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    BROADBAND IMPEDANCE TRANSFORMATION Search Results

    BROADBAND IMPEDANCE TRANSFORMATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-200P Rochester Electronics Broadband RF power GaN HEMT Visit Rochester Electronics Buy
    CLF1G0035-100P Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060-30 Rochester Electronics LLC CLF1G0060-30 - 30W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-50 Rochester Electronics LLC CLF1G0035-50 - 50W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060S-10 Rochester Electronics LLC CLF1G0060S-10 - 10W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy

    BROADBAND IMPEDANCE TRANSFORMATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLS2731-10

    Abstract: AN98029 broadband impedance transformation
    Text: APPLICATION NOTE Broadband impedance matching for S-Band Transistors AN98029 Philips Semiconductors Broadband impedance matching for S-Band Transistors CONTENTS 1 INTRODUCTION 2 DESIGN METHOD 3 IMPEDANCE MEASUREMENT 4 FITTING DATA TO MODEL 5 LUMPED ELEMENT INPUT AND OUTPUT


    Original     		PDF AN98029 SCA57 BLS2731-10 AN98029 broadband impedance transformation

    An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

    Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
    Text: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T


    Original     		PDF AN-721, An Introduction to Broadband Impedance Transformation for RF Power Amplifiers transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors

    power amplifier transformer

    Abstract: "30 mhz" driver Amplifier SLOA100 6062a RF Signal Generator 715-10-1 adsl typical "bit error rate" avr-1x 3 25R2 4R22 THS6032
    Text: Application Report SLOA100 - November 2002 Active Output Impedance for ADSL Line Drivers Randy Stephens Member Group Technical Staff Broadband Amplifiers Systems Specialist High Performance Linear Products ABSTRACT Signal termination is very common in bidirectional communication systems. Termination


    Original     		PDF SLOA100 power amplifier transformer "30 mhz" driver Amplifier 6062a RF Signal Generator 715-10-1 adsl typical "bit error rate" avr-1x 3 25R2 4R22 THS6032

    footprint ceramic capacitor footprint 0402

    Abstract: No abstract text available
    Text: Model BD0922J75100A00 Rev A Ultra Low Profile 0805 Balun 75Ω to 100Ω Balanced Description The BD0922J75100A00 is a broadband low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets and any application requiring an impedance


    Original     		PDF BD0922J75100A00 BD0922J75100A00 footprint ceramic capacitor footprint 0402

    broadband impedance transformation

    Abstract: No abstract text available
    Text: Model BD0922J75100AHF Rev A Ultra Low Profile 0805 Balun 75Ω to 100Ω Balanced Description The BD0922J75100AHF is a broadband low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets and any application requiring an impedance


    Original     		PDF BD0922J75100AHF BD0922J75100AHF broadband impedance transformation

    AD8343ARUZ

    Abstract: broadband impedance transformation AD8343 BLM21P300S C11A C12A ETC1-1-13 HP8130 HP8648C TC1-1-13
    Text: DC-to-2.5 GHz High IP3 Active Mixer AD8343 High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB Input P1dB: 2.8 dBm Differential LO, IF and RF Ports 50 Ω LO input impedance


    Original     		PDF AD8343 AD8343ARU-REEL7 AD8343ARUZ1 AD8343ARUZ-REEL1 AD8343ARUZ-REEL71 AD8343-EVAL AD8343-EVALZ1 14-Lead AD8343ARUZ broadband impedance transformation AD8343 BLM21P300S C11A C12A ETC1-1-13 HP8130 HP8648C TC1-1-13

    Untitled

    Abstract: No abstract text available
    Text: DC-to-2.5 GHz High IP3 Active Mixer AD8343 High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB Input P1dB: 2.8 dBm Differential LO, IF and RF Ports 50 Ω LO input impedance


    Original     		PDF AD8343 AD8343ARUZ-REEL1 AD8343ARUZ-REEL71 AD8343-EVAL AD8343-EVALZ1 14-Lead

    AD8343ARUZ

    Abstract: LQW1608A tektronix 2230 AD8343 BLM21P300S C10A C10B C11A C11B HP8130
    Text: DC-to-2.5 GHz High IP3 Active Mixer AD8343 High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB Input P1dB: 2.8 dBm Differential LO, IF and RF Ports 50 Ω LO input impedance


    Original     		PDF AD8343 AD8343ARU-REEL7 AD8343ARUZ1 AD8343ARUZ-REEL1 AD8343ARUZ-REEL71 AD8343-EVAL AD8343-EVALZ1 14-Lead AD8343ARUZ LQW1608A tektronix 2230 AD8343 BLM21P300S C10A C10B C11A C11B HP8130

    LDB20C

    Abstract: ECT1-1-13 ERJ6GEYJR00V PANASONIC murata MA188R2J MA180R4B tektronix 2230 AD8343 AD8343ARU AD8343ARU-REEL AD8343ARU-REEL7
    Text: a FEATURES High-Performance Active Mixer Broadband Operation to 2.5 GHz Conversion Gain: 7.1 dB Input IP3: 16.5 dBm LO Drive: –10 dBm Noise Figure: 14.1 dB Input P1 dB: 2.8 dBm Differential LO, IF and RF Ports 50 ⍀ LO Input Impedance Single-Supply Operation: 5 V @ 50 mA Typical


    Original     		PDF AD8343 C01034 14-Lead RU-14 LDB20C ECT1-1-13 ERJ6GEYJR00V PANASONIC murata MA188R2J MA180R4B tektronix 2230 AD8343 AD8343ARU AD8343ARU-REEL AD8343ARU-REEL7

    HP8130

    Abstract: LDB20C murata MA188R2J AD8343 AD8343ARU AD8343ARU-REEL AD8343ARU-REEL7 AD8343-EVAL HP8648C RU-14
    Text: a FEATURES High-Performance Active Mixer Broadband Operation to 2.5 GHz Conversion Gain: 7.1 dB Input IP3: 16.5 dBm LO Drive: –10 dBm Noise Figure: 14.1 dB Input P1 dB: 2.8 dBm Differential LO, IF and RF Ports 50 ⍀ LO Input Impedance Single-Supply Operation: 5 V @ 50 mA Typical


    Original     		PDF AD8343 C01034 HP8130 LDB20C murata MA188R2J AD8343 AD8343ARU AD8343ARU-REEL AD8343ARU-REEL7 AD8343-EVAL HP8648C RU-14

    AD8342

    Abstract: ADL5561 TC2-1T 400M AD8351 AD8352 AD8370 AD8375 AD8342ACPZ-R21 1435d
    Text: Active Receive Mixer LF to 3 GHz AD8342 Broadband RF, LO, and IF ports Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Open-collector IF output port


    Original     		PDF AD8342 AD8342ACPZ-REEL7 AD8342ACPZ-R21 AD8342ACPZ-WP1 AD8342-EVALZ1 16-Lead D05352-0-7/09 AD8342 ADL5561 TC2-1T 400M AD8351 AD8352 AD8370 AD8375 AD8342ACPZ-R21 1435d

    Untitled

    Abstract: No abstract text available
    Text: Active Receive Mixer LF to 3 GHz AD8342 Broadband RF, LO, and IF ports Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Open-collector IF output port


    Original     		PDF AD8342 AD8342ACPZ-REEL7 AD8342ACPZ-R21 AD8342ACPZ-WP1 AD8342-EVALZ1 16-Lead D05352-0-7/09

    TC2-1T

    Abstract: AD8370 400M AD8342 AD8351 AD8352 AD8369
    Text: Active Receive Mixer LF to 2.4 GHz AD8342 Broadband RF, LO, and IF ports Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Open-collector IF output port


    Original     		PDF AD8342 instrumen-40 AD8342ACPZ-WP1 AD8342-EVALZ1 16-Lead CP-16-3 TC2-1T AD8370 400M AD8342 AD8351 AD8352 AD8369

    AD8342

    Abstract: 400M 700M AD8351 AD8369
    Text: Active Receive Mixer LF to 500 MHz AD8342 Broadband RF port: LF to 500 MHz Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Single-supply operation: 5 V @ 98 mA


    Original     		PDF AD8342 AD8342ACPZ-REEL71 AD8342ACPZ-R21 AD8342ACPZ-WP1 AD8342-EVAL 16-Lead D05352 AD8342 400M 700M AD8351 AD8369

    Broadband Class-E Power Amplifier Designed by Lumped-Element Network Transforms and GaN FETs

    Abstract: No abstract text available
    Text: Broadband Class-E Power Amplifier Designed by Lumped-element Network Transforms and GaN FETs IMS2015 TU1B-1 Broadband Class-E Power Amplifier g by y Lumped-Element p Network Designed Transforms and GaN FETs Ramon Beltran, PhD Newbury Park, CA 1 Broadband Class-E Power Amplifier Designed by Lumped-element


    Original     		PDF IMS2015 GP2001 GP2001Â Broadband Class-E Power Amplifier Designed by Lumped-Element Network Transforms and GaN FETs

    GaN amplifier

    Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
    Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation

    article.

    Abstract: UHF Amplifier Design Using Coaxial Transformers simulation files NONLINEAR MODEL LDMOS
    Text: From May 2003 High Frequency Electronics Copyright 2003 Summit Technical Media, LLC High Frequency Design BROADBAND DESIGN Broadband VHF/UHF Amplifier Design Using Coaxial Transformers By C. G. Gentzler and S.K. Leong Polyfet RF Devices T he desire of the


    Original     		PDF

    bd139 equivalent

    Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
    Text: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION


    Original     		PDF BLV861 AN98033 BLV861 SCA57 bd139 equivalent BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 linear handbook MGM734 860mhz rf amplifier circuit diagram

    bd139 equivalent transistor

    Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
    Text: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION


    Original     		PDF BLV862 AN98014 SCA57 bd139 equivalent transistor Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS

    MRF873

    Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
    Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and


    Original     		PDF AN1526/D AN1526 AN1526/D* MRF873 j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors

    Sawtek filter

    Abstract: RF2411 uhf receiver
    Text: TA0026  TA0026 The RF2411 General Purpose UHF Downconverter IC             1500MHz, as plotted in Figure 2. LNA reverse isolation Communication receivers are constructed using a superheterodyne architecture. The received signal frequency is converted to a lower “intermediate” frequency IF in one or more steps for efficient


    Original     		PDF TA0026 RF2411 1500MHz, Sawtek filter uhf receiver

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor
    Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances: Practical Considerations Prepared by: Alan Wood and Bob Davidson


    Original     		PDF AN1526/D AN1526 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor

    MRF873

    Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:


    Original     		PDF AN1526/D AN1526 MRF873 motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers

    SSB Receiver

    Abstract: RF2411 RF transistor gain 20dB
    Text: TA0026  TA0026 The RF2411 General Purpose UHF Downconverter IC 7KH 5  *HQHUDO 3XUSRVH 8+) 'RZQFRQYHUWHU ,& ,QWURGXFWLRQ Communication receivers are constructed using a superheterodyne architecture. The received signal frequency is converted to a lower “intermediate” frequency IF) in one or more steps for efficient


    Original     		PDF TA0026 RF2411 SSB Receiver RF transistor gain 20dB