A-5962-6052-80
Abstract: avago marking -2 avago marking Avago Technologies
Text: PCN: A05-001-SPG-0A Product Change Notice Issue Date: 30 Nov 2005 Change Type: Product Marking, package labeling and shipping documentation change – Change from Agilent Technologies’ branding and logo to Avago Technologies branding and/or logo. Parts Affected:
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A05-001-SPG-0A
A-5962-6052-80
avago marking -2
avago marking
Avago Technologies
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Untitled
Abstract: No abstract text available
Text: Datasheet LGK-3901 3G/HD/SD Channel Branding Processor Promote your brand and efficiently deliver your channels. The Densité LGK-3901 from Grass Valley, a Belden Brand, is a low cost, modular channel branding processor, capable of inserting up to five layers of graphics into 3G/HD/SD. Three of the keying layers can be
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LGK-3901
LGK-3901
LGK3901
RCP-200
LGK-3901-3DRP-R
GVB-1-0400A-EN-DS
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MS-018
Abstract: MS-016 MS-026
Text: Package Drawing Designator: EA Type: 28-pin, square PLCC with internally fused pins for thermal dissipation 12.45 ±0.13 11.51 ±0.08 0.32 0.19 5.21 ±0.36 12.45 ±0.13 11.51 ±0.08 NNNNNNNNNNNN YYWW LLLLLLLLLLLL 1 5.21 ±0.36 A B 28 1 Standard Branding Reference View
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28-pin,
MS-018
MS-016
MS-026
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MS-026 TQFP
Abstract: MS-016 MS-018 MS-026
Text: Package Drawing Designator: EA Type: 28-pin, square PLCC with internally fused pins for thermal dissipation 12.45 ±0.13 11.51 ±0.08 0.32 0.19 5.21 ±0.36 12.45 ±0.13 11.51 ±0.08 NNNNNNNNNNNN YYWW LLLLLLLLLLLL 1 5.21 ±0.36 A B 28 1 Standard Branding Reference View
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28-pin,
MS-018
MS-026 TQFP
MS-016
MS-026
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Wacker
Abstract: Branding
Text: Branding for Emerging Service Providers The Next Generation Networks Teleconference Series for Service Provider Executives Van C. Smick Vice President Global Brand Management Nortel Networks • Van C. Smick is responsible for the overall strategy and implementation of Nortel
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AN9321
Abstract: HUFA75631SK8 HUFA75631SK8T MS-012AA TB334 109E diode
Text: HUFA75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models
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HUFA75631SK8
MS-012AA
75631SK8
AN9321
HUFA75631SK8
HUFA75631SK8T
MS-012AA
TB334
109E diode
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AN9321
Abstract: AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334 238e 109E diode
Text: HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models
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HUF75631SK8
MS-012AA
75631SK8
AN9321
AN9322
HUF75631SK8
HUF75631SK8T
MS-012AA
TB334
238e
109E diode
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Untitled
Abstract: No abstract text available
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
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sw-spdt
Abstract: C1242 GSM LNA C128 STB7003 SW SPDT c124 s c1281 SW SPDT FOOTPRINT
Text: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS
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STB7003
950MHz
1850MHz
1950MHz
MSOP10-EP
STB7003
sw-spdt
C1242
GSM LNA
C128
SW SPDT
c124 s
c1281
SW SPDT FOOTPRINT
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Untitled
Abstract: No abstract text available
Text: HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V JEDEC MS-012AA BRANDING DASH
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HUFA76407DK8T
MS-012AA
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kp 1006
Abstract: HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8
Text: HUFA76504DK8 Data Sheet 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 Packaging JEDEC MS-012AA 6400S BRANDING DASH K8 /Subject (60V, 0.072 1 2 Ohm, 3 4 4A, NChannel, Symbol Logic Level SOURCE1 (1) UltraFE GATE1 (2)
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HUFA76504DK8
MS-012AA
6400S
kp 1006
HUFA76504DK8
HUFA76504DK8T
MS-012AA
TB334
HARRIS SOP8
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STM901-30
Abstract: No abstract text available
Text: STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS . . . LINEAR POWER AMPLIFIER 860 - 900 MHz 26 VOLTS INPUT/OUTPUT 50 OHMS POUT = +44.7 dBm PEP GAIN = 35 dB MIN. CASE STYLE H141 ORDER CODE STM901-30 BRANDING STM901-30 PIN CONNECTION DESCRIPTION
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STM901-30
STM901-31
STM901-30
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SW SPDT
Abstract: C128 STB7003 C124 kit C124-2 c1281
Text: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS
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STB7003
950MHz
1850MHz
1950MHz
MSOP10-EP
STB7003
SW SPDT
C128
C124
kit C124-2
c1281
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Untitled
Abstract: No abstract text available
Text: STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS . . . LINEAR POWER AMPLIFIER 860 - 900 MHz 26 VOLTS INPUT/OUTPUT 50 OHMS P OU T = +44.7 dBm PEP GAIN = 35 dB MIN. CASE STYLEH141 ORDER CODE STM901-30 BRANDING STM901-30 PIN CONNECTION DESCRIPTION
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STM901-30
STYLEH141
STM901-30
STM901-31
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Untitled
Abstract: No abstract text available
Text: HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2
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HUFA76407DK8
MS-012AA
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AN9321
Abstract: AN9322 HUF76407DK8 HUF76407DK8T MS-012AA TB334 76407dk8
Text: HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2
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HUF76407DK8
MS-012AA
AN9321
AN9322
HUF76407DK8
HUF76407DK8T
MS-012AA
TB334
76407dk8
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ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
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AN7254
Abstract: AN7260 ITF86110DK8T MS-012AA TB370
Text: ITF86110DK8T Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V
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ITF86110DK8T
MS-012AA)
AN7254
AN7260
ITF86110DK8T
MS-012AA
TB370
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AN7254
Abstract: ITF86172SK8T MS-012AA TB370 vj04
Text: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = −10V - rDS(ON) = 0.023Ω, VGS = −4.5V
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ITF86172SK8T
MS-012AA)
AN7254
ITF86172SK8T
MS-012AA
TB370
vj04
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Untitled
Abstract: No abstract text available
Text: HUFA75631SK8 TM Data Sheet November 2000 File Number 4959 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models
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HUFA75631SK8
MS-012AA
HUFA75631SK8
MS-012AA
75631SK8
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AN9321
Abstract: HUFA76407DK8 HUFA76407DK8T MS-012AA TB334 diode 106E
Text: HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2
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HUFA76407DK8
MS-012AA
AN9321
HUFA76407DK8
HUFA76407DK8T
MS-012AA
TB334
diode 106E
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AN7254
Abstract: AN7260 ITF86110DK8T MS-012AA TB370
Text: ITF86110DK8T Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2000 Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V
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ITF86110DK8T
MS-012AA)
AN7254
AN7260
ITF86110DK8T
MS-012AA
TB370
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AN7254
Abstract: AN7260 ITF86130SK8T MS-012AA TB370
Text: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V
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ITF86130SK8T
MS-012AA)
AN7254
AN7260
ITF86130SK8T
MS-012AA
TB370
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76407DK8
Abstract: AN9321 HUFA76407DK8 HUFA76407DK8T MS-012AA TB334
Text: HUFA76407DK8 Data Sheet November 2000 File Number 4971 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH
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HUFA76407DK8
MS-012AA
76407DK8
AN9321
HUFA76407DK8
HUFA76407DK8T
MS-012AA
TB334
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