Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range
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8550S
-50mA
-500mA
-500mA,
-20mA
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO:
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8550S
-50mA
-500mA
-500mA,
-20mA
30MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO:
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8550SS
-800mA,
-50mA
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datasheet of ic 555
Abstract: IC 555 datasheet ic 555 8550S
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range
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8550S
O--92
-100A
30MHz
270TYP
050TYP
datasheet of ic 555
IC 555
datasheet ic 555
8550S
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8550SS
Abstract: transistor 8550ss IC800 ic 800 IB-80
Text: 8550SS 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO: 3. BASE Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃
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8550SS
-800mA,
-50mA
8550SS
transistor 8550ss
IC800
ic 800
IB-80
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PDF
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8550S
Abstract: 8550s* Transistor
Text: 8550S 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3.BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
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8550S
-50mA
-500mA
-500mA,
-20mA
30MHz
8550S
8550s* Transistor
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PDF
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8550SS
Abstract: transistor 8550ss
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR（ PNP ） TO—92 FEATURES Power dissipation PCM : 1W （Tamb=25℃） 1.EMITTER Collector current ICM: -1.5 A Collector-base voltage 2. COLLECTOR 3. BASE
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8550SS
O--92
270TYP
050TYP
8550SS
transistor 8550ss
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Untitled
Abstract: No abstract text available
Text: 8550S PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.5±0.2 Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current ICM: 3.5 ±0.2 4.55±0.2 FEATURES
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8550S
01-Jun-2002
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PDF
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8550S
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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8550S
-100uA,
-50mA
-500mA
-500mA,
-20mA
30MHz
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PDF
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NPN transistor 8050s
Abstract: 8050S 8550S
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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8050S
8550S
500mA
500mA,
30MHz
NPN transistor 8050s
8050S
8550S
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PDF
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8550S
Abstract: No abstract text available
Text: 8550S PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25
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8550S
-500mA
-500mA,
-50mA
-20mA
30MHz
-100uA,
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PDF
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8050S Transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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8050S
8550S
500mA
500mA,
30MHz
8050S Transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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8550SS
-100mA
-800mA
-800mA
-80mA
-50mA
30MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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8550SS
-100mA
-800mA
-800mA,
-80mA
-10mA
-50mA
-30MHZ
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol
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8550SS
-100mA
-800mA
-800mA,
-80mA
-10mA
-50mA
-30MHZ
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PDF
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8050S
Abstract: No abstract text available
Text: 8050S NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features Complimentary to 8550S Collector current: IC=0.5A 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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8050S
25MAX
8550S
500mA
500mA,
30MHz
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transistor+8550ss
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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8550SS
-100mA
-800mA
-800mA,
-80mA
-10mA
-50mA
-30MHZ
transistor+8550ss
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BR 8550D
Abstract: 8550C 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D PNP 8550 NPN Transistor br 8550c NPN Transistor transistor 8550D BR 8550 D
Text: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
BR 8550D
8550C
8550D transistor
br 8550 NPN Transistor
8550D
transistor 8550D PNP
8550 NPN Transistor
br 8550c NPN Transistor
transistor 8550D
BR 8550 D
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BR 8550D
Abstract: 8550D transistor 8550c st 8550d 8550d BR 8550 he 8550d transistor 8550D transistor 8550D PNP transistor 8550
Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.
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8550C
8550D
BR 8550D
8550D transistor
8550c
st 8550d
8550d
BR 8550
he 8550d
transistor 8550D
transistor 8550D PNP
transistor 8550
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BR 8550
Abstract: BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c
Text: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector
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8550C
8550D
BR 8550
BR 8550 D
BR 8550D
8550c
8550D
he 8550d
PNP 8550
8550 pnp transistor
8550D transistor
br 8550 c
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PDF
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8550D transistor
Abstract: br 8550 NPN Transistor BR 8550 D 8550C 8550D BR 8550D BR 8550 BR 8050 BR 8050 D 8550 NPN Transistor
Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
800mA
800mA,
8550D transistor
br 8550 NPN Transistor
BR 8550 D
8550C
8550D
BR 8550D
BR 8550
BR 8050
BR 8050 D
8550 NPN Transistor
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PDF
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8550D
Abstract: BR 8550 D 8550c 8550D transistor br 8550 NPN Transistor BR 8550D 8550 NPN Transistor 8550 pnp he 8550d BR 8050
Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
800mA
800mA,
8550D
BR 8550 D
8550c
8550D transistor
br 8550 NPN Transistor
BR 8550D
8550 NPN Transistor
8550 pnp
he 8550d
BR 8050
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s 8550 d
Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
Text: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V
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OCR Scan
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OT-23
8550LT
SS8550LT1
s 8550 d
s8550LT1
8550 sot-23 pnp
SS8550LT1
SS8550
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PDF
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2TY marking
Abstract: s8550lt1 marking 2TY 8550LT1 8550L
Text: M C C S O T -2 3 P la s tic -E n c a p s u ia te T r a n s is t o r s ^ ^ 1.BASE 2 .EMITTER 3.COLLECTOR S 8550LT1 TR A N SISTO R PNP FEATURES Power dissipation PCM: 0.3 W (T a m b = 2 5 r) C ollector current ICM: - 0 .5 A C ollector-base voltage V(BR)CBO:
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OCR Scan
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8550LT1
S8550LT1
S8550LT1
2TY marking
marking 2TY
8550L
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PDF
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