BR 13005 Search Results

BR 13005 Result Highlights (5)

Part	Manufacturer	Description
HD6413005F16V	Renesas Electronics Corporation	16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion)
PSASF4130051TR	Amphenol Communications Solutions	SAS PCIe,12G,Storage and server connector, 68pin, socket, Right Angle, reverse, Hybrid
FLAR41613005	Amphenol Communications Solutions	FLA Tool-less Rotatable Receptacle NEMA ANSI C136.41, 3 Power, 4 Signal, 16AWG, 105C
92813-005LF	Amphenol Communications Solutions	Minitek® 2.00mm, Board to Board, Unshrouded Vertical Stacking Header, Surface Mount, Double Row, 16 Positions, 2.00mm (0.079in) Pitch..
FLAR21413005	Amphenol Communications Solutions	FLA Tool-less Rotatable Receptacle NEMA ANSI C136.41, 3 Power, 2 Signal, 14AWG, 105C

BR 13005 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
13005 TRANSISTOR Abstract: 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte Text: 13005 Transistor NPN HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range	Original	O--220 100TYP 540TYP 13005 TRANSISTOR 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte	PDF
transistor 13005 Abstract: npn silicon transistor 13005 application note 13005 ST-13005 A 13005 A 13005 TO-220 13005 2 ST-13005 BR 13005 13005 st Text: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400	Original	O-220 transistor 13005 npn silicon transistor 13005 application note 13005 ST-13005 A 13005 A 13005 TO-220 13005 2 ST-13005 BR 13005 13005 st	PDF
13005n Abstract: transistor 13005N AM09214V1 STU13005N Text: STU13005N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed 3 Application 2 1 ■ Switch mode power supplies AC-DC converters IPAK Description This device is manufactured using high voltage	Original	STU13005N 13005N STU1300in transistor 13005N AM09214V1 STU13005N	PDF
Low Capacitance MOS FET 13005 Abstract: BF1205C Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1	Original	BF1205C BF1205C OT363 Low Capacitance MOS FET 13005	PDF
Low Capacitance MOS FET 13005 Abstract: GL 7815 13005 equivalent internal transistor 13005 transistor 13005 CIRCUIT 13005 13005 TRANSISTOR A1 marking code amplifier marking code 718 sot363 BF1205C Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 01 — 18 May 2004 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1	Original	BF1205C BF1205C OT363 Low Capacitance MOS FET 13005 GL 7815 13005 equivalent internal transistor 13005 transistor 13005 CIRCUIT 13005 13005 TRANSISTOR A1 marking code amplifier marking code 718 sot363	PDF
Untitled Abstract: No abstract text available Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1	Original	BF1205C BF1205C OT363	PDF
Untitled Abstract: No abstract text available Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1	Original	BF1205C BF1205C OT363	PDF
TMS7000 assembler guide Abstract: NEC78K A78000 7-0014 plc mitsubishi q series 000009AF iar 8051 examples 8085 WORD DOC a7800 GE T900 Text: 78000 ASSEMBLER, LINKER, AND LIBRARIAN Programming Guide § 0 Preface 1 11/5/98, 10:10 am COPYRIGHT NOTICE Copyright 1997 IAR Systems. All rights reserved. © Copyright 1997 NEC Electronics Europe GmbH. No part of this document may be reproduced without the prior written	Original	A78000 TMS7000 assembler guide NEC78K 7-0014 plc mitsubishi q series 000009AF iar 8051 examples 8085 WORD DOC a7800 GE T900	PDF
DS3654 Abstract: AP1684 Text: A Product Line of Diodes Incorporated AP1684 AC/DC, HIGH PF, HIGH EFFICIENCY LED DRIVER CONTROLLER Description Pin Assignments The AP1684 is a high performance AC/DC power factor corrected LED driver controller which is driving high voltage bipolar transistor.	Original	AP1684 AP1684 DS36547 DS3654	PDF
DS3654 Abstract: AP1684 Text: A Product Line of Diodes Incorporated AP1684 AC/DC, HIGH PF, HIGH EFFICIENCY LED DRIVER CONTROLLER Description Pin Assignments The AP1684 is a high performance AC/DC power factor corrected LED driver controller which is driving high voltage bipolar transistor.	Original	AP1684 AP1684 GU10/E27 DS36547 DS3654	PDF
Allen Bradley Bulletin 709 Abstract: allen-bradley 1395 VP01 Allen Bradley PLC Communication cable pin diagram allen bradley contactor bulletin 702 Allen-Bradley 1327 motor M-FK 422 Text: f l b A LLEN -BR A D LEY A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Intelligent Terminal System Programming & Operation Manual Version 1.01 Price: S25.00 Important User Information Because of the variety of uses for this equipm ent, the user of and those	OCR Scan		PDF
13005 ballast Abstract: 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications Text: Î- 1 TELEFUNKEN ELECTRONIC 17E D • fi^aODTb DGCHbaS 0 TE 13004 TE 13005 electronic Creative "fe c h n o to g « T-33MI Silicon NPN Power Transistors A p p lications; Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	T-33MI S64542 13005 ballast 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications	PDF
BR 13005 Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004 Text: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	Q02e14Sb T-33-U ooaci42b T-33-11 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004	PDF
transistor Electronic ballast 13005 Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005 Text: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times	OCR Scan	TD13004 TD13005 TD13005 TD13004 TD13005Fast transistor Electronic ballast 13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005	PDF

E13005 Abstract: LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR Text: Te m ic TE13004 • TE13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Pow er dissipation P,ot = 57 W • Glass passivation • Short sw itching tim es Applications	OCR Scan	TE13004 TE13005 VaE13004 E13005 LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR	PDF
13005 2 transistor Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT Text: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage	OCR Scan	TD13004 TD13005 TD13ig T02S1 T0252 13005 2 transistor D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT	PDF
Untitled Abstract: No abstract text available Text: Z8031 Z8000 Z-ÄSCC Asynchronous Serial Communications Controller Product Specification Zilog April 1985 Features • Two independent, 0 to 1M bit/second, fullduplex channels, each with a separate crystal oscillator and baud rate generator. ■ Programmable for NRZ, NAZI, or FM data	OCR Scan	Z8031 Z8000® 40-pin 44-pin Z8031A	PDF
SD-130055-016 Abstract: No abstract text available Text: 12 13 10 DRAIN WIRE LOCATION KE T .00 14-UN-2A 1.96 .91 23.11 .208 ±.005 REF - REF A 1.020 ±.005 P A N E L CUT OUT 1.29 P A N E L THK: .125 MAX. W /G A S K E T HEX 3 Z 7 7 REF .187 MAX. W /O UT G A S K E T .33 8.3' ;REF .062 MIN. NOTES: 1 N A T E R IA L: SEE T A B L E	OCR Scan	14-UN-2A SD-130055-016 SD-130055-016	PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data	PDF
IRF 850 Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810 Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400	OCR Scan		PDF
MOTOROLA 13003 Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER	OCR Scan	MRW3000 TRW3000 MOTOROLA 13003 F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL	PDF
transistor 13005D Abstract: LO 13005D TRANSISTOR 13005D D13005d BR 13005d 13005D TRANSISTOR LO 13005D TR 13005D w 13005d 13004D Text: Te m ic TD13004D • TD13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in te g ra te d C -E -fre e -w h e e l d io d e V ery low sw itch in g losses • H IG H S P E E D te c h n o lo g y V ery low d y n a m ic satu ratio n	OCR Scan	TD13004D TD13005D 13005D transistor 13005D LO 13005D TRANSISTOR 13005D D13005d BR 13005d 13005D TRANSISTOR LO 13005D TR 13005D w 13005d 13004D	PDF
diode D45C Abstract: JE 800 transistor L146 IC BD800 Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 fFE M in /M a x @ lc \|XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8 8* 0.5*	OCR Scan	340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800	PDF

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BR 13005 Search Results

BR 13005 Result Highlights (5)

BR 13005 Datasheets Context Search

13005 TRANSISTOR

transistor 13005

13005n

Low Capacitance MOS FET 13005

Low Capacitance MOS FET 13005

Untitled

Untitled

TMS7000 assembler guide

DS3654

DS3654

Allen Bradley Bulletin 709

13005 ballast

BR 13005

transistor Electronic ballast 13005

E13005

13005 2 transistor

Untitled

SD-130055-016

IRFD1Z3 equivalent

e13009

IRF 850

MOTOROLA 13003

transistor 13005D

diode D45C