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    Samtec Inc BBS-108-G-A

    CONN HEADER VERT 8POS 2.54MM
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    Samtec Inc IPBS-108-01-T-D-GP

    CONN HDR 16POS 0.165 TIN PCB
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    Mean Well ODFBS10-8

    PLUG-IN BRIDGE FOR DPT6 SERIES
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    Samtec Inc BBS-108-T-A

    CONN HEADER 8POS .100 PCB TIN
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    DigiKey BBS-108-T-A Tube 55 1
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    Mouser Electronics BBS-108-T-A 99
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    Newark BBS-108-T-A Bulk 289 1
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    Samtec Inc IPBS-108-01-T-S-GP

    .165" POWER MATE ISOLATED POWER
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    DigiKey IPBS-108-01-T-S-GP Tube 48 1
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    Mouser Electronics IPBS-108-01-T-S-GP 113
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    Find more BS108 price and stock on Findchips.com

    BS108 Datasheets (21)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    BS108
    		General Semiconductor DMOS Transistors (N-Channel) Original PDF
    BS108
    		Motorola 200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL Original PDF
    BS108
    		On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 1000 Original PDF
    BS108
    		On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level Original PDF
    BS108
    		Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    BS108
    		Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BS108
    		Vishay Telefunken TRANS MOSFET N-CH 240V 0.23A 3TO-226AA Original PDF
    BS108
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BS108
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BS108
    		Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Scan PDF
    BS108
    		Vishay N-CHANNEL ENHANCEMENT MODE TRANSISTOR Scan PDF
    BS108/01,126
    		Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 300MA SOT54 Original PDF
    BS108,126
    		Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 300MA SOT54 Original PDF
    BS108 AMO
    		NXP Semiconductors N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; ID DC: 0.3 A; VDSmax: 200 V Original PDF
    BS108AMO
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BS108/D
    		On Semiconductor 200 VOLTS N-HANNEL TMOS Original PDF
    BS108-D
    		On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Le Original PDF
    BS108G
    		On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level Original PDF
    BS108ZL1
    		On Semiconductor Small Signal MOSFET 250 mA, 200 V, Logic Level N-Channel TO-92 Original PDF
    BS108ZL1
    		On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 Original PDF

    BS108 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Contextual Info: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS N-Channel Enhancement Mode T his T M O S FET is d e s ig n e d fo r high v o lta g e , high sp e e d switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high


    OCR Scan     		BS108/D BS108 O-226AA) PDF

    BS108 relay driver

    Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
    Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 BS108/D BS108 relay driver BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D PDF

    MBB691

    Abstract: BS108 UBB073
    Contextual Info: • PhilipsSemiconductor« ^ hb53=l31 0DS3?at 27t m APX PHILIPS/DISCRETE b ? E D P " *» "* .p ~ m c Mlon N-channel enhancement mode vertical D-MOS transistor FEATURES c BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		E372h BS108 MBB691 BS108 UBB073 PDF

    BS108

    Contextual Info: BS108 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features_ • • High Breakdown V oltage High Input Im pedance • • • Fast Switching Speed Low D rain-Source O n-R esistance Specially Suited for Telephone Su TO-92 3tS Dim Min Max A 4.45 4.70


    OCR Scan     		BS108 MIL-STD-202, DS21801 BS108 PDF

    ITT DIODE 129

    Abstract: diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT
    Contextual Info: BS108 N-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input


    OCR Scan     		BS108 1000mA ITT DIODE 129 diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT PDF

    Contextual Info: BS108 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7


    Original     		BS108 MIL-STD-202, DS21801 PDF

    bs108 mosfet

    Abstract: mosfet to92 high current BS108 BS-108
    Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 bs108 mosfet mosfet to92 high current BS108 BS-108 PDF

    BS108

    Contextual Info: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS BS108 N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high


    Original     		BS108/D BS108 BS108 PDF

    8810

    Abstract: BS108 DS21801
    Contextual Info: BS108 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets KM h H TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — Mechanical Data_


    OCR Scan     		BS108 MIL-STD-202, DS21801 BS108 8810 PDF

    Contextual Info: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 BS108/D PDF

    Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL vDS PARAMETER MAX. UNIT


    OCR Scan     		BS108 PDF

    BP317

    Abstract: BS108 MBB692
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS108 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		BS108 SC13b SCA54 137107/00/01/pp8 BP317 BS108 MBB692 PDF

    bs108

    Abstract: MOTOROLA SEMICONDUCTOR FET FET TO-92 motorola power FET
    Contextual Info: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS BS108 N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high


    Original     		BS108/D BS108 BS108 O-226) BS108ZL1 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 MOTOROLA SEMICONDUCTOR FET FET TO-92 motorola power FET PDF

    Contextual Info: hb53T31 0D2372h a7b APX iN AUER PHILIPS/DISCRETE b7E D • N-channel enhancement mode vertical D-MOS transistor Philips Semiconductors Product specification BS108 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT 200 V


    OCR Scan     		hb53T31 0D2372h BS108 PDF

    BS108

    Contextual Info: BS108 Vishay Semiconductors formerly General Semiconductor DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) max. ∅ 0.022 (0.55) 0.098 (2.5) Features • • • • • • • • • • • High breakdown voltage


    Original     		BS108 O-226AA 10-May-02 BS108 PDF

    bs108 mosfet

    Abstract: BS108 relay driver BS108 BS108ZL1
    Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N–Channel TO–92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 r14525 BS108/D bs108 mosfet BS108 relay driver BS108 BS108ZL1 PDF

    BS108ZL1G

    Abstract: BS108 PPAP MANUAL bs108 mosfet
    Contextual Info: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 BS108/D BS108ZL1G BS108 PPAP MANUAL bs108 mosfet PDF

    Contextual Info: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TM OS BS108 N-Channel Enhancement Mode T his T M O S F E T is d e s ig n e d fo r high v o lta g e , high s p e e d switching applications such as line drivers, relay drivers, C M O S


    OCR Scan     		BS108/D BS108 108/D PDF

    DS21801

    Contextual Info: BS108 N–CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B Dim Min Max A


    Original     		BS108 MIL-STD-202, DS21801 PDF

    2106a

    Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
    Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108


    OCR Scan     		2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019 PDF

    bs108 mosfet

    Abstract: BS108G BS108ZL1G BS108 BS108ZL1 PPAP MANUAL
    Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 BS108/D bs108 mosfet BS108G BS108ZL1G BS108 BS108ZL1 PPAP MANUAL PDF

    Contextual Info: VISHAY BS108 /uT E M ir N-CHANNEL ENHANCEMENT MODE TRANSISTOR I POWER SEMICONDUCTOR J Features High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets TO-92 Dim Min Max A 4.45


    OCR Scan     		BS108 MIL-STD-202, DS21801 PDF

    BS108

    Contextual Info: BS108 DMOS Transistors N-Channel FEATURES TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) max. ∅ .022 (0.55) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance


    Original     		BS108 BS108 PDF

    PHC2300

    Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
    Contextual Info: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221


    OCR Scan     		2N7000 2N7002 BS107 BS107A BS108 BS170 BS250 BSH101 BSH102 BSH103 PHC2300 BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT PDF