6pin vhz
Abstract: smd 6PIN "vhz"
Text: SIEMENS BPY12 Silicon PIN Photodiode FEATURES • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 25 ns Dimensions in inches (mm) .204(5.2)1 .197 (5.0)1 t .204(5.2) .197(5.0) APPLICATIONS • Industrial electronics
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18-pln
fl535t
6pin vhz
smd 6PIN "vhz"
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180S100
Abstract: No abstract text available
Text: SIEMENS FEA T U R ES • Especially suitable for applications from 400 nm to 1100 run • Sh ort sw itching time typ. 25 ns A P P LIC A T IO N S • Industrial electronics • For control and drive circuits BPY12 Silicon PIN Photodiode Dimensions in inches (mm)
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BPY12
4X1CT14
180S100
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y12h
Abstract: BPY12
Text: BPY12 BPY12H1 SIEMENS SILICON PIN PHOTODIODE * Package: Silicon Chip with Tw o Leads * High Reliability * No Testable Degradation * Low Noise * High Packing Density * High Open-Circuit Voltage as Photo voltaic Cells * Short Switching Time * High Spectral Sensitivity
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BPY12
BPY12H
y12h
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p1029
Abstract: SIEMENS BPY12h1 applications
Text: SIEMENS D io d e and s o ld e r p a d s A c tiv e B P Y 12 BPY 12 H 1 tsoQ6016 Silizium-PIN-Fotodiode Silicon-PIN-Photodiode la c q u e re d a re a L cs o I i n uS 5 .2 55 5 .0 50 Anode S tr a n d s ’ M a x. s o ld e r a re a s and back A p p ro x . on
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feo06697
BPY12
BPY12H1
p1029
SIEMENS BPY12h1 applications
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SFH100
Abstract: germanium photodiode PIN fotodioden BPY12 SFH231 fotodiode Q62702-P1052 400nm photodiode germanium BPW 61
Text: Si-Fotodetektoren Silicon Photodetectors 7. Fotodioden für spezielle Wellenlängen Package Type <6 Radiant sensitive 7. Photodiodes for Special Wavelengths s, ^•Smax W e10V 7.1 mm2 A/W nA UV-empfindliche Fotodiode SFH291 7.2 ±55 2.73x2.73 0.3 (£ 1 )/5 V
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SFH291
Q62702-P1038
BPX60
400nm)
Q62702-P54
ns/50
Q62702-P945
SFH100
25niWicm)
BPX61
SFH100
germanium photodiode PIN
fotodioden
BPY12
SFH231
fotodiode
Q62702-P1052
400nm
photodiode germanium
BPW 61
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SFH2030F
Abstract: SFH505A KOM2033A SFH2030 ha1900 SFH-2030F SFH200 SFH203
Text: Photodiodes Part Number Package Outline SFH205 SFH206 Package Type Plastic. daylight filter, solder tabs Plastic. dayligh t filter. solder tabs Dark Cur rent Half Angl« VB» 1 0V nA Photo sensitivity JUB50 mn 0.5mW/ cm2 nA Radiant Senat ive Area mm* Peak
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JUB50
SFH205
SFH206
SFH206K
SFH205Q2
SFH2030F
SFH505A
KOM2033A
SFH2030
ha1900
SFH-2030F
SFH200
SFH203
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lg 6154
Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp
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Q60215-Y62
O60215-Y63-S1
Q60215-Y65
Q60215-Y66
Q60215-Y67
Q60215-Y111-S4
Q60215-Y111-S5
Q60215-Y1111
Q60215-Y1112
Q60215-Y1113
lg 6154
KTY 10-8
DL1416
KTY 20-5
DL440
O62902-B156-F222
Q62901-B64
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SFH 255 FA
Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite
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068000-A5018
Q68000-A5017
Q68000-A5707
Q62703-N26
Q62703-N51
Q62703-N52
Q68000-A7302
Q68000-A7303
Q68000-A7304
Q68000-A8086
SFH 255 FA
LR 2703
LY3360K
dl340m
FP310L100-75
Q68000-A8452
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BPX48
Abstract: SFH291 SFH100 fh205 BPW-21 SFH 314 fotodioden SFH317 bpx90 SFH2030
Text: Si-Fotodetektoren Silicon Photodetectors Typenübersicht Summary of Types 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors S ' y •- S BP 103 SFH 302 S F H 50 6 BPX81 BPX 83 SFH 305 V BP X 90/F BPX 38 BP 103 B/BF SFH 313/FA
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313/FA
314/FA
BPY62
BPX81
310/FA
303/F
317/F
213/FA
214/FA
BPX48/F
BPX48
SFH291
SFH100
fh205
BPW-21
SFH 314
fotodioden
SFH317
bpx90
SFH2030
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SFH 910
Abstract: BPX61 Q62902-B166 SFH 910 235 SFH463 sfh 309 fr SFH405-2 l71ii IM 317 ld271a
Text: IR-Lumineszenzdioden Infrared Emitters 7. Infrarot Indikatorkarte 7. Infrared Indicator Card B e i B e s tr a h lu n g le u c h t e t d ie a k tiv e F lä c h e o r a n g e a u f, w o d u r c h IR - S tra h W h e n th e a c tiv e a r e a is e x p o s e d to r a d ia tio n it e m its o r a n g e lig h t, th u s
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Q62901-B79
Q62902-B166
310/FA
SFH 910
BPX61
Q62902-B166
SFH 910 235
SFH463
sfh 309 fr
SFH405-2
l71ii
IM 317
ld271a
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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p945
Abstract: bpw 81 t fotodiode p1038 SFH100 photodiode 1100 nm fotodioden
Text: Si-Fotodetektoren Silicon Photodetectors 7. Fotodioden für spezielle Wellenlängen Package Type <P deg. 7. Photodiodes for Special Wavelengths R adiant sensitive area mm2 /r nA A/W 7.1 UV-em pfindliche Fotodiode SFH 291 f rei U t O rdering code Fig. Q 62702-P1038
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62702-P1038
BPX60
Q62702-P54
BPX61
62705-P25
BPY12
Q62702-P9
62702-P
p945
bpw 81 t
fotodiode
p1038
SFH100
photodiode 1100 nm
fotodioden
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