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    BSP1 Price and Stock

    Fix Supply 0605ABSP188

    Self-Tapping Screw - Type AB - S
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    DigiKey 0605ABSP188 100,000
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    Fix Supply 1006ABSP188

    Self-Tapping Screw - Type AB - S
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    DigiKey 1006ABSP188 80,000 4,000
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    onsemi BSP16T1G

    TRANS PNP 300V 0.1A SOT223
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    DigiKey BSP16T1G Reel 2,000 1,000
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    BSP16T1G Cut Tape 540 1
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    Verical BSP16T1G 3,000 1,000
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    Arrow Electronics BSP16T1G 7,000 98 Weeks 7,000
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    Bristol Electronics BSP16T1G 535
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    Rochester Electronics BSP16T1G 18,226 1
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    TME BSP16T1G 2,260 1
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    ComSIT USA BSP16T1G 5,000
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    Avnet Silica BSP16T1G 4,000 13 Weeks 1,000
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    EBV Elektronik BSP16T1G 14 Weeks 1,000
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    Flip Electronics BSP16T1G 5,000
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    New Advantage Corporation BSP16T1G 3,000 1
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    Infineon Technologies AG BSP135IXTSA1

    MOSFET N-CH 600V 120MA SOT223-4
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    DigiKey BSP135IXTSA1 Reel 1,000 1,000
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    BSP135IXTSA1 Cut Tape 350 1
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    Avnet Americas BSP135IXTSA1 Reel 1,000 18 Weeks 1,000
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    Mouser Electronics BSP135IXTSA1 1,954
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    Verical BSP135IXTSA1 19,000 1,000
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    BSP135IXTSA1 2,000 43
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    Newark BSP135IXTSA1 Cut Tape 997 1
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    EBV Elektronik BSP135IXTSA1 21 Weeks 1,000
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    JRH Electronics MWDM1L-15PBSP-.110

    MICRO D CONNECTOR
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    DigiKey MWDM1L-15PBSP-.110 Bulk 47 1
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    BSP1 Datasheets (282)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BSP-1 MicroMetrics Passive Component Original PDF
    BSP100 Philips Semiconductors N-Channel Enhancement Mode TrenchMOS Transistor Original PDF
    BSP100,135 NXP Semiconductors N-channel enhancement mode TrenchMOS transistor - Configuration: Single N-channel ; ID DC: 6 A; Qgd (typ): 0.7 nC; RDS(on): 100@10V200@4.5V mOhm; VDSmax: 30 V; Package: week 35, 2003 Original PDF
    BSP100T Philips Semiconductors Transistor Mosfet N-CH 30V 6A 4SOT-223 T/R Original PDF
    BSP100/T3 Philips Semiconductors Transistor Mosfet N-CH 30V 6A 4SOT-223 T/R Original PDF
    BSP100T3 Philips Semiconductors N-channel enhancement mode TrenchMOS transistor Original PDF
    BSP100T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BSP103 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSP103 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSP105 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSP105 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSP106 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSP106 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSP106 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSP106T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BSP107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSP107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSP107 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSP107T/R Philips Semiconductors Transistor Mosfet N-CH 200V 0.2A 4SOT223 T/R Original PDF
    BSP107T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    BSP1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07256

    Abstract: No abstract text available
    Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.


    Original     		PDF BSP110 BSP110 OT223. OT223, 03ab45 03ab30 OT223 771-BSP110115 07256

    MRC218

    Abstract: MRC221
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 Dec 11 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		PDF M3D087 BSP130 BSP130 OT223 BSP130. MAM054 SCA73 613510/03/pp12 771-BSP130115 MRC218 MRC221

    SP19A

    Abstract: No abstract text available
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D SP19A

    BSP16T1

    Abstract: BSP19AT1 SMD310
    Text: ON Semiconductort NPN Silicon Epitaxial Transistor BSP19AT1 ON Semiconductor Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT-223 r14525 BSP19AT1/D BSP16T1 BSP19AT1 SMD310

    BSP16T1

    Abstract: SMD310
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


    Original     		PDF BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310

    brd8011

    Abstract: BSP16T1G
    Text: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO


    Original     		PDF BSP16T1G BSP16T1/D brd8011 BSP16T1G

    BSP171P

    Abstract: Q67041-S4019 BSP171
    Text: BSP171P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Logic level • Avalanche rated • dv /dt rated SOT-223 Type Package Ordering Code Marking BSP 171 P SOT-223


    Original     		PDF BSP171P OT-223 Q67041-S4019 -20ous BSP171P Q67041-S4019 BSP171

    BSP129

    Abstract: E6327 Q67000-S073 F035
    Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Depletion mode I DSS,min 240 V 6 Ω 0.05 A • dv /dt rated • Available with V GS(th) indicator on reel PG-SOT-223 Type Package Ordering Code Tape and Reel Information


    Original     		PDF BSP129 PG-SOT-223 Q67000-S073 E6327: PG-SOT223 Q67042 S4294 BSP129 E6327 Q67000-S073 F035

    Untitled

    Abstract: No abstract text available
    Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.


    Original     		PDF BSP110 BSP110 OT223. OT223, 03ab45

    MRC218

    Abstract: MBB691
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 Dec 11 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		PDF M3D087 BSP130 OT223 OT223 SCA73 613510/03/pp12 MRC218 MBB691

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT-223 BSP16T1

    BSP19

    Abstract: BSP16 BSP20 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors Product data sheet Supersedes data of 1997 Mar 03 1999 Jun 01 NXP Semiconductors Product data sheet NPN high-voltage transistors BSP19; BSP20 FEATURES PINNING


    Original     		PDF M3D087 BSP19; BSP20 OT223 BSP16. MAM287 OT223) 115002/03/pp6 BSP19 BSP16 BSP20 SC-73

    D460

    Abstract: No abstract text available
    Text: BSP171P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Logic level • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101


    Original     		PDF BSP171P PG-SOT223 L6327: OT-223: D460

    BSP124

    Abstract: MRC224 MTT 65 A 12 N depletion mode TRANSISTOR 436 Depletion
    Text: Philips Semiconductors • 711Q6Eb Q Q b 7 fl 0 L 6H3 M PH I N Jroduct specification N-channel depletion mode vertical D-MOS transistor BSP124 QUICK REFERENCE DATA FEATURES PARAMETER MIN. MAX. UNIT - 250 V - 250 mA - 1.5 W open drain - 20 V lD = 20 mA; VGS = 0


    OCR Scan     		PDF 00b7a01 BSP124 OT223 OT223 711DflSti BSP124 MRC224 MTT 65 A 12 N depletion mode TRANSISTOR 436 Depletion

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SO T-223 PA C K A G E P N P SILICON HIGH VO LTAGE TRANSISTOR S U R F A C E MOUNT EMITTER 3 MAXIMUM RATINGS Sym bol Value


    OCR Scan     		PDF BSP16T1 OT-223 T-223 318E-04, O-261AA

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t sta tu s Product specification d ate of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES . Very low RDS on • Direct interface to CMOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP106 OT223 OT223 bbS3T31 DQ3b042 BSP106. OT223. hhS3T31

    Untitled

    Abstract: No abstract text available
    Text: bb53^31 0023645 Philips Semiconductors DO1! H A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 N APIER PHILIPS/DISCRETE b?E T> QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP128 OT223

    MRC223

    Abstract: BSP130 MRC21B
    Text: Philips Semiconductors bb53S31 0023047 'ìfll B A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 N AMER P H IL IP S /D IS C R E T E FEATURES b7E D QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • No secondary breakdown.


    OCR Scan     		PDF bb53S31 OT223 OT223 BSP130 MRC223 BSP130 MRC21B

    TRANSISTOR marking 489 code

    Abstract: Transistor 5331 bsp126 marking 113a UBB073 TB5 marking marking code 533-1 4006a
    Text: BSP126 J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		PDF BSP126 OT223 OT223. DD3tiD71 BSP126 003L072 TRANSISTOR marking 489 code Transistor 5331 marking 113a UBB073 TB5 marking marking code 533-1 4006a

    ha 431 transistor

    Abstract: BSP122 UBB073 transistor 431 N
    Text: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP122 OT223 0to10 ha 431 transistor BSP122 UBB073 transistor 431 N

    transistor marking code 325

    Abstract: BSP110 marking r8v
    Text: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer


    OCR Scan     		PDF 0G25502 BSP110 OT223 7Z94040 transistor marking code 325 BSP110 marking r8v

    Untitled

    Abstract: No abstract text available
    Text: S0T223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSP120 ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE SYMBOL Drain-Source Voltage V DS Continuous Drain Current at Ta = 25°C UNIT 200 V 250 mA mA Pulse Drain Current 'dm 800 Gate-Source Voltage v gs ±20 V 1.5


    OCR Scan     		PDF S0T223 BSP120

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e


    OCR Scan     		PDF OT223 BSP16 -100nA -280V 300fis. FMMTA92

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996_ FEATURES * High V CE0- 350V * Low saturation voltage C O M PLEM EN TA RY T Y P E - BSP16 PARTMARKING D E T A IL - BSP19 ABSOLUTE MAXIMUM RATINGS. SYM BO L PARAM ETER


    OCR Scan     		PDF OT223 BSP16 BSP19 100mA, FZT658 T37Q5