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    BR 9014 C TRANSISTOR Search Results

    BR 9014 C TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BR 9014 C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BR 9014

    Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


    Original     		PDF

    BR 9014

    Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


    Original     		PDF

    BR 9014

    Abstract: BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014
    Text: TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. BASE 0.4 W (Tamb=25℃) 3. COLLECTOR Collector current 0.1 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF S9014 BR 9014 BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014

    BR 9014 transistor

    Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


    Original     		PDF

    BR 9014

    Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


    Original     		PDF

    transistor 9014

    Abstract: BR 9014 BR 9014 c transistor 9014 c BR 9014 transistor "transistor" 9014 BR 9014 C TRANSISTOR C 9014 transistor 9014 to-92 data sheet transistor 9014 NPN
    Text: NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V BR CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified


    Original     		PDF 100mA, 30MHz transistor 9014 BR 9014 BR 9014 c transistor 9014 c BR 9014 transistor "transistor" 9014 BR 9014 C TRANSISTOR C 9014 transistor 9014 to-92 data sheet transistor 9014 NPN

    transistor c 9015

    Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		PDF 100mA, transistor c 9015 BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92

    BR 9014

    Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector


    Original     		PDF

    br 9015

    Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		PDF 100mA, br 9015 pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C

    BR 9015

    Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		PDF 100mA, BR 9015 transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor

    BR 9014

    Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		PDF 100mA, BR 9014 BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015

    design of sequential timer to switch on off

    Abstract: RDA 8810 Motorola 6008 connector IGBT DIMMER trailing edge teo spi BI 513 BR 9014 Ch 23 BV EI 304 3510 maxon DC RE RBS 6000 pin assignment serial cable lm 7804
    Text: UM10316 LPC29xx User manual Rev. 3 — 19 October 2010 User manual Document information Info Content Keywords LPC2917/01; LPC2919/01; LPC2926; LPC2927; LPC2929; LPC2921; LPC2923; LPC2925; LPC2930; LPC2939 User Manual, ARM9, CAN, LIN, USB Abstract This document extends the LPC29xx data sheets with additional details to


    Original     		PDF UM10316 LPC29xx LPC2917/01; LPC2919/01; LPC2926; LPC2927; LPC2929; LPC2921; LPC2923; LPC2925; design of sequential timer to switch on off RDA 8810 Motorola 6008 connector IGBT DIMMER trailing edge teo spi BI 513 BR 9014 Ch 23 BV EI 304 3510 maxon DC RE RBS 6000 pin assignment serial cable lm 7804

    IR power mosfet switching power supply

    Abstract: trailing SCHEMATIC dimmer 568AF IR2136 application note RDA 8810 marking code SM texas ARMv5TE usermanual datasheet Po 9038 LPC2927 LPC2929
    Text: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 01.01 — 14 July 2009 R R R LPC29xx User manual D D D UM10316 D FT FT A A R R D D D R A FT D R A Document information


    Original     		PDF LPC29xx UM10316 LPC2917/01; LPC2919/01; LPC2927; LPC2929; LPC2921; LPC2923; LPC2925; LPC2930; IR power mosfet switching power supply trailing SCHEMATIC dimmer 568AF IR2136 application note RDA 8810 marking code SM texas ARMv5TE usermanual datasheet Po 9038 LPC2927 LPC2929

    RBS 6000 pin assignment serial cable

    Abstract: sja2510 maxon EC-max SCR GATE DRIVER maxon dc motor 217-R LM 7804 K 9008 maxon modem maxon motor a max
    Text: UM10316 LPC29xx User manual Rev. 01 — 22 May 2009 User manual Document information Info Content Keywords LPC2917/01; LPC2919/01; LPC2927; LPC2929; LPC2921; LPC2923; LPC2925; LPC2930; LPC2939 User Manual, ARM9, CAN, LIN, USB Abstract This document extends the LPC29xx data sheets with additional details to


    Original     		PDF UM10316 LPC29xx LPC2917/01; LPC2919/01; LPC2927; LPC2929; LPC2921; LPC2923; LPC2925; LPC2930; RBS 6000 pin assignment serial cable sja2510 maxon EC-max SCR GATE DRIVER maxon dc motor 217-R LM 7804 K 9008 maxon modem maxon motor a max

    transistor D880 circuit diagram application

    Abstract: GP-07 BR17
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x 16-/32-Bit DDR2-667 transistor D880 circuit diagram application GP-07 BR17

    BR17

    Abstract: No abstract text available
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x+ 16-/32-Bit DDR2-667 BR17

    2e58

    Abstract: BR17
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x+ 16-/32-Bit DDR2-667 2e58 BR17

    BR17

    Abstract: No abstract text available
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x 16-/32-Bit DDR2-667 BR17

    BR17

    Abstract: No abstract text available
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x+ 16-/32-Bit DDR2-667 BR17

    BR17

    Abstract: No abstract text available
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x 16-/32-Bit DDR2-667 BR17

    BR17

    Abstract: No abstract text available
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original     		PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x+ 16-/32-Bit DDR2-667 BR17

    BR 9014 transistor

    Abstract: AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d
    Text: AP P LIC A TIO N NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X F E T is t h e t r a d e m a r k t o r I n t e r n a t i o n a l R e c t i f i e r P o w e r M O S F E T s By S. C L E M E N T E , B. PELLY, R. R U T T O N S H A , B. TAYLO R


    OCR Scan     		PDF 25kHz AN-946B BR 9014 transistor AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d

    Fairchild dtl catalog

    Abstract: Fairchild 9960 nixie driver fairchild micrologic MARKING code WMM RF transistor UL903 gi 9644 diode transistor lr 3303 mod 8 counter transistor H SD 965 7L UA726C
    Text: Fairchild Semiconductor Data Cataloq 1969 The Fairchild Semiconductor Data Catalog — an all-inclusive volume of product infor mation covering diodes, transistors * 9^ and linear integrated circuits, MSI and LSI devices from the world’s Ingest supplier


    OCR Scan     		PDF BR-BR-0034-58 Fairchild dtl catalog Fairchild 9960 nixie driver fairchild micrologic MARKING code WMM RF transistor UL903 gi 9644 diode transistor lr 3303 mod 8 counter transistor H SD 965 7L UA726C

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485