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi
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tS0113D
J15511
SD1130
bc2378
box33c
b0345
b0348
b0735
B0346
b073b
B0736
b0737
B0633
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bc807
Abstract: BC807-40 BC807-25 BC807-16
Text: Semiconductor" BC807-16 BC807-25 BC807-40 SOT-23 BC807-16 / BC807-25 / BC807-40 t? Discrete POWER & Signa l Technologies National B Mark: S A ./5 B ./5 C . PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78.
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BC807-16
BC807-25
BC807-40
OT-23
bc807
BC807-40
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