Contextual Info: BR3508 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)17

BRI508

Contextual Info: Silicon bridge rectifiers. 15 Amps, to 35 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Input Forward Rectified Voltage Current Recommended TYPE I f AV> @ T c I ( °C (A) (V) Max. Forward Voltage Drop at Ta — 25 “C Max. Reverse

BR356L

Contextual Info: BRIDGE RECTIFIERS OPERATING AND STORAGE TEMPERATURE -55 to +125 TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ PRV @25 TA

BR3500

Abstract: BR3500M BR3501 BR3502 BR3504 BR3506 BR3508 BR3510 BR3510M BR50
Contextual Info: BR3500M - BR3510M SILICON BRIDGE RECTIFIERS BR50 PRV : 50 - 1000 Volts Io : 35 Amperes 0.728 18.50 0.688(17.40) FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free

Contextual Info: E I C 100547^ 0000027 SEMICONDUCTOR INC böE D 4flO EICS Avalanche bridge rectifiers. 25 Amps, to 50 Amps. T h e p la s tic m a te r ia l c a r r ie s U /L r e c o g n itio n 94 V -0 . O o > Type M ax A vg R ect C u rre n t @ T a R lo a d In p u t V o lta g e

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BR3500 - BR3510 SILICON BRIDGE RECTIFIERS

Contextual Info: E I C SEMICONDUCTOR INC fc.SE D • cin02 M7Eì D0 0 0 0 3 S 557 ■ EICS Glass passivated bridge rectifiers. 25 Amps, to 50 Amps. T h e p la s tic m a te r ia l c a r r i e s U /L re c o g n itio n 9 4 V - 0 Type M ax A vg R ect C u rre n t, IF(AV @ T ^ R lo a d

Contextual Info: BR3506W thru BR3516W Glass Passivated Single Phase Bridge Rectifiers VRRM 600 to 1600V IFAV 35 Amp Features y y Circuit y ~ - y y High thermal conductivity packge, electrically insulated case Centre hole fixing Glass passivated chips High IFSM Epoxy compound has classification

Contextual Info: BR3506 thru BR3516 Glass Passivated Single Phase Bridge Rectifiers VRRM 600 to 1600V IFAV 35 Amp Features y y Circuit y ~ - y y High thermal conductivity packge, electrically insulated case Centre hole fixing Glass passivated chips High IFSM Epoxy compound has classification

Contextual Info: Silicon Bridge Rectifiers BR10005-G Thru. BR5010-G Series Reverse Voltage: 50 to 1000V Forward Current: 10/15/25/35/50A RoHS Device Features BR -Surge overload -240~500 Amperes peak. METAL HEAT SINK -Low forward voltage drop. 0.442 11.23 0.424(10.77) 0.925(23.50)

bridge rectifier

Abstract: KBU2506
Contextual Info: BRIDGE RECTIFIER TYPE NO. Max.Reverse Voltage Max.Aver. Rect.Current Peak Fwd. Surge Current Max.Fwd. Voltage @25℃ & Rated Io VRM V Io(A) IFSM(A) Rated Io(A) VF(V) ABS2 200 0.8/1.0 30 0.4 ABS4 400 0.8/1.0 30 0.4 ABS6 600 0.8/1.0 30 ABS8 800 0.8/1.0 ABS10

CBR35-060P

Contextual Info: 25 lo AMPS 35 @ T a (°C) @ Tc (°C) IFSM (AMPS) 60 60 60 60 60 350 350 400 400 400 Urn% CASE C A S E FP C A S E FPW CASE F C A S E FP C A S E FPW 100 CBR25-010P C BR 25-010PW CBR35-010 CBR35-010P CBR35-010PW 200 CBR25-020P C BR25-020PW CBR35-020 CBR35-020P

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

diode BR3510

Abstract: BR3510 BR3500 BR3501 BR3502 BR3504 BR3506 BR3508 BR50
Contextual Info: BR3500 - BR3510 SILICON BRIDGE RECTIFIERS BR50 PRV : 50 - 1000 Volts Io : 35 Amperes 0.728 18.50 0.688(17.40) FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board