PC21002
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.4, Jun. 2005 HYS72D64301[G/H]BR–[5/6]–B H YS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR– HYS72D128xxx[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR– HYS72D256320[G/H]BR–[5/6/7]–B [5/6/7]–B
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HYS72D64301
YS72D64301
HYS72D128xxx
HYS72D256220
HYS72D256320
09032003-IKQ3-1F2R
PC21002
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HYS72D128300
Abstract: DDR400 PC3200R-30331-C0 pc2100r 25330 z
Text: Data Sheet, Rev. 1.2, Dec. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–
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HYS72D128300
HYS72D128321
HYS72D256220
HYS72D256320GBR
184-Pin
DDR400
PC3200R-30331-C0
pc2100r 25330 z
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PC3200R-30331-C0
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.1, Sep. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–
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HYS72D128300
YS72D128300
HYS72D128321
HYS72D256220
HYS72D256320GBR
184-Pin
PC3200R-30331-C0
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pc2100r 25330 z
Abstract: cmos 4070 pc2700r-25330-c0 32 h 380 a 63 DDR400 DDR400B HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320
Text: March 2007 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Internet Data Sheet Rev. 1.32 Internet Data Sheet
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HYS72D32300
HYS72D64300
HYS72D64320
HYS72D128320
184-Pin
HYS72D
pc2100r 25330 z
cmos 4070
pc2700r-25330-c0
32 h 380 a 63
DDR400
DDR400B
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pc2700r-25330-c0
Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C
Text: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p
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HYS72D32300
HYS72D64300
HYS72D64320
HYS72D128320
184-Pin
pc2700r-25330-c0
DDR400
HYS72D64300GBR-6-C
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p
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HYS72D32300
HYS72D64300
HYS72D64320
HYS72D128320
184-Pin
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TS16949
Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
D-81541
TS16949
ZXTN23015CFH
ZXTP23015CFH
ZXTP23015CFHTA
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Untitled
Abstract: No abstract text available
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
D-81541
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723 SOT-23
Abstract: mp sot 23 sot 89 weight
Text: MC C TM Micro Commercial Components Micro Commercial Components Corp. Component Weight Information Package Type Approx. Weight g Package Type Approx. Weight(g) A-405 0.240 PB-3 2.500 BR-6 5.000 PB-6 4.000 BR-8D 3.059 SOD-123FL 0.018 D2-PACK 1.700 PRESSFIT
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DO-15
DO-201AD
DO-201AE
DO-35
DO-41
DO-41G
ITO-220
MB-35
MP-50
723 SOT-23
mp sot 23
sot 89 weight
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PC3200R-30331-C0
Abstract: HYS72D128300GBR-5-B HYS72D256220GBR-5-B PC2700R-25330-D0 HYS72D128300HBR-6-B pc2100r 25330 z DDR400 DDR400B HYS72D64301 pc2700r-25330-c0
Text: January 2007 HYS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256320[G/H]BR–[5/6/7]–B 1 8 4 - P i n R e g i s t e r e d D o u bl e - D a t a - R a t e S D R A M M o d u l e DDR SDRAM RoHS Compliant Products
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HYS72D64301
HYS72D128xxx
HYS72D256220
HYS72D256320
HYS72D
PC3200R-30331-C0
HYS72D128300GBR-5-B
HYS72D256220GBR-5-B
PC2700R-25330-D0
HYS72D128300HBR-6-B
pc2100r 25330 z
DDR400
DDR400B
pc2700r-25330-c0
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1N6102A
Abstract: 1N6103A 1N6104A 1N6105A 1N6106A 1N6107A 1N6108A 1N6109A 1N6137A 1N6121A
Text: 1N6102A thru 1N6137A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 287, REV - TRANSIENT VOLTAGE SUPPRESSER DIODES AXIAL LEAD and MELF TRANSIENT VOLTAGE SUPPRESSORS, 500W SERIES SERIES TYPE BREAKDOWN VOLTAGE I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE
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1N6102A
1N6137A
1N6103A
1N6104A
1N6105A
1N6106A
1N6107A
1N6108A
1N6109A
1N6137A
1N6121A
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Untitled
Abstract: No abstract text available
Text: 1768-1230 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)40 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq30M
req30M
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Untitled
Abstract: No abstract text available
Text: 1763-1230 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)40 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq30M
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Untitled
Abstract: No abstract text available
Text: 1743-1230 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)40 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq30M
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Untitled
Abstract: No abstract text available
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * T-1 3/4 type package. * Long life-solid state reliability. * Low power consumption. * Pb Free and RoHS compliant * Halogen free product Cl < 900 ppm, Br < 900 ppm, and Cl + Br < 1500 ppm .
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LTL30ESCBKJ-HF
BNS-OD-C131/A
MIL-STD-750D
MIL-STD-883G
MIL-STD-202G
J-STD-002
ED-4701:
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Untitled
Abstract: No abstract text available
Text: SA5.0 - SA170A TRANSIENT VOLTAGE SUPPRESSOR V BR : 6.8 - 200 Volts P PK : 500 Watts DO - 41 FEATURES : * * * * 500W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less then 1.0 ps from 0 volt to V BR min.
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SA170A
DO-41
UL94V-O
MIL-STD-202,
10X1000
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diode MARKING CODE 18A
Abstract: AN-994 EIA-541 IRFR120 IRFU120
Text: IRFR/U3410PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
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IRFR/U3410PbF
AN-994.
diode MARKING CODE 18A
AN-994
EIA-541
IRFR120
IRFU120
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max1786
Abstract: No abstract text available
Text: January 2009 HYS72D 64301E B R– [ 5 / 6 ] – D HYS72D 128300 E BR– [ 5 / 6 ] – D HYS72D 128321 E BR– [ 5 / 6 ] – D HYS72D 256320 E BR– [ 5 / 6 ] – D 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM
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HYS72D
64301E
HYS72D64301EBR
HYS72D128300EBR
HYS72D128321EBR
HYS72D256320EBR
max1786
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Untitled
Abstract: No abstract text available
Text: March 2008 HYS72D 64301E B R– [ 5 / 6 ] – D HYS72D 128300 E BR– [ 5 / 6 ] – D HYS72D 128321 E BR– [ 5 / 6 ] – D HYS72D 256320 E BR– [ 5 / 6 ] – D 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM RoHS Compliant
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HYS72D
64301E
HYS72D64301EBR
HYS72D128300EBR
HYS72D128321EBR
HYS72D256320EBR
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Untitled
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Chip Capacitors DSCC Approved 03028 BR/BX Dielectrics Overview outlined by DSCC. KEMET is approved to DSCC (Defense Supply Center, Columbus) drawing no. 03028 for EIA 0603 case size SMD MLCCs in BR and BX dielectrics. DSCC drawing no. 03028 was developed in response to the
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MIL-PRF-55681.
MILPRF-55681.
F4004
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppressors sa series 500 Watt Peak Power Rating/DO-15 TYPE Vwm NUMBER It V br @ It MAX MAX b@ vc @ Ipp a v br TYPE V WM NUMBER MAX MAX Id @ VwM vc @ mADC |jA DC h V BR @ IT Ipp a v br V A mV/°C Ipp V WM Ipp mADC pA DC V A mV/°C See Notes
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OCR Scan
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Rating/DO-15
SA10A
SA11A
SA12A
SA13A
SA14A
SA15A
SA16A
SA17A
SA18A
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1c6105a
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR TVS 2000 CATALOG 500 Watt Transient Voltage Suppressor Bi-directional Chip 6.8 to 200Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) 3-14 500W Min. V dc mA dc 1C6102 1C6102A 1C6103 1C6103A 1C6104 1C6104A 1C6105
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OCR Scan
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200Volts)
1C6102
1C6102A
1C6103
1C6103A
1C6104
1C6104A
1C6105
1C6105A
1C6106
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tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Text: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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OCR Scan
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BCW29
BCW30
BCW61A
BCW61B
BCW61C
BCW61D
BCW68F
BCW68G
BCW69
BCW70
tp4093
TMPT5401
mA 723
TMPT2907
TP4221
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44e 938
Abstract: 2602B PBV 0,01 U2602 u2602br 7644E ms4u A 2602 16 pin A 2602 8 pin U2602B
Text: 44E D • 4S > Ö^EOO^b 0010413 1 ■ A L G G U 2602 BR * U 2602 BR-FP ZERO VOLTAGE SWITCH Temperature Control and or Safety Switch-off in Irons Technology: Bipolar TELEFUNKEN ELECTRONIC Features: • Voltage monitoring • Full wave logic/automatic pulse phase
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OCR Scan
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001QM24
2602BR-FP
T-65-09
15l8x
U2602BR
44e 938
2602B
PBV 0,01
U2602
u2602br
7644E
ms4u
A 2602 16 pin
A 2602 8 pin
U2602B
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