BSC077N12NS3 G Search Results
BSC077N12NS3 G Price and Stock
Infineon Technologies AG BSC077N12NS3GATMA1MOSFET N-CH 120V 13.4/98A 8TDSON |
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BSC077N12NS3GATMA1 | Digi-Reel | 12,066 | 1 |
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BSC077N12NS3GATMA1 | 8,633 |
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BSC077N12NS3GATMA1 | Cut Tape | 5 |
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BSC077N12NS3GATMA1 | 1,559 |
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BSC077N12NS3GATMA1 | 44 |
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BSC077N12NS3GATMA1 | 1 |
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BSC077N12NS3GATMA1 | 1 |
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BSC077N12NS3GATMA1 | Cut Tape | 19,790 |
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BSC077N12NS3GATMA1 | 5,000 | 17 Weeks | 5,000 |
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BSC077N12NS3GATMA1 | 5,000 | 1 |
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BSC077N12NS3GATMA1 | 159,200 |
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Infineon Technologies AG BSC077N12NS3GXTTrans MOSFET N-CH 120V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC077N12NS3GATMA1) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC077N12NS3GXT | Reel | 16 Weeks | 5,000 |
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Infineon Technologies AG BSC077N12NS3 GMOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC077N12NS3 G | 22,806 |
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BSC077N12NS3 G | 895 |
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Infineon Technologies AG BSC077N12NS3GPOWER FIELD-EFFECT TRANSISTOR, 13.4A I(D), 120V, 0.0077OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC077N12NS3G | 716 |
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BSC077N12NS3G | 2 |
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BSC077N12NS3G | 154,000 |
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Others BSC077N12NS3G |
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BSC077N12NS3G | 2,684 |
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BSC077N12NS3 G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BSC077N12NS3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 120.0 V; RDS (on) (max) (@10V): 7.7 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 98.0 A; | Original | |||
BSC077N12NS3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 98A 8TDSON | Original |