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    BR 26 DIODE Search Results

    BR 26 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    BR 26 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKKD 26 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPACK 1 Rectifier Diode Modules SKKD 26 12-3 1223


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    Abstract: No abstract text available
    Text: SKB 26 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik !&8. !&&8 Power Bridge Rectifiers SKB 26 !!&8 ' 3 9 : 1; 3 </ = 5


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    Abstract: No abstract text available
    Text: 75 V, 26 A, 10.4 mΩ Low RDS ON N ch Trench Power MOSFET GKI07174 Features Package  V(BR)DSS - 75 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 14.5 mΩ max. (VGS = 10 V, ID = 18.9 A)


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    PDF GKI07174 GKI07174-DS

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    Abstract: No abstract text available
    Text: 75 V, 26 A, 17.7 mΩ Low RDS ON N ch Trench Power MOSFET GKI07301 Features Package  V(BR)DSS - 75 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 25.5 mΩ max. (VGS = 10 V, ID = 12.4 A)


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    PDF GKI07301 GKI07301-DS

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    Abstract: No abstract text available
    Text: 60 V, 26 A, 11.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06185 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)


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    PDF GKI06185 GKI06185-DS

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    Abstract: No abstract text available
    Text: 40 V, 26 A, 9.3 mΩ Low RDS ON N ch Trench Power MOSFET GKI04101 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A)


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    PDF GKI04101 GKI04101-DS

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    Abstract: No abstract text available
    Text: 60 V, 26 A, 11.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06185 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)


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    PDF GKI06185 GKI06185-DS

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    Abstract: No abstract text available
    Text: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)


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    PDF GKI04076 GKI04076-DS

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    Abstract: No abstract text available
    Text: 60 V, 26 A, 7.0 mΩ Low RDS ON N ch Trench Power MOSFET GKI06109 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 9.5 mΩ max. (VGS = 10 V, ID = 23.6 A)


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    PDF GKI06109 GKI06109-DS

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    Abstract: No abstract text available
    Text: 30 V, 26 A, 5.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI03061 Features Package  V(BR)DSS - 30 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 31.0 A)


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    PDF GKI03061 GKI03061-DS

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    Abstract: No abstract text available
    Text: 100 V, 26 A, 20.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI10301 Features Package  V(BR)DSS - 100 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A)


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    PDF GKI10301 GKI10301-DS

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    Abstract: No abstract text available
    Text: 40 V, 26 A, 4.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI04048 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 5.4 mΩ max. (VGS = 10 V, ID = 35.4 A)


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    PDF GKI04048 GKI04048-DS

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    Abstract: No abstract text available
    Text: 75 V, 26 A, 10.4 mΩ Low RDS ON N ch Trench Power MOSFET GKI07174 Features Package  V(BR)DSS - 75 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 14.5 mΩ max. (VGS = 10 V, ID = 18.9 A)


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    PDF GKI07174 GKI07174-DS

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    Abstract: No abstract text available
    Text: 60 V, 26 A, 7.0 mΩ Low RDS ON N ch Trench Power MOSFET GKI06109 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 9.5 mΩ max. (VGS = 10 V, ID = 23.6 A)


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    PDF GKI06109 GKI06109-DS

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    Abstract: No abstract text available
    Text: 30 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI03080 Features Package  V(BR)DSS - 30 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.5 mΩ max. (VGS = 10 V, ID = 25.0 A)


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    PDF GKI03080 GKI03080-DS

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    Abstract: No abstract text available
    Text: 75 V, 26 A, 17.7 mΩ Low RDS ON N ch Trench Power MOSFET GKI07301 Features Package  V(BR)DSS - 75 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 25.5 mΩ max. (VGS = 10 V, ID = 12.4 A)


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    PDF GKI07301 GKI07301-DS

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    Abstract: No abstract text available
    Text: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)


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    PDF GKI04076 GKI04076-DS

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    Abstract: No abstract text available
    Text: 30 V, 26 A, 3.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI03039 Features Package  V(BR)DSS - 30 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 4.0 mΩ max. (VGS = 10 V, ID = 47.2 A)


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    PDF GKI03039 GKI03039-DS

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    Abstract: No abstract text available
    Text: 40 V, 26 A, 4.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI04048 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 5.4 mΩ max. (VGS = 10 V, ID = 35.4 A)


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    PDF GKI04048 GKI04048-DS

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    Abstract: No abstract text available
    Text: 30 V, 26 A, 3.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI03039 Features Package  V(BR)DSS - 30 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 4.0 mΩ max. (VGS = 10 V, ID = 47.2 A)


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    PDF GKI03039 GKI03039-DS

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    Abstract: No abstract text available
    Text: 100 V, 26 A, 20.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI10301 Features Package  V(BR)DSS - 100 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A)


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    PDF GKI10301 GKI10301-DS

    Untitled

    Abstract: No abstract text available
    Text: 30 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI03080 Features Package  V(BR)DSS - 30 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.5 mΩ max. (VGS = 10 V, ID = 25.0 A)


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    PDF GKI03080 GKI03080-DS

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    Abstract: No abstract text available
    Text: 40 V, 26 A, 9.3 mΩ Low RDS ON N ch Trench Power MOSFET GKI04101 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A)


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    PDF GKI04101 GKI04101-DS

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    Abstract: No abstract text available
    Text: SKN 26 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Rectifier Diode ! !  9 < $ 9


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