BSIM3 SOI Search Results

BSIM3 SOI Result Highlights (5)

Part	Manufacturer	Description
EVAL-ADUM163N0EBZ	Analog Devices	ADUM163N0 Populate 6Ch ISO SOI
AMC-ADA4896-2ARMZ	Analog Devices	Amplifier Mezzanine Card 8-SOI
AD7940BRMZ	Analog Devices	100 KSPS, 14_bit ADC Mirco Soi
HMC540SLP3ETR	Analog Devices	SOI 4Bit DAT - v3, ESD Improve
ADRF5144BCCZN-R7	Analog Devices	10W SPDT in SOI, 500MHz to 20G

BSIM3 SOI Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Edge Flicker noise Measurement System and Module DATA SHEET By addressing the entire measurement path — from probe tip to data acquisition — the Edge is the world’s irst and only measurement solution that delivers accurate licker noise measurements from 1 Hz up to 40 MHz. As a module or a complete system, the	Original	PDF	Elite300, EDGE-DS-0612
0.6 um cmos process Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original	PDF
spice model Tunnel diode Abstract: dpsN TUNNEL DIODE spice model Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original	PDF

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Edge Flicker noise Measurement System and Module DATA SHEET By addressing the entire measurement path — from probe tip to data acquisition — the Edge is the world’s irst and only measurement solution that delivers accurate licker noise measurements from 1 Hz up to 40 MHz. As a module or a complete system, the

Original

PDF

Elite300, EDGE-DS-0612

0.6 um cmos process

Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

Original

PDF

spice model Tunnel diode

Abstract: dpsN TUNNEL DIODE spice model
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

Original

PDF