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    BR 22 Y 2203 Search Results

    BR 22 Y 2203 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ME3220-393KLB Coilcraft Inc General Purpose Inductor, 39uH, 10%, 1 Element, Ferrite-Core, SMD, 1211, ROHS COMPLIANT Visit Coilcraft Inc
    ME3220-333KXC Coilcraft Inc General Purpose Inductor, 33uH, 10%, 1 Element, SMD Visit Coilcraft Inc Buy
    ME3220-393KLC Coilcraft Inc General Purpose Inductor, 39uH, 10%, 1 Element, Ferrite-Core, SMD, 1211, ROHS COMPLIANT Visit Coilcraft Inc
    ME3220-333 Coilcraft Inc Power inductor, 10/20% tol, SMT, RoHS Visit Coilcraft Inc
    ME3220-333KL Coilcraft Inc Power inductor, 10/20% tol, SMT, RoHS Visit Coilcraft Inc

    BR 22 Y 2203 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc815

    Abstract: bc815 transistor MAX232 for level converter ic 293D EIA232 MAX232 SO16L TFDS4000 TFDS4500 capacitor Vishay VJ 1206
    Text: TOIM3232 Not for new designs Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 is using a crystal clock 3.6864 MHz for


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    PDF OIM3232 OIM3232 RS232 D-74025 02-Apr-01 bc815 bc815 transistor MAX232 for level converter ic 293D EIA232 MAX232 SO16L TFDS4000 TFDS4500 capacitor Vishay VJ 1206

    bc815

    Abstract: "Infrared TRANSCEIVER" DATASHEET bc815 transistor capacitor Vishay VJ 1206 EIA232 MAX232 SO16L TFDS4000 TFDS4500 TFDS4500 IC
    Text: TOIM3232 Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 IC provides proper pulse shaping for


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 D-74025 01-Apr-99 bc815 "Infrared TRANSCEIVER" DATASHEET bc815 transistor capacitor Vishay VJ 1206 EIA232 MAX232 SO16L TFDS4000 TFDS4500 TFDS4500 IC

    CRCW

    Abstract: ic 293D 4000-Series
    Text: TOIM3232 Not for new designs Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 is using a crystal clock 3.6864 MHz for


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 18-Jul-08 CRCW ic 293D

    BC815-25

    Abstract: bc815 CRCW 1n4145 Temic ulc ic 293D
    Text: TOIM3232 Not for new designs Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 is using a crystal clock 3.6864 MHz for


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 08-Apr-05 BC815-25 bc815 CRCW 1n4145 Temic ulc ic 293D

    P6KE200A equivalent

    Abstract: P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE68A P4KE75 P4KE75A
    Text: 400 TO 1500 WATT UNIPOLAR TRANSIENT SUPPRESSOR FLIPDIE SUSSEX SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED SURFACE MOUNT UNIPOLAR FLIP-DIE 400 TO 5000 WATT MAXIMUM POWER HANDLING


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    AK 061

    Abstract: szu16 P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE68A P4KE75
    Text: 400 TO 1500 WATT BIPOLAR TRANSIENT SUPPRESSOR DUAL-DIE SUSSEX SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED SURFACE MOUNT BIPOLAR DUAL-DIE 400 TO 5000 WATT MAXIMUM POWER HANDLING


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    AK 061

    Abstract: P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE68A P4KE75 P4KE75A
    Text: 400 TO 1500 WATT UNIPOLAR TRANSIENT SUPPRESSOR FLIPDIE SUSSEX SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED SURFACE MOUNT UNIPOLAR FLIP-DIE 400 TO 5000 WATT MAXIMUM POWER HANDLING


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    MA 8920

    Abstract: 5KP25 KA 7015 SZU16 P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE75
    Text: 400 TO 5000 WATT UNIPOLAR TRANSIENT SUPPRESSOR DIE SUSSEX SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED UNIPOLAR DIE 400 TO 5000 WATT MAXIMUM POWER HANDLING REVERSE VOLTAGES - 6.8 TO 440 VOLTS


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    AK 061

    Abstract: Sussex Semiconductor P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE68A P4KE75
    Text: TM SUSSEX SEMICONDUCTOR, INC. TRANSIENT SUPPRESSOR DIE 7 7 400 TO 5000 WATT UNIPOLAR TRANSIENT SUPPRESSOR DIE SUSSEX SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR DIE


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    DIODE 1N649

    Abstract: SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a
    Text: TM SUSSEX SEMICONDUCTOR, INC. DIES AND CELLS SECTION 7 SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE PAGE NUMBER 1. TRANSIENT SUPPRESSOR DIES


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    PDF SZU35 SZZ35 SZUFD16 SZZD16 015in 009in 95Pb/5Sn DIODE 1N649 SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a

    uart with bit parity

    Abstract: No abstract text available
    Text: VISH A Y ▼ TOIM3232 _ Vishay Telefunken Integrated Interface Circuits ïiyWÂîr: ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 |xm Description


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 D-74025 -Apr-99 uart with bit parity

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    MRF534

    Abstract: MRF536 MC4049 mm4049
    Text: MOTOROLA SC XSTRS/R F 4bE T> b3b72S4 00=14230 MOTOROLA 4 «flOTb T=-3 l - o i • SEM ICO NDUCTOR I TECHNICAL DATA MM4049 MMC4049 MRF534 MRF536 The RF Line P N P S I L IC O N H IG H - F R E Q U E N C Y T R A N S I S T O R S . . . d e s ig n e d fo r u s e a s a h ig h -f r e q u e n c y cu rre n t m o d e sw itc h .


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    PDF b3b72S4 MM4049 MMC4049 MRF534 MRF536 MRF536 MC4049

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    2N2222A motorola

    Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
    Text: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc


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    PDF 2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola

    2n h 2222a

    Abstract: 2N2218 2222a 2N5581 ip 2222A
    Text: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s


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    PDF 2N2218A 2N2219 2N2222 2N2218, /2N2219 O-205AD) 2N2218 /19/19A/22/22A 2n h 2222a 2222a 2N5581 ip 2222A

    MRF5711LT1

    Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as


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    PDF O-226AA MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MPS571 MRF571 MRF5711LT1 MBR571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1

    2N835

    Abstract: transistor D 667 C
    Text: MOTOROLA SC XSTRS/R 12E F D I b3fc.7254 O G ñ b 22 3 fc> | T-3SW3 2N835' CA S E 22-03, ST YLE 1 TO-18 TO-206AA MAXIMUM RATINGS Sym bol V a lu e Collector-E m itter V oltag e V C EO 20 Vdc C o llector-E m itter V oltag e VCES 30 Vdc C o llector-B ase V olta g e


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    PDF 2N835' O-206AA) 2N835 transistor D 667 C

    LT3046

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LT3046 The RF Line NPN Silicon High Frequency Transistor 1C = ISO mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . d e s ig n e d fo r u ltra - lin e a r c o m m u n ic a tio n s o r in s tru m e n ta tio n a p p lic a t io n s .


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    PDF LT3046 LT3046

    EQUIVALENT OF SR240

    Abstract: XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274
    Text: tilEIT EK CORP Tbb3ö2b O O O lS lö 11E D □ 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS T - W - H - o S November 1989 1. Features 64-BIT FLO A T IN G -PO IN T D A T A PA T H F U L L FU N C T IO N 64-bit and 32-bit floating-point and 32-bit integer multiplier


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    PDF 64-BIT 32-bit EQUIVALENT OF SR240 XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ 32/40-Bit IEEE Floating-Point DSP Microprocessor ADSP-21020 FE A T U R E S Superscalar IEEE Floating-Point Processor Off-Chip Harvard Architecture M axim izes Signal Processing Performance 30 ns, 33.3 M IP S Instruction Rate. Single-Cycle


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    PDF 32/40-Bit ADSP-21020 1024-Point 32-Blt 40-Bit 32-Bit 80-Bit G-223

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    ml 081

    Abstract: BR571L MBR571LT1 21L2 marking motorola 039 MPS571 motorola J50 mbr5
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN S ilic o n H ig h -F re q u e n c y T ra n s is to rs D esigned for low noise, w ide dyn am ic range ro n t-e n d a m p lifie rs and low -noise V C O ’s Available in a surface-m ountable plastic package, as well as


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    PDF -226A RF5711LT1, A/500 MMBR571LT1) MRF5711LT1) Geometry71 MRF5711LT1 MRF571 MMBR571LT1 MPS571 ml 081 BR571L MBR571LT1 21L2 marking motorola 039 motorola J50 mbr5

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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