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    BS 050 TRANSISTOR Search Results

    BS 050 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BS 050 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mos fet marking k4

    Abstract: VP5225 VP5225K4 l5 transistor
    Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF VP5225 O-252, DSFP-VP5225 NR053008 mos fet marking k4 VP5225 VP5225K4 l5 transistor

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Application-specific gate drive range:


    Original     		PDF PD60299 IRS212 IRS2127/IRS2128) IRS21271/IRS21281) IRS2127/IRS21271) IRS2128/IRS21281) IRS2127/IR2128) IRS21271/IR21280-002 IRS2127PbF IRS21271PbF

    IRS2127S

    Abstract: ge.462 008 2000.02 IRS2127SPbF
    Text: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60299 IRS212 IRS2127/IRS2128) IRS21271/IRS21281) IRS2127/IRS21271) IRS2128/IRS21281) IRS2127/IR2128) IRS2127PbF IRS21271PbF IRS2127SPbF IRS2127S ge.462 008 2000.02 IRS2127SPbF

    IR21281

    Abstract: IR2128 application notes IRS21271SPBF IRS2128PBF IRS2128
    Text: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60299 IRS212 IRS2127/IRS2128) IRS21271/IRS21281) IRS2127/IRS21271) IRS2128/IRS21281) IRS2127/IR2128) IRS21271/Iite IRS2127PbF IRS21271PbF IR21281 IR2128 application notes IRS21271SPBF IRS2128PBF IRS2128

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60299 IRS212 IRS2127/IRS2128) IRS21271/IRS21281) IRS2127/IRS21271) IRS2128/IRS21281) IRS2127/IR2128) IRS2127PbF IRS21271PbF IRS2127SPbF

    IR2128 application notes

    Abstract: IRS21271PBF IR2128 IR21281 PD60299 IRS2128PBF IRS2128
    Text: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60299 IRS212 IRS2127/IRS2128) IRS21271/IRS21281) IRS2127/IRS21271) IRS2128/IRS21281) IRS2127/IR2128) IRS21271/Isite IRS2127PbF IRS21271PbF IR2128 application notes IRS21271PBF IR2128 IR21281 PD60299 IRS2128PBF IRS2128

    Untitled

    Abstract: No abstract text available
    Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications


    Original     		PDF VP5225 O-252, DSFP-VP5225 NR053008

    Untitled

    Abstract: No abstract text available
    Text: TRANSDUCERS Solutions For Voltage, Current, Power & Frequency CURRENT SOLUTIONS An Advanced Line Of Precision Transducers: • True RMS • DC Sensing • Loop Powered • Self Powered • Active & Reactive Power TM www.crmagnetics.com sales@crmagnetics.com


    Original     		PDF transducer03a

    CR8300

    Abstract: No abstract text available
    Text: TRANSDUCERS Solutions For Voltage, Current, Power & Frequency CURRENT SOLUTIONS An Advanced Line Of Precision Transducers: • True RMS • DC Sensing • Loop Powered • Self Powered • Active & Reactive Power TM www.crmagnetics.com sales@crmagnetics.com


    Original     		PDF transducer03a CR8300

    2N2907A surface mount

    Abstract: 2N2907A HCT790
    Text: OPTEK Product Bulletin HCT790 May 1993 Surface Mount Quad PNP Transistor Type HCT790 -.200 5.OB .050 (1 27)REF 350 (8 BS) SO 050 (1.27) REP 1 200 (5.08) .075 (1.91) .085 (2. 16) — 075 (1.9]) DIMENSIONS ARE IN INCHES (MILLIMETERS) .063 (1.60) Feature Absolute Maximum Ratings (Ta = 25°C unless otherwise noted)


    OCR Scan     		PDF HCT790 HCT790 2N2907A MIL-S-19500 2N2907A 100MHz 100kHz 2N2907A surface mount

    Untitled

    Abstract: No abstract text available
    Text: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type


    OCR Scan     		PDF VPT05548 Q67000-S076 E6288 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    A1E transistor

    Abstract: No abstract text available
    Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107


    OCR Scan     		PDF Q67000-S078 E6288 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A1E transistor

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier Data Sheet No. PD -6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary • G ate drive supply range from 12 to 18V ■ Undervoltage lockout ■ Current detection and limiting loop to limit driven power transistor current


    OCR Scan     		PDF IR2121 IR2121 5M-1982 M0-047AC.

    Untitled

    Abstract: No abstract text available
    Text: 5ÖE D TELEDYNE COMPONENTS. Ï ö T i v t i Q S □a ob beja 3 CHQ2907 PNP QUAD AMPLIFIER Ä S i §Ji§ JAN, JANTX, JANTXV General Purpose_ _ _pending PA CKA G E OUTLINE Four PNP Transistors Similar to 2N2907 M19500/558-01 CONNECTION DIAGRAM


    OCR Scan     		PDF CHQ2907 2N2907 M19500/558-01 MIL-S-19500/558 M19500/558-02 CHQ2907 100kHz 02140U

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2111 IR2111 5M-1982 M0-047AC. 554S2

    Untitled

    Abstract: No abstract text available
    Text: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package


    OCR Scan     		PDF BSS98 Q62702-S053 Q62702-S517 Q62702-S635 E6288 E6296

    ss 3977

    Abstract: 600v plating phase rectifier diagram IRFBC40R ic ir2113
    Text: International 1@I]Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2113 IR2113 IRFPE50) IR2113S IRFBC20) IRFBC30) IRFBC40) ss 3977 600v plating phase rectifier diagram IRFBC40R ic ir2113

    Untitled

    Abstract: No abstract text available
    Text: BUZ 341 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated ' fé VPT0ÌI56 3 Pin 1 Pin 3 Pin 2 G S D Type Vds b flDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 n TO-218AA C67078-S3128-A2 Maximum Ratings


    OCR Scan     		PDF O-218AA C67078-S3128-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BSP 295 In fin e o n t«e h n o l o g i i t SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level * ‘'GS th = °-8 -20V Vbs fe BSP 295 50 V 1.8 A Type BSP 295 Ordering Code Q67000-S066 Type WDS(on) Package Marking 0.3 i l


    OCR Scan     		PDF Q67000-S066 OT-223 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    E 102H transistor

    Abstract: 20L08 SY 180/4 50/HK 102H transistor M151 TCC20L08 transistor A1C
    Text: H m m 'nm nr-tS^-* I r / l v f S 140 Commerce Drive f f f Montgomery ville, PA 18936-1013 P ro g re s s P o w e re d b y T e c h no log y Tel: 215 631-9840 TCC20L08 RF & MICROWAVE TRANSISTORS CLASS A MICROWAVE • ■ . ■ . FREQUENCY POWER OUT POWER GAIN


    OCR Scan     		PDF TCC20L08 120mA 20L08 TCC20L08 000prCMirilter4-40 050in. S88TCC20L08-03 E 102H transistor 20L08 SY 180/4 50/HK 102H transistor M151 transistor A1C

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.026C International I R Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2112 5M-1982 M0-047AC. 554S2

    Untitled

    Abstract: No abstract text available
    Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6


    OCR Scan     		PDF BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    1R2110S

    Abstract: 1rfbc20 1R2110 1RFPE50 IR2110 msc01aa ir2110 circuit DIAGRAM high side IGBT driver IR2110-1 IR2110-2
    Text: International iffll Rectifier Data Sheet No. PD-6.011E I p o l l V d i . - i n I I w HIGH AND LOW SIDE DRIVER Features Product Summary • F loa ting ch an ne l d esigned fo r bootstrap operation F u lly o pe ra tion al to +500V T ole ra nt to n egative tra n s ie n t voltage


    OCR Scan     		PDF 1R2110 PR0TUS10NS IR2110 714234-TELEX 1R2110S 1rfbc20 1RFPE50 msc01aa ir2110 circuit DIAGRAM high side IGBT driver IR2110-1 IR2110-2

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier Data Sheet No. PD-6.045C IR 2 1 0 3 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V


    OCR Scan     		PDF A/210 5M-1982 M0-047AC.