bpx38 application
Abstract: BPX38-5 BPX38 BPX38-4
Text: BPX38 Silicon NPN Phototransistor Description BPX38 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a flat glass window. A superior linearity of photocurrent vs. irradiation makes it ideal for linear applications. A base terminal is available to enable biasing and sensitivity control.
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BPX38
BPX38
D-74025
15-Jul-96
bpx38 application
BPX38-5
BPX38-4
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bpx38 application
Abstract: BPX38 950nm
Text: BPX 38 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPX38 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a flat glass window. A superior linearity of photocurrent vs.
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BPX38
D-74025
bpx38 application
950nm
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bpx38 application
Abstract: bpx38-4 BPX38 BPX43
Text: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
18-Jul-08
bpx38 application
bpx38-4
BPX38
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BPX38
Abstract: BPX43 bpx38 application
Text: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
BPX38
bpx38 application
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Untitled
Abstract: No abstract text available
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
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bpx38 application
Abstract: BPX38 BPX43
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
bpx38 application
BPX38
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bpx38
Abstract: No abstract text available
Text: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
08-Apr-05
bpx38
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bpx38 application
Abstract: BPX38 BPX43 BPX38-5
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
bpx38 application
BPX38
BPX38-5
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JFET TRANSISTOR REPLACEMENT GUIDE j201
Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone
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U3750BM
U3760MB-FN
U3760MB-SD
SSO-44
SD-40
U3800BM
U3810BM
U4030B
U4030B
JFET TRANSISTOR REPLACEMENT GUIDE j201
UA6538
DC motor speed control using 555 and ir sensor
U2740B-FP
UAA145
CQY80
U2840B
tcrt9050
TCDF1910
sod80 smd zener diode color band
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Untitled
Abstract: No abstract text available
Text: SIEMENS BPX38 Silicon NPN Phototransistor Characteristics TA=25°C Parameter Sym Wavelength, Max. Sensitivity \sm x 880 FEATUR ES • Expecialty suitable for application* from 450 ran to 1120 nm • High linearity • Hermetically sealed metal package TO-18 ,
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BPX38
lpCE4pCE25â
lcE0flcE025-
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BPX38-4
Abstract: s543 A950 O
Text: Tem ic BPX38 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B PX 38 is a high sensitive silicon N PN epitaxial planar phototransistor in a standard T O - 18 herm etically sealed m etal case w ith a flat glass window. A superior linearity o f photocurrent vs. irradiation m akes
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BPX38
15-Jul-96
BPX38-4
s543
A950 O
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 38 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1120 nm
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PCE25Â
0HF01558
0HF01559
BPX38
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cs5050
Abstract: BPX 38 bpx38
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Chi p p o s it io n Radiant <2 -7 > s e n s it iv e BPX 38 a re a / E C B fmo06018 iS*-' Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche M erkmale
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BPX38
cs5050
BPX 38
bpx38
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SFH216
Abstract: No abstract text available
Text: SIEMENS SFH480 SFH481 SFH482 GaAIAs Infrared Emitter FEATURES • Half Angle - SFH 480,±6° - SFH481,±15° - SFH 482, ±30° • GaAIAs IR emitter, made In a liquid phase epitaxy process t .-. i - \ • Anode electricaHy connected to case • High reliability
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SFH480
SFH481
SFH482
SFH481,
SFH216
BPX43,
BPX38,
BPX65
To-18
10CPC
SFH216
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lem 732 733
Abstract: SFH 4813
Text: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SRM 90 .291 (7.4) .259 {6.6) .571 m .s \ .208(5.31 .402(12.5) .197(5) .189 (4.8) .181 (4.6) (2541 0.0 1 8 {0.45} .106 (2.7) Chfc Location .220(5.6) J208 (SJ3) N Cathode
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SFH480
SFH481
SFH482
8FH491
SFH480,
SFH481,
SFH482,
SFH480M8f:
SFH482:
SFH480:
lem 732 733
SFH 4813
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SFH 209
Abstract: LM 4812 SFH402 IFT00 BPX66
Text: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 .291 (7.4) .259 (6.6) .571 (14.5) .492(12.5) .209 (5.3) 197 (5.0) Anode W- 0.100 (254) 0 .1 8 9 (4.8) 0.181 (4 6) .018 (0.45) 106 (2 7 ) Glass Lens Chip Location
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SFH480
SFH481
SFH482
SFH480
SFH481
SFH480,
SFH481,
SFH482,
SFH480/481:
SFH482:
SFH 209
LM 4812
SFH402
IFT00
BPX66
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SFH482
Abstract: BPX66 SFH480 VN 4302
Text: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 291 (7.4) 259 (6.6) ,571 (14£L .492(12.5) ,2 0 8 (5 .3 ), 197 (5.0) Anode £ 0 . 100 " (2 54)_ 0 .189(4.8) S3.1B1 (4.6) T T T 018^(0 45) .106 (2.7) Glass Lens
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SFH480
SFH481
SFH482
SFH480
SFH480,
SFH481,
SFH482,
SFH460/481:
ctarlstic-SFH460
SFH482
BPX66
VN 4302
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SFH482-1/FS2230
Abstract: No abstract text available
Text: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 291 (7 4) 259 (6 6) 571 (14 5) .4 9 2 (1 2 5) ,2 0 8 (5 .3 ) Anode 197 (5 0) A T 0 189 (4 8) 0.100 (2 54) T ~ e 0 181 (4 6) " I -.018'(0 45) 106 (2 7) G lass Lens
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SFH480
SFH481
SFH482
SFH480,
SFH481,
SFH482,
SFH480/481:
SFH482-1/FS2230
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SFH400
Abstract: No abstract text available
Text: bOE D • 6E35bOS D D H b b n Dbl « S I E G SIEMENS SIEMENS ~{3 SFH480 SFH481 SFH482 AKTIENGESELLSCHAF GaAIAs INFRARED EMITTER Package Dimensions in Inches (mm SFH480 291 (7.4) 259(66) 571 114.5) 492(12 5) ¥ 0100 (2 54) 169(4 8) 181(4 6) 208(53) 197 (5)
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6E35bOS
SFH480
SFH481
SFH482
SFH480,
SFH481,
SFH482,
SFH400
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BPW89
Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Text: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area
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820nm
BPV11
850nm
BPW89
S284P
BPW21
BPW47B
BPW98
BPW84
S213P
BPW24R 810
W47A
A953
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BPW84
Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
Text: TEL E FU NK EN E L E C T R O N I C 4ME T> m ÛTEOCnti 0D1117D 3 D1ALGG Photo Detectors Phototransistors in Clear Plastic Package Phototransistors with Filter M atched for G a A s IR ED s in Plastic Package Package Type • C h a ra c te ristic s Photo sensitive
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BPV11
BPW96A
BPW96B
BPW96C
BPW85A
BPW85B
830nm
BPW84
S288P
BPW75
BPW87
BPW28
BPW86
LT 5239 H
BPW47B
BPW41N IR
bpw77
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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TIL702
Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or
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LCC4230-D
EPN4050
TIL702
TIL701
TIL393-9
til78 phototransistor
TIL81
til312 7 segment display
TIL78
TIL393
TIL313
TIL393-6
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