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    BR 6500 Search Results

    BR 6500 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    165-00SL Coilcraft Inc General Purpose Inductor, 0.009uH, Air-Core, 2323 Visit Coilcraft Inc
    165-00L Coilcraft Inc General Purpose Inductor, 0.009uH, Air-Core, 2020 Visit Coilcraft Inc
    165-00A06SL Coilcraft Inc Variable Inductor, 0.009uH Min, 0.009uH Max, Aluminum-Core, Shielded, 2323, ROHS COMPLIANT Visit Coilcraft Inc
    165-00A06L Coilcraft Inc Variable Inductor, 0.009uH Min, 0.009uH Max, Aluminum-Core, Unshielded, 2020, ROHS COMPLIANT Visit Coilcraft Inc
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    BR 6500 Price and Stock

    Vishay Intertechnologies RS02BR6500FE12

    RS-2B .65 1% E12 e3 - Bulk (Alt: RS02BR6500FE12)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RS02BR6500FE12 Bulk 10 Weeks 100
    • 1 -
    • 10 -
    • 100 $2.31525
    • 1000 $1.30782
    • 10000 $1.24335
    Buy Now

    Vishay Intertechnologies RS02BR6500FB12

    RS-2B .65 1% B12 - Bulk (Alt: RS02BR6500FB12)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RS02BR6500FB12 Bulk 10 Weeks 100
    • 1 -
    • 10 -
    • 100 $2.55535
    • 1000 $1.4484
    • 10000 $1.377
    Buy Now

    Alpha Wire 461816 BR002

    Hook-up Wire 461816 BROWN 500 FT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 461816 BR002 1
    • 1 $115.75
    • 10 $97.97
    • 100 $76.27
    • 1000 $76.27
    • 10000 $76.27
    Buy Now

    Alpha Wire 9316 BR002

    Coaxial Cables RG316/U 500'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 9316 BR002
    • 1 $1142.86
    • 10 $1142.86
    • 100 $1142.86
    • 1000 $1142.86
    • 10000 $1142.86
    Get Quote

    Alpha Wire 461626 BR002

    Hook-up Wire HU WIRE PVC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 461626 BR002
    • 1 $154.82
    • 10 $128.78
    • 100 $112.98
    • 1000 $112.98
    • 10000 $112.98
    Get Quote

    BR 6500 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISO 8015

    Abstract: HYS72D128300HBR-5-C PC2700R-25331 TFBGA 117-pin 6n25 cmos 4070 PC2700R-25331-F0 HYS72D64301HBR-5-C DDR400 HYS72D64301HBR
    Text: August 2007 HYS72D 64301H B R– [ 5 / 6 ] – C HYS72D 128300 H BR– [ 5 / 6 ] – C HYS72D 128321 H BR– [ 5 / 6 ] – C HYS72D256x20HBR–[5/6]–C 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM DDR SDRAM


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    PDF HYS72D 64301H HYS72D256x20HBR­ HYS72D64301HBR­ HYS72D128300HBR­ HYS72D128321HBR­ ISO 8015 HYS72D128300HBR-5-C PC2700R-25331 TFBGA 117-pin 6n25 cmos 4070 PC2700R-25331-F0 HYS72D64301HBR-5-C DDR400 HYS72D64301HBR

    2SB1587

    Abstract: No abstract text available
    Text: ^Ss.mi-dondu.cto^ ., U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1587 Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min)


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    PDF 2SB1587 -150V 2SD2438 2SB1587

    2SD2558

    Abstract: 2sd25
    Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A


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    PDF 2SD2558 FM100 100max 200min 15typ 110typ 2SD2558 2sd25

    2SD2558

    Abstract: No abstract text available
    Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A


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    PDF 2SD2558 FM100 100max 200min 15typ 110typ 2SD2558

    2SB1647

    Abstract: No abstract text available
    Text: !j£Ti£ty ^s-rni-dondudtoi ^Pioducti, <_/ \^f 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1647 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min)


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    PDF 2SB1647 -150V -10mA) 2SD2560 -10mA -10mA, 2SB1647

    2SD2557

    Abstract: No abstract text available
    Text: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA


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    PDF 2SD2557 MT-100 100max 200min 2SD2557

    2SD2557

    Abstract: TEA1
    Text: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA


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    PDF 2SD2557 MT-100 100max 200min 2SD2557 TEA1

    2SD2401

    Abstract: 2SB1570
    Text: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 •Electrical Characteristics Unit VCBO 160 V ICBO VCB=160V 100max µA VCEO 150 V IEBO VEB=5V 100max µA V Ratings Unit VEBO 5 V V(BR)CEO IC=30mA 150min


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    PDF 2SD2401 2SB1570) MT-200 100max 150min 5000min 2SD2401 2SB1570

    REGULATOR IC FOR 150V

    Abstract: 12v 10a regulator ic 2SD2560 2SB1647 12v 10A regulator 12V 10A voltage regulators darlington power transistor 10a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= -10A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA)


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    PDF -150V -10mA) 2SD2560 -10mA -150V -10mA, REGULATOR IC FOR 150V 12v 10a regulator ic 2SD2560 2SB1647 12v 10A regulator 12V 10A voltage regulators darlington power transistor 10a

    zener diode 182

    Abstract: 1N5921B 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5956B DO-204AL
    Text: 1N5921B thru 1N5956B Crownpo Technology 1.5 Watt Silicon Zener Diodes V BR 6.8 to 200 V Peak Pulse Power 1.5 W DO-204AL (DO-41) Features • Plastic package has underwriters laboratory flammability classification 94v-0 • Low zener impedance • Excellent clamping capability


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    PDF 1N5921B 1N5956B DO-204AL DO-41) 94v-0 DO-204AL MIL-STD-202, 01-Apr-04 zener diode 182 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5956B

    GT21

    Abstract: No abstract text available
    Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V


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    PDF SUM60N08-07T 08-Apr-05 GT21

    2SB1587

    Abstract: 2SD2438 DSA0016506
    Text: 7 0 Ω E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions Ratings Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A


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    PDF 2SB1587 2SD2438) FM100 100max 150min 5000min 65typ 160typ 2SB1587 2SD2438 DSA0016506

    2SB1560

    Abstract: 2SD2390 DSA0016506
    Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB


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    PDF 2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 DSA0016506

    2SB1560

    Abstract: 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560
    Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) 2SB1560 Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB


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    PDF 2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560

    2SB1588

    Abstract: 2SD2439 DSA0016506
    Text: 7 0 Ω E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Ratings Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Ratings Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC


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    PDF 2SB1588 2SD2439) FM100 100max 150min 5000min 50typ 230typ 2SB1588 2SD2439 DSA0016506

    Untitled

    Abstract: No abstract text available
    Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available


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    PDF SUM60N08-07C SUM60N08-07C SUM60N08-07C-E3 11-Mar-11

    2SB1587

    Abstract: 2SD2438 transistor 2SB1587
    Text: 7 0 Ω E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions 2SB1587 Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A


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    PDF 2SB1587 2SD2438) FM100 100max 150min 5000min 65typ 160typ 2SB1587 2SD2438 transistor 2SB1587

    Untitled

    Abstract: No abstract text available
    Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS


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    PDF SUM60N08-07C 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS


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    PDF SUM60N08-07C 08-Apr-05

    SUM60N08-07C

    Abstract: No abstract text available
    Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available


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    PDF SUM60N08-07C SUM60N08-07C-E3 18-Jul-08 SUM60N08-07C

    S-2017

    Abstract: SUM60N08-07T D2T21
    Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V


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    PDF SUM60N08-07T S-20174--Rev. 18-Mar-02 S-2017 SUM60N08-07T D2T21

    2SB1588

    Abstract: 2SD2439
    Text: 7 0 Ω E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) 2SB1588 Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V 2SB1588 Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC


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    PDF 2SB1588 2SD2439) FM100 100max 150min 5000min 50typ 2SB1588 2SD2439

    2SD2438

    Abstract: 2SB1587 transistor ,12v ,Ic 1A ,NPN
    Text: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A


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    PDF 2SD2438 2SB1587) FM100 100max 150min 5000min 80typ 85typ 2SD2438 2SB1587 transistor ,12v ,Ic 1A ,NPN

    D0-218AA

    Abstract: No abstract text available
    Text: SURFADE MOUNT AUTOMOTIVE TRANSIENT SUPPRESSORS CASE TYPE: D0-218AA % BREAKDOWN VOLTAGE V BR MAX. PEAK IMPULSE CURRENT DEVICE TYPE VOLTS MIN at It mA ncvcnoc STAND-OFF VOLTAGE (Vwm) VOLTS SM5A27 24 10 22.0 0.20 50.0 40.0 SM6A27 24 10 22.0 0.50 60.0 40,0 SM8A27


    OCR Scan
    PDF D0-218AA SM5A27 SM6A27 SM8A27 6KA24 10/1000ns D0-218AA