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    BR 8 TRANSISTOR Search Results

    BR 8 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BR 8 TRANSISTOR Datasheets Context Search

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    Text: 2SC4931 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)8 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC4931

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    Text: 2SC4930 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)8 V(BR)CBO (V) I(C) Max. (A)70m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC4930

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    Text: SD1534-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)5.5 Absolute Max. Power Diss. (W)218 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF SD1534-8

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    Text: LTE42012R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)800 Absolute Max. Power Diss. (W)8¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF LTE42012R

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    Text: SD1540-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)22 Absolute Max. Power Diss. (W)875 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF SD1540-8

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    Text: SD1526-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)21 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF SD1526-8

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    Text: 2SK286 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100‚ Minimum Operating Temp (øC)


    Original     		PDF 2SK286

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    Text: 2SK175 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A)8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		PDF 2SK175

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    Text: MTP2P45E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-65


    Original     		PDF MTP2P45E

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    Text: MJD122-1 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.1k


    Original     		PDF MJD122-1

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    Text: ZVN4206GV Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)


    Original     		PDF ZVN4206GV

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    Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


    Original     		PDF IXGH30N60AU1 Junc-Case620m delay100nà time200nà time500nÃ

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    Text: AT41511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)0.2m @V(CBO) (V) (Test Condition)8


    Original     		PDF AT41511

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    Text: 2SB886 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)8 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.5k


    Original     		PDF 2SB886 Freq20M

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    Text: KSH127 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1k h(FE) Max. Current gain.12k


    Original     		PDF KSH127

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    Abstract: No abstract text available
    Text: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


    Original     		PDF IXGH30N60U1 Junc-Case620m delay100nà time200nà time500nÃ

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    Text: ECG2315 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)200 V(BR)CBO (V) I(C) Max. (A)8 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.


    Original     		PDF ECG2315

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    Text: MJD127-1 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.1k


    Original     		PDF MJD127-1

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    Text: 2SD1196 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)8 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.5k


    Original     		PDF 2SD1196 Freq20M

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    Abstract: No abstract text available
    Text: KSH122 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1k h(FE) Max. Current gain.12k


    Original     		PDF KSH122

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    Text: BFR540 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8


    Original     		PDF BFR540

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    Text: ZVN4206G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)-55


    Original     		PDF ZVN4206G

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    Text: BFG540 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8


    Original     		PDF BFG540

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    Text: CA3246M Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)8 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF CA3246M