transistor 9018
Abstract: 9018 9018 transistor
Text: NPN SILICON TRANSISTOR 9018 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.31 W Tamb=25 Collector current A ICM : 0.05 Collector-base voltage V V BR CBO : 25 Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25
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400MHz
transistor 9018
9018
9018 transistor
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2sa1516
Abstract: 2SC3907
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications
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2SA1516
-180V
2SC3907
-180V
2sa1516
2SC3907
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2sA1516 transistor
Abstract: 2SA1516 transistor 2sc3907 2SC3907
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications
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2SA1516
-180V
2SC3907
-50mA
-180V
2sA1516 transistor
2SA1516
transistor 2sc3907
2SC3907
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2SA1104
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1104 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Designed for audio power amplifier applications
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2SA1104
-120V
-50mA;
-120V;
2SA1104
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transistor 2SA1215
Abstract: 2SA1215 2SC2921
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1215 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min) ·High Power Dissipation ·Complement to Type 2SC2921 APPLICATIONS ·For audio and general purpose applications
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2SA1215
-160V
2SC2921
-160V;
transistor 2SA1215
2SA1215
2SC2921
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2sa1105
Abstract: transistor 120v
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1105 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Designed for audio power amplifier applications
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2SA1105
-120V
Websitew25
-50mA;
-120V;
2sa1105
transistor 120v
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2sc2578 transistor
Abstract: 2SA1103 2SC2578
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1103 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2578 APPLICATIONS ·Designed for audio power amplifier applications
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2SA1103
-100V
2SC2578
-50mA;
-100V;
2sc2578 transistor
2SA1103
2SC2578
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2SC3519
Abstract: 2SA1386 2SA1386A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A APPLICATIONS
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2SA1386/A
-160V
-2SA1386
-180V
-2SA1386A
2SC3519/A
2SA1386
2SA1386A
2SC3519
2SA1386
2SA1386A
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2SA1065
Abstract: 2SC2489 transistor 2sa1065
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 APPLICATIONS
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2SA1065
-150V
2SC2489
-100mA;
2SA1065
2SC2489
transistor 2sa1065
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2sa1694 2sc4467
Abstract: transistor 2SC4467 2sa1694 2SC4467 transistor 2SA1694
Text: INCHANGE Semiconductor Product Specification 2SA1694 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4467 APPLICATIONS ·Designed for audio and general purpose applications
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2SA1694
-120V
2SC4467
-120V
2sa1694 2sc4467
transistor 2SC4467
2sa1694
2SC4467
transistor 2SA1694
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2SA1303
Abstract: 2SC3284 pnp transistor 5A 150V power transistor transistors equivalents
Text: INCHANGE Semiconductor Product Specification 2SA1303 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications
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2SA1303
-150V
2SC3284
-150V
2SA1303
2SC3284
pnp transistor 5A 150V
power transistor transistors equivalents
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2SB871
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB871 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -20V(Min) ·High Speed Switching ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A APPLICATIONS
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2SB871
2SB871
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2SC3857
Abstract: 2SA1493
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications
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2SA1493
-200V
2SC3857
-200V;
2SC3857
2SA1493
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2SA1386
Abstract: transistor 2sa1386 2SA1386A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A APPLICATIONS
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2SA1386/A
-160V
-2SA1386
-180V
-2SA1386A
2SC3519/A
2SA1386
2SA1386A
2SA1386
transistor 2sa1386
2SA1386A
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2SA1693
Abstract: 2SC4466
Text: INCHANGE Semiconductor Product Specification 2SA1693 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4466 APPLICATIONS ·Designed for audio and general purpose applications
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2SA1693
2SC4466
2SA1693
2SC4466
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2SC2487
Abstract: 2SA1063
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1063 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2487 APPLICATIONS
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2SA1063
-120V
2SC2487
-100mA;
2SC2487
2SA1063
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transistor 2sa1494
Abstract: TRANSISTOR 2sc3858 2sc3858 transistor 2SC3858 2sa1494 data sheet transistor 2sc3858 transistor pnp 12v 1a 2SC3858 2SA1494
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications
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2SA1494
-200V
2SC3858
-200V
transistor 2sa1494
TRANSISTOR 2sc3858
2sc3858 transistor
2SC3858
2sa1494
data sheet transistor 2sc3858
transistor pnp 12v 1a
2SC3858 2SA1494
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transistor 2sc3519
Abstract: 2SC3519 transistor 2sa1386 2SC3519A 2SA1386 isc 2sc3519a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS
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2SC3519/A
-2SC3519
-2SC3519A
2SA1386/A
2SC3519
2SC3519A
transistor 2sc3519
2SC3519
transistor 2sa1386
2SC3519A
2SA1386
isc 2sc3519a
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2SC4468
Abstract: 2SA1695
Text: INCHANGE Semiconductor Product Specification 2SA1695 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4468 APPLICATIONS ·Designed for audio and general purpose applications
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2SA1695
-140V
2SC4468
-140V
2SC4468
2SA1695
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2SA1494
Abstract: transistor 2sc3858 transistor pnp VCEO 12V Ic 1A 2SC3858 data sheet transistor 2sc3858 2SA1494 equivalent 2sc3858 transistor characteristics 2SC3858 transistor 2sa1494
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications
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2SA1494
-200V
2SC3858
-200V
2SA1494
transistor 2sc3858
transistor pnp VCEO 12V Ic 1A
2SC3858
data sheet transistor 2sc3858
2SA1494 equivalent
2sc3858 transistor
characteristics 2SC3858
transistor 2sa1494
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transistor 2sa1102
Abstract: transistor 2sC2577 2SA1102 2sc2577 2SC2577 transistor 12v TRANSISTOR AUDIO AMPLIFIER
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2577 APPLICATIONS ·Designed for audio power amplifier applications
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2SA1102
2SC2577
-50mA;
transistor 2sa1102
transistor 2sC2577
2SA1102
2sc2577
2SC2577 transistor
12v TRANSISTOR AUDIO AMPLIFIER
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transistor 2sa1386
Abstract: transistor 2sc3519 2SA1386 2SC3519
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1386 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3519 APPLICATIONS ·For audio and general purpose applications
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2SA1386
-160V
2SC3519
transistor 2sa1386
transistor 2sc3519
2SA1386
2SC3519
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2SA812
Abstract: marking M4
Text: RECTRON 2SA812 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.1 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC
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2SA812
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
2SA812
marking M4
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2N5449
Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127
Text: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO
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2N3694
2N5127
2N5131
2N5132
5N5451
TP5137
TP5139
TP5824
TP5825
TP5826
2N5449
MPS-K72
2N3693
2N5143
2N5447
k72 npn
k72 transistor
Three-Five
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