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    BPY62 Price and Stock

    ams OSRAM Group BPY-62

    SENSOR PHOTO 830NM TOP TO206AA
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    DigiKey BPY-62 Bulk 3,286 1
    • 1 $2.63
    • 10 $1.758
    • 100 $2.63
    • 1000 $1.22124
    • 10000 $1.22124
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    ams OSRAM Group BPY-62-3-4

    SENSOR PHOTO 830NM TOP TO206AA
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    DigiKey BPY-62-3-4 Bulk 1,375 1
    • 1 $3.38
    • 10 $2.27
    • 100 $3.38
    • 1000 $1.40411
    • 10000 $1.28762
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    ams OSRAM Group BPY-62-4

    SENSOR PHOTO 830NM TOP TO206AA
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    DigiKey BPY-62-4 Bulk 526 1
    • 1 $3.66
    • 10 $2.469
    • 100 $3.66
    • 1000 $1.5447
    • 10000 $1.42025
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    ams OSRAM Group BPY 62

    Phototransistor Chip Silicon 830nm 3-Pin TO-18 - Bulk (Alt: Q60215Y0062)
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    Avnet Americas BPY 62 Bulk 10 Weeks 2,000
    • 1 -
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    • 10000 $1.1536
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    Mouser Electronics BPY 62 1,415
    • 1 $2.53
    • 10 $1.71
    • 100 $1.29
    • 1000 $1.22
    • 10000 $1.22
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    Newark BPY 62 Bulk 3 1
    • 1 $0.402
    • 10 $0.402
    • 100 $0.402
    • 1000 $0.402
    • 10000 $0.402
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    ams OSRAM Group BPY62-3/4

    Phototransistor Chip Silicon 830nm 3-Pin TO-18 - Bulk (Alt: Q62702P5198)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BPY62-3/4 Bulk 18 Weeks 2,000
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    • 100 -
    • 1000 -
    • 10000 $1.16462
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    EBV Elektronik BPY62-3/4 11 Weeks 1,000
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    BPY62 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPY62 Infineon Technologies Silicon NPN Phototransistor Original PDF
    BPY 62 OSRAM Opto Semiconductors Sensors, Transducers - Optical Sensors - Phototransistors - PHOTOTRANSISTOR TO-18 Original PDF
    BPY62 Siemens Silicon NPN Phototransistor Original PDF
    BPY62 Siemens NPN-Silizium-Fototransistor Silicon NPN Phototransistor Original PDF
    BPY62 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BPY62 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPY62 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    BPY62 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPY62-1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPY62-2 Siemens NPN-Silizium-Fototransistor Silicon NPN Phototransistor Original PDF
    BPY62-2 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPY62-3 OSRAM Silicon NPN Phototransistor Original PDF
    BPY62-3 Siemens NPN-Silizium-Fototransistor Silicon NPN Phototransistor Original PDF
    BPY62-3 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPY62-3--4 Infineon Technologies Silicon NPN Phototransistor Original PDF
    BPY62-3/4 OSRAM Phototransistor Module, 0.000000005 Dark Current, TO-18 Original PDF
    BPY62-3/4 OSRAM Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANSISTOR NPN 830NM TO-18 Original PDF
    BPY 62-3/4 OSRAM Opto Semiconductors Sensors, Transducers - Optical Sensors - Phototransistors - PHOTOTRANSISTOR NPN 830NM TO-18 Original PDF
    BPY62-4 OSRAM Silicon NPN Phototransistor Original PDF
    BPY62-4 OSRAM Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANSISTOR NPN NM TO-18 Original PDF

    BPY62 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    VARTA 20DK

    Abstract: BPX81 circuit infrared phototransistor for tv BPY62 VARTA 60 dk 20DK BPY62 application VARTA 3.6 v 70 ma Phototransistors Sunny Oscillators
    Text: General Photoelectric Applications Circuits Appnote 36 1. Suppression of DC Component in Photocurrent of Phototransistors Due to the by-passing of the base-emitter junction of T2 by capacitor C1, this control mechanism is ineffective during rapid changes. The cut-off frequency above, at which the control


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    npn phototransistor package

    Abstract: glass lens phototransistor
    Text: BPY62 SIEMENS SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm .570(14.51 I . .810(5.35) 1 .1 9 8 (5 .05 ) .4 9 2 ( 12 .5 ) 0.1»,— i (2 5 4 )1- T *0 mf \ (0.46) V * .216(5.5) .210(5.35) Chip Location Maximum Ratings FEATURES • • •


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    BPY62 npn phototransistor package glass lens phototransistor PDF

    BPY62

    Abstract: Phototransistor to-18 glass lens phototransistor
    Text: SIEMENS AKTIENGESEL LSCH AF 47E D flS3SbGS 002750b S « S I E Û SIEM ENS BPY62 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm m 018 I0 45) — ,6 a 217 (5 5) 211 (5 35) 0 1 (2 54) 187 \ (4 75) Max \ \ Radiant Sensitive Area Maximum Ratings Operating and Storage Temperature (T ^ , T^ .


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    002750b BPY62 Phototransistor to-18 glass lens phototransistor PDF

    Diode ev

    Abstract: glass lens phototransistor
    Text: SIEMENS CMPNTS t OPTO H4E D • flS3b32b QQDS227 3 * S I E X S IE M E N S BPY62 SERIES PHOTOTRANSISTOR T-41-61 Package Dimensions in Inches mm .110 -~ 4 .s u - .018 (0.45) 217 (5.5) .211 (5 35) .110 (2 .8 ) .106 (2.7) L |0 1 (2 54) n 571 (14 5) ' .492 (12 5)


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    flS3b32b QQDS227 BPY62 T-41-61 A23b32b GGQS22Ô Diode ev glass lens phototransistor PDF

    Q62702-P1641

    Abstract: No abstract text available
    Text: Si-Fotodetektoren im hermetisch dichten Metallgehäuse Type R adiant /peg *—950 sensitive nm, Ee= 0 .5 m W /cm 2, ( / c =1 mA, V tt= 5 V ) RL=5011) area BPY62 ^C E O Ui ^•10% mA V nm 0 12 0.5 .2 .5 50 4 2 0 . 1130 - Q60215-Y62 5 Q 60215-Y 1111 0 8 . 1.6


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    Q60215-Y62 60215-Y 62702-P Q62702-P16 Q62702-P16-S2 Q62702-P16-S3 Q62702-P16-S4 Q62702-P16-S5 Q62702-P1641 PDF

    BPY62

    Abstract: No abstract text available
    Text: BPY62 Silicon NPN Phototransistor Characteristics TA=25°C, X=950 nm Parameter APPLICATIO NS • Photointerrupters • Industrial electronics • For control and drive circuits DESCRIPTIO N Unit ^Smax 850 nm Spectral Sensitivity Range X 420 to 1130 Radiant Sensitive Area


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    BPY62 1000lx, BPY62 PDF

    SFH317-2

    Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
    Text: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2


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    SFH320-2 SFH320-3 SFH320F-2 SFH320F-3 BP103B-2 BP103B-3 BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH317-2 SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a PDF

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


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    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06 PDF

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A PDF

    TIL81

    Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
    Text: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29


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    ZM100 ZM100/110, BPX25/29) ZM110 BPX25 MRD310. ZM110 MRD370 ZM100 TIL81 Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti PDF

    8PX43

    Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
    Text: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.


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    SFH420 SFH421 BP104 BP103. SFH205, BP104, BP103B. LD271 LD271L LD274-1 8PX43 SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275 PDF

    TIL78

    Abstract: photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12


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    fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378 PDF

    TIL78

    Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222 PDF

    TIL78

    Abstract: photo transistor til78 TIL78 em
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 PDF

    BPY62

    Abstract: Siemens photodiode SIEMENS Phototransistors BPY
    Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Chip position 2.7 BPY 62 Radiant sensitive area \ 00.45 .1I v _ . . 12.5 5.1 4.8 _—6.2 k 5.4 Approx. weight 1.0 g M aße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified


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    0HF01SB8 BPY62 Siemens photodiode SIEMENS Phototransistors BPY PDF

    IR TIL81

    Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
    Text: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and


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    BPW41D BPW41D FPT220 FPT230 FPT320 FPT330 FPT400 FPT500 FPT530 FPT560 IR TIL81 TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor PDF

    Phototransistor TIL81

    Abstract: TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent
    Text: COMPETITOR CROSS REFERENCE LIST The following cross-reference list has been compiled as a guide for design engineers and purchasing agents and indicates the nearest Ferranti equivalent to a variety of competitive manufacturer's devices. In some cases there will be minor differences in electrical characteristics and/or package details and


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    MRD310. ZM110 MRD370 ZM100 MRD810. MRD3050 BPX29 MRD3051 Phototransistor TIL81 TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent PDF

    lg 6154

    Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
    Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp


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    Q60215-Y62 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 lg 6154 KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64 PDF

    D1302

    Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    SFH 255 FA

    Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
    Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite


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    068000-A5018 Q68000-A5017 Q68000-A5707 Q62703-N26 Q62703-N51 Q62703-N52 Q68000-A7302 Q68000-A7303 Q68000-A7304 Q68000-A8086 SFH 255 FA LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452 PDF