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    BRIDGE GBU12K Search Results

    BRIDGE GBU12K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK126BG Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, WCSP4G Visit Toshiba Electronic Devices & Storage Corporation
    TCK127BG Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, Auto-discharge, WCSP4G Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    BRIDGE GBU12K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SELECTION GUIDE Bridge Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Bridge Rectifiers 6 SMD 6 Dual In-Line 7 Single In-Line 8 Round Type 14 Square Type 15 Three Phase 22 3 Introduction Constructed with both glass passivated die and silicon open junction die, Won-Top Electronics manufactures a


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    Untitled

    Abstract: No abstract text available
    Text: GBU12A GBU12M Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Version 2004-10-01 Nominal current Nennstrom 20.8 5.6 3.3 Alternating input voltage Eingangswechselspannung 18 5.3 3.8 Plastic case Kunststoffgehäuse 1.8 GBU . – ~ ~ + 0.5 1.8


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    GBU12A GBU12M UL94V-0 E175067 12a-1v) PDF

    GBU12D

    Abstract: bridge GBU12K GBU12k GBU12A GBU12B GBU12G GBU12J GBU12M
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2008-04-09 – 18.2±0.2 3.6±0.2 5.3 5.6 ±0.1 1.7±0.1 3.4 Nominal current Nennstrom GBU . ~ ~ + 1.8 1.1 Alternating input voltage Eingangswechselspannung


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    GBU12A GBU12M UL94V-0 E175067 12a-1v) GBU12D bridge GBU12K GBU12k GBU12A GBU12B GBU12G GBU12J GBU12M PDF

    Untitled

    Abstract: No abstract text available
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2008-02-07 Nominal current Nennstrom 22.1 3.4 1.7 18.4 5.3 5.6 3.5 – GBU . ~ ~ + 2.5 2.2 1.8 0.5 12 A Alternating input voltage Eingangswechselspannung


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    GBU12A GBU12M UL94V-0 E175067 12a-1v) PDF

    Untitled

    Abstract: No abstract text available
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2006-07-07 21.5 3.4 Nominal current Nennstrom ±0.7 Alternating input voltage Eingangswechselspannung 1.8 GBU . ~ ~ + 1.8 2.25 0.5 18 5.3 5.6 3.8 – 12 A


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    GBU12A GBU12M UL94V-0 E175067 12a-1v) PDF

    GBU12K

    Abstract: GBU12M GBU12D GBU12G GBU12J GBU12A GBU12B gbu 508
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2006-08-11 Nominal current Nennstrom 22.1 3.4 1.7 18.4 5.3 5.6 3.5 – GBU . ~ ~ + 2.5 2.2 1.8 0.5 12 A Alternating input voltage Eingangswechselspannung


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    GBU12A GBU12M UL94V-0 E175067 12a-1v) GBU12K GBU12M GBU12D GBU12G GBU12J GBU12A GBU12B gbu 508 PDF

    GBU12J

    Abstract: GBU12A GBU12B GBU12D GBU12G GBU12K GBU12M
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2006-08-11 Nominal current Nennstrom 22.1 3.4 1.7 18.4 5.3 5.6 3.5 – GBU . ~ ~ + 2.5 2.2 1.8 0.5 12 A Alternating input voltage Eingangswechselspannung


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    GBU12A GBU12M UL94V-0 E175067 12a-1v) GBU12J GBU12A GBU12B GBU12D GBU12G GBU12K GBU12M PDF

    Untitled

    Abstract: No abstract text available
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2012-10-08 ±0.2 18.2±0.2 – Nominal current Nennstrom ±0.7 5.3 5.6 3.6 1.7±0.1 3.4 21.5 ±0.1 GBU . ~ ~ + 2.2 Alternating input voltage Eingangswechselspannung


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    GBU12A GBU12M UL94V-0 E175067 E175067 12a-1v) PDF

    GBU12A

    Abstract: TS60A
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2010-03-31 – 5.3 5.6 3.6±0.2 18.2±0.2 21.5 ±0.1 1.7±0.1 3.4 Nominal current Nennstrom ±0.7 GBU . ~ ~ + 1.8 0.5 1.1 Alternating input voltage Eingangswechselspannung


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    GBU12A GBU12M UL94V-0 E175067 E175067 12a-1v) GBU12A TS60A PDF

    GBU12D

    Abstract: GBU12A GBU12B GBU12G GBU12J GBU12K GBU12M
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2010-03-31 – 5.3 5.6 3.6±0.2 18.2±0.2 21.5 ±0.1 1.7±0.1 3.4 Nominal current Nennstrom ±0.7 GBU . ~ ~ + 1.8 0.5 1.1 Alternating input voltage Eingangswechselspannung


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    GBU12A GBU12M UL94V-0 E175067 Underw00 12a-1v) GBU12D GBU12A GBU12B GBU12G GBU12J GBU12K GBU12M PDF

    GBU12D

    Abstract: GBU12A GBU12B GBU12G GBU12J GBU12K GBU12M GBU12
    Text: GBU12A DC COMPONENTS CO., LTD. THRU RECTIFIER SPECIALISTS R GBU12M TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 12 Amperes FEATURES * Ideal for printed circuit board * Surge overload rating: 240 Amperes peak


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    GBU12A GBU12M MIL-STD-202E, 100x100x1 GBU12D GBU12A GBU12B GBU12G GBU12J GBU12K GBU12M GBU12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GBU12A . GBU12M GBU12A . GBU12M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2013-12-10 GBU . ~ ~ + 2.2 +0.2 0.5 +0.1 1.1 +0.2 - 0.1 1.8 1.8+0.7 18.2 ±0.3 – Nominal current Nennstrom ±0.7 5.3 +0.5 5.6 3.6±0.2 1.7 ±0.1 3.4 21.5


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    GBU12A GBU12M UL94V-0 12a-1v) PDF

    gbu 12j

    Abstract: GBU12A
    Text: GBU12A GBU12M 12A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction A       Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability


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    GBU12A GBU12M gbu 12j GBU12A PDF

    1n5399 equivalent

    Abstract: 1N5408 equivalent 1N5401 equivalent 1N4004 or 1N5404 UF4007 equivalent BY255 equivalent 1n5402 equivalent KBPC2502FP HER305 equivalent 1N4936 equivalent
    Text: PRODUCT NEWS Part number crosses to Semikron's obsolete components Rectron Semiconductor is pleased to offer alernative components against the recent Semikron announcement of obsoleting many different part numbers and/ or series in equivalent or as near as possible package case styles.


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    1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1n5399 equivalent 1N5408 equivalent 1N5401 equivalent 1N4004 or 1N5404 UF4007 equivalent BY255 equivalent 1n5402 equivalent KBPC2502FP HER305 equivalent 1N4936 equivalent PDF