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Text: SKKD 26 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPACK 1 Rectifier Diode Modules SKKD 26 12-3 1223
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Text: SKB 26 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik !&8. !&&8 Power Bridge Rectifiers SKB 26 !!&8 ' 3 9 : 1; 3 </ = 5
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Abstract: No abstract text available
Text: 75 V, 26 A, 10.4 mΩ Low RDS ON N ch Trench Power MOSFET GKI07174 Features Package V(BR)DSS - 75 V (ID = 100 µA) ID - 26 A RDS(ON) - 14.5 mΩ max. (VGS = 10 V, ID = 18.9 A)
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GKI07174
GKI07174-DS
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Text: 75 V, 26 A, 17.7 mΩ Low RDS ON N ch Trench Power MOSFET GKI07301 Features Package V(BR)DSS - 75 V (ID = 100 µA) ID - 26 A RDS(ON) - 25.5 mΩ max. (VGS = 10 V, ID = 12.4 A)
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GKI07301
GKI07301-DS
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Text: 60 V, 26 A, 11.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06185 Features Package V(BR)DSS - 60 V (ID = 100 µA) ID - 26 A RDS(ON) - 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)
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GKI06185
GKI06185-DS
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Abstract: No abstract text available
Text: 40 V, 26 A, 9.3 mΩ Low RDS ON N ch Trench Power MOSFET GKI04101 Features Package V(BR)DSS - 40 V (ID = 100 µA) ID - 26 A RDS(ON) - 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A)
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GKI04101
GKI04101-DS
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Abstract: No abstract text available
Text: 60 V, 26 A, 11.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06185 Features Package V(BR)DSS - 60 V (ID = 100 µA) ID - 26 A RDS(ON) - 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)
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GKI06185
GKI06185-DS
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Abstract: No abstract text available
Text: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package V(BR)DSS - 40 V (ID = 100 µA) ID - 26 A RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)
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GKI04076
GKI04076-DS
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Text: 60 V, 26 A, 7.0 mΩ Low RDS ON N ch Trench Power MOSFET GKI06109 Features Package V(BR)DSS - 60 V (ID = 100 µA) ID - 26 A RDS(ON) - 9.5 mΩ max. (VGS = 10 V, ID = 23.6 A)
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GKI06109
GKI06109-DS
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Text: 30 V, 26 A, 5.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI03061 Features Package V(BR)DSS - 30 V (ID = 100 µA) ID - 26 A RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 31.0 A)
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GKI03061
GKI03061-DS
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Text: 100 V, 26 A, 20.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI10301 Features Package V(BR)DSS - 100 V (ID = 100 µA) ID - 26 A RDS(ON) - 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A)
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GKI10301
GKI10301-DS
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Abstract: No abstract text available
Text: 40 V, 26 A, 4.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI04048 Features Package V(BR)DSS - 40 V (ID = 100 µA) ID - 26 A RDS(ON) - 5.4 mΩ max. (VGS = 10 V, ID = 35.4 A)
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GKI04048
GKI04048-DS
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Abstract: No abstract text available
Text: 75 V, 26 A, 10.4 mΩ Low RDS ON N ch Trench Power MOSFET GKI07174 Features Package V(BR)DSS - 75 V (ID = 100 µA) ID - 26 A RDS(ON) - 14.5 mΩ max. (VGS = 10 V, ID = 18.9 A)
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GKI07174
GKI07174-DS
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Text: 60 V, 26 A, 7.0 mΩ Low RDS ON N ch Trench Power MOSFET GKI06109 Features Package V(BR)DSS - 60 V (ID = 100 µA) ID - 26 A RDS(ON) - 9.5 mΩ max. (VGS = 10 V, ID = 23.6 A)
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GKI06109
GKI06109-DS
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Abstract: No abstract text available
Text: 30 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI03080 Features Package V(BR)DSS - 30 V (ID = 100 µA) ID - 26 A RDS(ON) - 8.5 mΩ max. (VGS = 10 V, ID = 25.0 A)
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GKI03080
GKI03080-DS
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Abstract: No abstract text available
Text: 75 V, 26 A, 17.7 mΩ Low RDS ON N ch Trench Power MOSFET GKI07301 Features Package V(BR)DSS - 75 V (ID = 100 µA) ID - 26 A RDS(ON) - 25.5 mΩ max. (VGS = 10 V, ID = 12.4 A)
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GKI07301
GKI07301-DS
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Abstract: No abstract text available
Text: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package V(BR)DSS - 40 V (ID = 100 µA) ID - 26 A RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)
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GKI04076
GKI04076-DS
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Text: 30 V, 26 A, 3.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI03039 Features Package V(BR)DSS - 30 V (ID = 100 µA) ID - 26 A RDS(ON) - 4.0 mΩ max. (VGS = 10 V, ID = 47.2 A)
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GKI03039
GKI03039-DS
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Abstract: No abstract text available
Text: 40 V, 26 A, 4.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI04048 Features Package V(BR)DSS - 40 V (ID = 100 µA) ID - 26 A RDS(ON) - 5.4 mΩ max. (VGS = 10 V, ID = 35.4 A)
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GKI04048
GKI04048-DS
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Abstract: No abstract text available
Text: 30 V, 26 A, 3.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI03039 Features Package V(BR)DSS - 30 V (ID = 100 µA) ID - 26 A RDS(ON) - 4.0 mΩ max. (VGS = 10 V, ID = 47.2 A)
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GKI03039
GKI03039-DS
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Abstract: No abstract text available
Text: 100 V, 26 A, 20.2 mΩ Low RDS ON N ch Trench Power MOSFET GKI10301 Features Package V(BR)DSS - 100 V (ID = 100 µA) ID - 26 A RDS(ON) - 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A)
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GKI10301
GKI10301-DS
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Abstract: No abstract text available
Text: 30 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI03080 Features Package V(BR)DSS - 30 V (ID = 100 µA) ID - 26 A RDS(ON) - 8.5 mΩ max. (VGS = 10 V, ID = 25.0 A)
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GKI03080
GKI03080-DS
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Abstract: No abstract text available
Text: 40 V, 26 A, 9.3 mΩ Low RDS ON N ch Trench Power MOSFET GKI04101 Features Package V(BR)DSS - 40 V (ID = 100 µA) ID - 26 A RDS(ON) - 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A)
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GKI04101
GKI04101-DS
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Abstract: No abstract text available
Text: SKN 26 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Rectifier Diode ! ! 9 < $ 9
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