03F8
Abstract: MC33784 A3 DIODE
Text: Freescale Semiconductor Advance Information Document Number: MC33784 Rev 2.0, 7/2008 DSI 2.02 Sensor Interface 33784 The 33784 is a slave, Distributed System Interface Bus DBUS , version 2.02 compatible device, optimized as a sensor interface. The device contains circuits to power sensors such as accelerometers,
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MC33784
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03F8
MC33784
A3 DIODE
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC33784 Rev 3.0, 11/2009 DSI 2.02 Sensor Interface 33784 The 33784 is a slave, Distributed System Interface Bus DBUS , version 2.02 compatible device, optimized as a sensor interface. The device contains circuits to power sensors such as accelerometers,
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MC33784
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Introduction to accelerometers
Abstract: 03F8 MC33784 bsh 13 - n1
Text: Freescale Semiconductor Advance Information Document Number: MC33784 Rev 3.0, 11/2009 DSI 2.02 Sensor Interface 33784 The 33784 is a slave, Distributed System Interface Bus DBUS , version 2.02 compatible device, optimized as a sensor interface. The device contains circuits to power sensors such as accelerometers,
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MC33784
10-bit
Introduction to accelerometers
03F8
MC33784
bsh 13 - n1
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bluetooth advantages and disadvantages
Abstract: japanese transistor manual substitution verilog code for speech recognition japanese transistor substitution 29LV160 29lv200 transister 117 29lv400 apex20k400 K52 Package
Text: PF1084-05 S1C33 Family Data Sheets • S1C33 Family • S1C33000 Core • S1C33209 • S1C33T01 • S1C33L01 • S1C33S01 • S1C33221/222 • S1C33240 • S1C33210 • S1C33205/225/226/245 • S1C33L03 • S1C33 Family Development Environment • S1C33 Family Middleware and Firmware
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PF1084-05
S1C33
S1C33000
S1C33209
S1C33T01
S1C33L01
S1C33S01
S1C33221/222
S1C33240
bluetooth advantages and disadvantages
japanese transistor manual substitution
verilog code for speech recognition
japanese transistor substitution
29LV160
29lv200
transister 117
29lv400
apex20k400
K52 Package
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Hitachi DSA00776
Abstract: HM5216165 HM5216165TT HM5216165TT-10 HM5216165TT-12 HM5216165TT-15
Text: HM5216165 Series 524,288-word x 16-bit × 2-bank Synchronous Dynamic RAM ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
288-word
16-bit
ADE-203-280
Hz/83
Hz/66
HM5216165TT
TTP-50D)
Hitachi DSA00776
HM5216165TT-10
HM5216165TT-12
HM5216165TT-15
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HM5216165
Abstract: HM5216165TT HM5216165TT-10H HM5216165TT-12 HM5216165-10H Hitachi DSA00196
Text: HM5216165 Series 524,288-word x 16-bit × 2-bank Synchronous Dynamic RAM ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
288-word
16-bit
ADE-203-280B
Hz/83
HM5216165-10H
HM5216165-10H)
HM5216165-10/15
HM5216165TT
HM5216165TT-10H
HM5216165TT-12
Hitachi DSA00196
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HM5216165TT-10H
Abstract: HM5216165TT-12 HM5216165TT-15 HM5216165 HM5216165TT HM5216165TT-10 Hitachi DSA0015
Text: HM5216165 Series 524,288-word x 16-bit × 2-bank Synchronous Dynamic RAM ADE-203-280A Z Rev. 1.0 Dec. 20, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
288-word
16-bit
ADE-203-280A
Hz/83
Hz/66
HM5216165-10H
HM5216165-10H)
HM5216165TT-10H
HM5216165TT-12
HM5216165TT-15
HM5216165TT
HM5216165TT-10
Hitachi DSA0015
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HM5216165
Abstract: HM5216165TT HM5216165TT-10H HM5216165TT-12
Text: HM5216165 Series EO 16 M LVTTL Interface SDRAM 512-kword x 16-bit × 2-bank 100 MHz/83 MHz L E0167H10 (Ver. 1.0) (Previous ADE-203-280C (Z) Jun. 12, 2001 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2
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HM5216165
512-kword
16-bit
Hz/83
E0167H10
ADE-203-280C
HM5216165TT
HM5216165TT-10H
HM5216165TT-12
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Hitachi DSA00164
Abstract: No abstract text available
Text: HM5216165 Series 16 M LVTTL Interface SDRAM 512-kword x 16-bit × 2-bank 100 MHz/83 MHz ADE-203-280C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
512-kword
16-bit
Hz/83
ADE-203-280C
HM5216165-10H)
HM5216165-10/15
Hitachi DSA00164
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24C02
Abstract: HB526A164DB-10 HB526A164DB-12 HB526A164DB-15 HM5216165TT C100-C107 Hitachi DSA0015 DQ381 Nippon capacitors
Text: HB526A164DB Series 524,288-word x 64-bit × 2-bank Synchronous Dynamic RAM Module ADE-203-606 Z Preliminary Rev. 0.0 Jun. 18, 1996 Description The HB526A164DB is a 512k × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit SDRAM (HM5216165TT) sealed in TSOP
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HB526A164DB
288-word
64-bit
ADE-203-606
16-Mbit
HM5216165TT)
24C02)
HB526A164DB
144-pin
24C02
HB526A164DB-10
HB526A164DB-12
HB526A164DB-15
HM5216165TT
C100-C107
Hitachi DSA0015
DQ381
Nippon capacitors
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TSB11C01
Abstract: TSB12C01APZ S200 S400 TSB12C01A
Text: 1394 Link Layer Controller chip TSB12C01A Errata: Last Changed on 07/06/96 - bsh, rgg 0. Electrical isolation as described in Appendex J of IEEE 1394-1995 is not supported by the TSB12C01APZ . TI has an improved isolation technique, that is the recommended isolation solution.
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TSB12C01A)
TSB12C01APZ
12C01A
TSB11C01.
TSB11C01
TSB12C01APZ
S200
S400
TSB12C01A
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Hitachi DSA00174
Abstract: Nippon capacitors
Text: HB52RD168DB-F 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADE-203-1097 (Z) Rev. 0.0 Sep. 10, 1999 Description The HB52RD168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line
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HB52RD168DB-F
16-Mword
64-bit,
PC100
ADE-203-1097
HB52RD168DB
64-Mbit
HM5264405FTB)
HB52RD168DB
144-pin
Hitachi DSA00174
Nippon capacitors
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Philips 3-Wire bus
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TD7623AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7623AFN 3-WIRE AND |2C BUS SYSTEM, 2.3GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR CATV The TD7623AFN can be combined with a micro CPU to create a highly functional frequency synthesizer. The
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TD7623AFN
TD7623AFN
27-bit
50kHz,
250kHz,
SSOP16-P-225-0
Philips 3-Wire bus
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Nippon capacitors
Abstract: hitachi AND 1996 AND sdram
Text: HB526A164DB Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-606 Z Preliminary Rev. 0.0 Jun. 18, 1996 Description The HB526A164DB is a 512k x 64 x 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit SDRAM (HM5216165TT) sealed in TSOP
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HB526A164DB
288-word
64-bit
ADE-203-606
16-Mbit
HM5216165TT)
24C02)
144-pin
Nippon capacitors
hitachi AND 1996 AND sdram
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X-TAL reference
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TD7624AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T• n 7a f i 7 A■ m A SILICON MONOLITHIC F m ■ Nmm 3-W IRE A N D |2C BUS S Y S T E M , 1.3 G H z D IRECT T W O M O D U LU S-TYP E F R EQ U EN C Y SYN TH ESIZER FOR TV A N D C A TV
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TD7624AFN
TD7624AFN
18-bit
19-bit
SSOP16-P-225-0
23TYP
X-TAL reference
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Untitled
Abstract: No abstract text available
Text: • ñ53SbGS DDTSTTS bSH ■ SIEMENS BTS6 1 2 N1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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53SbGS
Lstems15*
GPT05M7
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Untitled
Abstract: No abstract text available
Text: HB526A264EN-10/12 1,048,576-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-485B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A264EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB526A264EN-10/12
576-word
64-bit
168-pin
ADE-203-485B
HB526A264EN
16Mbit
HM5216805TT)
24C02)
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TD7628FN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7628FN 3-WIRE AND |2C BUS SYSTEM, 1.3GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR TV AND CATV The TD7628FN can be combined with a micro CPU to create a highly functional frequency synthesizer. The
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TD7628FN
TD7628FN
18-bit
19-bit
SSOP16-P-225-0
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HB526A164EN
Abstract: No abstract text available
Text: H B 5 2 6 A 1 6 4 E N -1 0 /1 2 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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288-word
64-bit
168-pin
ADE-203-592
HB526A164EN
16Mbit
HM5216165TT)
24C02)
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Untitled
Abstract: No abstract text available
Text: MITEL MH89791 CEPT PCM 30 Transm it Equalizer Advance Information 9161-002-110-NA Features • Used with the MH89790 • Programmable equalization for different line lengths • 6dB loop around circuit Description The MH89791 is a programmable network for use
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MH89791
9161-002-110-NA
MH89790
MH89791
H89790
bE4T37D
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Untitled
Abstract: No abstract text available
Text: HB526A164EN-10/12 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary - Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB526A164EN-10/12
288-word
64-bit
168-pin
ADE-203-592
HB526A164EN
16Mbit
HM5216165TT)
24C02)
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74VHC125
Abstract: 74VHC125M 74VHC125MTC 74VHC125N 74VHC125SJ M14A M14D MTC14 VHC125
Text: S E M IC O N D U C T O R Revised March 1999 TM General Description The VHC125 contains four independent non-inverting buff ers with 3-STATE outputs. It is an advanced high-speed CMOS device fabricated with silicon gate CMOS technol ogy and achieves the high-speed operation similar to
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74VHC125
VHC125
74VHC125
74VHC125M
74VHC125MTC
74VHC125N
74VHC125SJ
M14A
M14D
MTC14
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Untitled
Abstract: No abstract text available
Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
288-word
16-bit
ADE-203-280
Hz/83
Hz/66
5216165TT
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Untitled
Abstract: No abstract text available
Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.
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HM5216165
288-word
16-bit
ADE-203-280B
Hz/83
HM5216165-1
HM5216165-10/15
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